Pub Date : 2025-01-07DOI: 10.1109/TTHZ.2024.3520370
{"title":"IEEE Microwave Theory and Techniques Society Information","authors":"","doi":"10.1109/TTHZ.2024.3520370","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3520370","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"C2-C2"},"PeriodicalIF":3.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832399","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TTHZ.2024.3520372
{"title":"IEEE Transactions on Terahertz Science and Technology Information for Authors","authors":"","doi":"10.1109/TTHZ.2024.3520372","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3520372","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"137-138"},"PeriodicalIF":3.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832407","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TTHZ.2024.3520433
{"title":"TechRxiv: Share Your Preprint Research with the World!","authors":"","doi":"10.1109/TTHZ.2024.3520433","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3520433","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"140-140"},"PeriodicalIF":3.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832421","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TTHZ.2024.3520431
{"title":"IEEE Women in Engineering","authors":"","doi":"10.1109/TTHZ.2024.3520431","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3520431","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"139-139"},"PeriodicalIF":3.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832418","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-07DOI: 10.1109/TTHZ.2024.3520374
{"title":"IEEE Transactions on Terahertz Science and Technology Publication Information","authors":"","doi":"10.1109/TTHZ.2024.3520374","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3520374","url":null,"abstract":"","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"C3-C3"},"PeriodicalIF":3.9,"publicationDate":"2025-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10832417","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-27DOI: 10.1109/TTHZ.2024.3506817
Guangru Liu;Bo Zhang;Huali Zhu;Yong Zhang
In this letter, a broadband and isolated H -plane terahertz waveguide T-junction is presented for terahertz power combination applications. Thereinto, the high isolation characteristic is realized by inserting two corrugated microstrip loads via antisymmetric probes. In addition, a simple and robust rectangular matching structure is utilized to achieve broadband impedance matching. The entire power divider is manufactured in three metal blocks to avoid high-loss H -plane splitting and to simplify load assembly. The measured results show that the average insertion loss is 1 dB, the input return loss is better than –15 dB, and the output isolation is above 13 dB over the frequency range of 270–400 GHz.
{"title":"An Isolated H-Plane Terahertz Waveguide T-Junction With Corrugated Microstrip Loads","authors":"Guangru Liu;Bo Zhang;Huali Zhu;Yong Zhang","doi":"10.1109/TTHZ.2024.3506817","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3506817","url":null,"abstract":"In this letter, a broadband and isolated \u0000<italic>H</i>\u0000-plane terahertz waveguide T-junction is presented for terahertz power combination applications. Thereinto, the high isolation characteristic is realized by inserting two corrugated microstrip loads via antisymmetric probes. In addition, a simple and robust rectangular matching structure is utilized to achieve broadband impedance matching. The entire power divider is manufactured in three metal blocks to avoid high-loss \u0000<italic>H</i>\u0000-plane splitting and to simplify load assembly. The measured results show that the average insertion loss is 1 dB, the input return loss is better than –15 dB, and the output isolation is above 13 dB over the frequency range of 270–400 GHz.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"133-136"},"PeriodicalIF":3.9,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-25DOI: 10.1109/TTHZ.2024.3505599
Simone Clochiatti;Anton Grygoriev;Robin Kress;Enes Mutlu;Alexander Possberg;Florian Vogelsang;Marcel van Delden;Nils Pohl;Nils G. Weimann
This article presents a comprehensive analysis of indium phosphide (InP) triple-barrier resonant tunneling diodes (TB-RTDs) operating as direct terahertz (THz) detectors at zero bias. Through analytical derivation, the influence of device dimensions and of current–voltage curvature on voltage responsivity and noise equivalent power (NEP) is explored, and theoretical expressions for diode sensitivity are derived. On-wafer measurements of two scaled TB-RTDs with top contact areas of 0.5 and $1 ,mu mathrm{m}^{2}$ are conducted, followed by a comparative analysis, including harmonic-balance simulation results based on a self-developed TB-RTD nonlinear model. The measurements reveal that the responsivity scales with device area, as predicted by the theory, with a peak responsivity of 2123V/W at 340 GHz for the TB-RTD, and above 1200V/W across the entire WR2 band (330–500 GHz) for the smaller $0.5 ,mu mathrm{m}^{2}$ area device. The NEP values do not exceed 3.5 and $2 ,mathrm{pW}/{sqrt{text{Hz}}}$ for the 1 and $0.5 ,mu mathrm{m}^{2}$ devices, respectively, with the lowest measured NEP being $1.15 ,mathrm{pW}/{sqrt{text{Hz}}}$ for the $0.5 ,mu mathrm{m}^{2}$ device. These sensitivity values place the TB-RTD at a level comparable with the state-of-the-art THz direct detectors operating at room temperature. The investigation offers a clear picture of the intrinsic performance of TB-RTD operating at zero bias, with a detailed overview of the on-wafer measurement setup, power characterization method, and detector figures of merit, highlighting the potential of TB-RTDs as compact, power-efficient, and ultrasensitive direct THz detectors.
