{"title":"GaAs PIN Diode Based 220 GHz Switch Design Using Flip Chip Technique","authors":"Xiaolin Hao;Ao Zhang;Guodong Gu;Shixiong Liang;Xubo Song;Lisen Zhang;Peng Xu;Jianjun Gao;Zhihong Feng","doi":"10.1109/TTHZ.2024.3481959","DOIUrl":null,"url":null,"abstract":"GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The \n<sc>on</small>\n-state and \n<sc>off</small>\n-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"100-106"},"PeriodicalIF":3.9000,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Terahertz Science and Technology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10720139/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
GaAs PIN diode based single-pole single-throw (SPST) and single-pole double-throw (SPDT) switches with low insertion loss have been designed and fabricated up to 220 GHz. The
on
-state and
off
-state small-signal models of GaAs PIN diodes have been developed, and the parameter extraction procedure is explained in more detail. GaAs PIN diodes have been mounted on the quartz substrate using the flip chip technique to achieve integrated subterahertz switches. The developed SPST switch has 3.2 dB insertion loss and 29 dB isolation in the frequency range of 220 to 230 GHz. The measurement of the SPDT switch reveals an isolation of >20 dB and an insertion loss of <3.3 dB in the frequency range of 213 to 225 GHz. This switch boasts the highest operating frequency reported based on GaAs PIN diodes.
期刊介绍：
IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.
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