A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE IEEE Solid-State Circuits Letters Pub Date : 2024-12-25 DOI:10.1109/LSSC.2024.3522785
Hing Tai Chen;Xun Liu;Ka Nang Leung
{"title":"A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor","authors":"Hing Tai Chen;Xun Liu;Ka Nang Leung","doi":"10.1109/LSSC.2024.3522785","DOIUrl":null,"url":null,"abstract":"A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from \n<inline-formula> <tex-math>$100~\\boldsymbol {\\mu }$ </tex-math></inline-formula>\n A to 50 mA within 5-ns edge time. The measured quiescent current is \n<inline-formula> <tex-math>$4~\\boldsymbol {\\mu }$ </tex-math></inline-formula>\n A. The transient figure of merit is 1.48 fs.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"25-28"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10815978/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

Abstract

A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from $100~\boldsymbol {\mu }$ A to 50 mA within 5-ns edge time. The measured quiescent current is $4~\boldsymbol {\mu }$ A. The transient figure of merit is 1.48 fs.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Solid-State Circuits Letters
IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering
CiteScore
4.30
自引率
3.70%
发文量
52
期刊最新文献
A 2.6-GS/s 8-bit Time-Interleaved ADC With Fully Dynamic Current Integrating Sampler A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor Ultrasensitive Reset-Less Integrator-Based PIN-Diode Receiver With Input Current Control A 28-nm Static-Power-Free Fully Parallel RRAM-Based TD CIM Macro With 1982 TOPS/W/Bit for Edge Applications Enhancing AI Acceleration: A Calibration-Free, PVT-Robust Analog Compute-in-Memory Macro With Activation Functions
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1