{"title":"Low-Noise Resonant Tunneling Diode Terahertz Detector","authors":"Simone Clochiatti;Anton Grygoriev;Robin Kress;Enes Mutlu;Alexander Possberg;Florian Vogelsang;Marcel van Delden;Nils Pohl;Nils G. Weimann","doi":"10.1109/TTHZ.2024.3505599","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3505599","url":null,"abstract":"This article presents a comprehensive analysis of indium phosphide (InP) triple-barrier resonant tunneling diodes (TB-RTDs) operating as direct terahertz (THz) detectors at zero bias. Through analytical derivation, the influence of device dimensions and of current–voltage curvature on voltage responsivity and noise equivalent power (NEP) is explored, and theoretical expressions for diode sensitivity are derived. On-wafer measurements of two scaled TB-RTDs with top contact areas of 0.5 and \u0000<inline-formula><tex-math>$1 ,mu mathrm{m}^{2}$</tex-math></inline-formula>\u0000 are conducted, followed by a comparative analysis, including harmonic-balance simulation results based on a self-developed TB-RTD nonlinear model. The measurements reveal that the responsivity scales with device area, as predicted by the theory, with a peak responsivity of 2123V/W at 340 GHz for the TB-RTD, and above 1200V/W across the entire WR2 band (330–500 GHz) for the smaller \u0000<inline-formula><tex-math>$0.5 ,mu mathrm{m}^{2}$</tex-math></inline-formula>\u0000 area device. The NEP values do not exceed 3.5 and \u0000<inline-formula><tex-math>$2 ,mathrm{pW}/{sqrt{text{Hz}}}$</tex-math></inline-formula>\u0000 for the 1 and \u0000<inline-formula><tex-math>$0.5 ,mu mathrm{m}^{2}$</tex-math></inline-formula>\u0000 devices, respectively, with the lowest measured NEP being \u0000<inline-formula><tex-math>$1.15 ,mathrm{pW}/{sqrt{text{Hz}}}$</tex-math></inline-formula>\u0000 for the \u0000<inline-formula><tex-math>$0.5 ,mu mathrm{m}^{2}$</tex-math></inline-formula>\u0000 device. These sensitivity values place the TB-RTD at a level comparable with the state-of-the-art THz direct detectors operating at room temperature. The investigation offers a clear picture of the intrinsic performance of TB-RTD operating at zero bias, with a detailed overview of the on-wafer measurement setup, power characterization method, and detector figures of merit, highlighting the potential of TB-RTDs as compact, power-efficient, and ultrasensitive direct THz detectors.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"107-119"},"PeriodicalIF":3.9,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10766652","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-18DOI: 10.1109/TTHZ.2024.3501585
Qingchun You;Talal Skaik;Peter Young;Nathan Miller;Peter Hunyor;Peter Huggard;Yi Wang
This letter presents a high-performance corrugated horn for the subterahertz, manufactured monolithically using high-precision 3D printing technology based on microlaser sintering of stainless-steel powder. The horn features 45° inclined corrugation stubs that allow the building of the component with its axis vertical without any internal support structures. This ensures circular symmetry of the horn and high cross-polarization discrimination and circumvents radiation performance degradation, typical of tilted printing. Departing from traditional designs, the horn also incorporates a rectangular-to-circular waveguide adapter, not only enhancing compactness but also avoiding errors and losses associated with assembly. The stainless-steel antenna was plated with gold. The prototype, measuring 10.8 mm × 10.8 mm × 29.7 mm, exhibits outstanding performance with a peak gain from 18 to 22 dBi, and >36 dB cross-polar discrimination over the frequency band of 145–225 GHz. This is the first demonstration of 3D-printed corrugation structures in corrugated horns showing high performance beyond 100 GHz.
