{"title":"A 1.48-fs FoM Analog Capacitorless-LDO With Cascade-Inverter-Based Pseudo-Power Transistor","authors":"Hing Tai Chen;Xun Liu;Ka Nang Leung","doi":"10.1109/LSSC.2024.3522785","DOIUrl":null,"url":null,"abstract":"A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from \n<inline-formula> <tex-math>$100~\\boldsymbol {\\mu }$ </tex-math></inline-formula>\n A to 50 mA within 5-ns edge time. The measured quiescent current is \n<inline-formula> <tex-math>$4~\\boldsymbol {\\mu }$ </tex-math></inline-formula>\n A. The transient figure of merit is 1.48 fs.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"8 ","pages":"25-28"},"PeriodicalIF":2.2000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10815978/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0
Abstract
A capacitorless analog low-dropout regulator (CL-LDO) with cascade-inverter-based pseudo-power transistor is presented in this letter. The proposed architecture supports ultralow-voltage operation, fast transient response, high current efficiency, and high loop gain with low quiescent current along the full load range. The proposed CL-LDO can be easily implemented without any external transient-enhancement circuit. The circuit is fabricated in a 65-nm LP CMOS process with an active area of 0.00782 mm2. The minimum supply voltage can be as low as 0.5 V. The minimum dropout voltage is 20 mV. Under a 1-V supply, the undershoot voltage with 100-mV dropout voltage is 87 mV and settles down within 10 ns when the load current increases from
$100~\boldsymbol {\mu }$
A to 50 mA within 5-ns edge time. The measured quiescent current is
$4~\boldsymbol {\mu }$
A. The transient figure of merit is 1.48 fs.