本文介绍了一种高性能的亚太赫兹波纹喇叭，采用基于不锈钢粉末微激光烧结的高精度3D打印技术进行单片制造。喇叭的特点是45°倾斜波纹存根，允许其轴线垂直的组件的建筑，没有任何内部支撑结构。这确保了喇叭的圆形对称性和高交叉偏振辨别，并避免了辐射性能下降，典型的倾斜印刷。与传统设计不同，该喇叭还集成了一个矩形到圆形的波导适配器，不仅增强了紧凑性，而且避免了与组装相关的误差和损失。不锈钢天线镀上了金。该样机尺寸为10.8 mm × 10.8 mm × 29.7 mm，在145-225 GHz频段内具有18 ~ 22 dBi的峰值增益和36 dB的交叉极化分辨力。这是第一次展示3d打印波纹结构的波纹角，显示出超过100 GHz的高性能。
{"title":"Subterahertz Monolithic Metal 3D-Printed Corrugated Horn Antenna With High Cross-Polar Discrimination","authors":"Qingchun You;Talal Skaik;Peter Young;Nathan Miller;Peter Hunyor;Peter Huggard;Yi Wang","doi":"10.1109/TTHZ.2024.3501585","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3501585","url":null,"abstract":"This letter presents a high-performance corrugated horn for the subterahertz, manufactured monolithically using high-precision 3D printing technology based on microlaser sintering of stainless-steel powder. The horn features 45° inclined corrugation stubs that allow the building of the component with its axis vertical without any internal support structures. This ensures circular symmetry of the horn and high cross-polarization discrimination and circumvents radiation performance degradation, typical of tilted printing. Departing from traditional designs, the horn also incorporates a rectangular-to-circular waveguide adapter, not only enhancing compactness but also avoiding errors and losses associated with assembly. The stainless-steel antenna was plated with gold. The prototype, measuring 10.8 mm × 10.8 mm × 29.7 mm, exhibits outstanding performance with a peak gain from 18 to 22 dBi, and >36 dB cross-polar discrimination over the frequency band of 145–225 GHz. This is the first demonstration of 3D-printed corrugation structures in corrugated horns showing high performance beyond 100 GHz.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"128-132"},"PeriodicalIF":3.9,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938238","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents a 200-GHz phased-array wireless communication system featuring local oscillator beamforming using high-temperature cofired ceramic (HTCC) technology. The system is constructed using HTCC transmit (Tx) and receive (Rx) system-in-packages (SiPs), which are mounted on printed circuit boards and connected to parabolic antennas through waveguide feeders. These SiPs heterogeneously integrate all components of the front-end channels, achieving low-loss interconnection and 3-D integration through vertical hollow waveguides within the HTCC. The Tx SiPs incorporate integrated Schottky diode mixers with MoCu waveguide filters, performing single-sideband upconversion with high image rejection. Measured Tx channel gain ranges from 17 to 40 dB over 192.5 to 212.5 GHz, with channel saturated output power from 5.2 to 9.6 dBm over 193.5 to 211.5 GHz. Furthermore, the eight-element Tx array achieves an effective isotropic radiated power of 35.9–43.3 dBm across 196–213 GHz and supports a scanning capability of ±30° in the E -plane. The phased-array Tx-Rx wireless link is demonstrated over a 30-m distance using 16-quadrature amplitude modulation (QAM) and 64-QAM waveforms, supporting maximum data rates of 32 and 24 Gbps, respectively.
{"title":"A 200-GHz Phased-Array Wireless Communication System Using HTCC System-in-Package Technology","authors":"Bo Yu;Zhigang Wang;Oupeng Li;Qiao Liu;Hua Cai;Yang Zhou;Tao Wan;Guangjian Wang;Bo Yan;Ruimin Xu;Yuehang Xu","doi":"10.1109/TTHZ.2024.3499733","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3499733","url":null,"abstract":"This article presents a 200-GHz phased-array wireless communication system featuring local oscillator beamforming using high-temperature cofired ceramic (HTCC) technology. The system is constructed using HTCC transmit (Tx) and receive (Rx) system-in-packages (SiPs), which are mounted on printed circuit boards and connected to parabolic antennas through waveguide feeders. These SiPs heterogeneously integrate all components of the front-end channels, achieving low-loss interconnection and 3-D integration through vertical hollow waveguides within the HTCC. The Tx SiPs incorporate integrated Schottky diode mixers with MoCu waveguide filters, performing single-sideband upconversion with high image rejection. Measured Tx channel gain ranges from 17 to 40 dB over 192.5 to 212.5 GHz, with channel saturated output power from 5.2 to 9.6 dBm over 193.5 to 211.5 GHz. Furthermore, the eight-element Tx array achieves an effective isotropic radiated power of 35.9–43.3 dBm across 196–213 GHz and supports a scanning capability of ±30° in the \u0000<italic>E</i>\u0000-plane. The phased-array Tx-Rx wireless link is demonstrated over a 30-m distance using 16-quadrature amplitude modulation (QAM) and 64-QAM waveforms, supporting maximum data rates of 32 and 24 Gbps, respectively.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"45-60"},"PeriodicalIF":3.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-15DOI: 10.1109/TTHZ.2024.3499739
Michael I. Bakunov;Mikhail A. Kurnikov;Alexander I. Shugurov;Sergey B. Bodrov
In this article, we propose and experimentally demonstrate an efficient Cherenkov-type terahertz emitter for optical-to-terahertz conversion of femtosecond laser pulses from an optical oscillator. The emitter consists of a tens of microns thick layer of LiNbO $_{3}$ sandwiched between two Si semicones. The semicones serve for bilateral extraction of the generated terahertz radiation from the LiNbO $_{3}$ layer and its collimation into a single parallel beam by total internal reflection at the semicones' lateral surfaces. The emitter can be operated with pump lasers of different wavelengths. Using a fiber laser (1.55- $mu$ m wavelength) as a pump, the laser pulses of 2.5-nJ energy and 90-fs duration were converted to terahertz radiation with the efficiency of $sim !3times 10^{-5}$ . Using a Ti:sapphire laser (800-nm wavelength) with the pulse energy of 7 nJ and duration of 90 fs, we achieved a conversion efficiency of $sim !5times 10^{-4}$ , which exceeds the efficiency of the conventional collinear scheme with a ZnTe crystal by two orders of magnitude. The proposed emitter can be used as a universal radiation source for terahertz time-domain spectroscopy.
{"title":"Femtosecond Oscillator-Driven Terahertz Emitter With Conical Totally Internally Reflective Radiation Extractor","authors":"Michael I. Bakunov;Mikhail A. Kurnikov;Alexander I. Shugurov;Sergey B. Bodrov","doi":"10.1109/TTHZ.2024.3499739","DOIUrl":"https://doi.org/10.1109/TTHZ.2024.3499739","url":null,"abstract":"In this article, we propose and experimentally demonstrate an efficient Cherenkov-type terahertz emitter for optical-to-terahertz conversion of femtosecond laser pulses from an optical oscillator. The emitter consists of a tens of microns thick layer of LiNbO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 sandwiched between two Si semicones. The semicones serve for bilateral extraction of the generated terahertz radiation from the LiNbO\u0000<inline-formula><tex-math>$_{3}$</tex-math></inline-formula>\u0000 layer and its collimation into a single parallel beam by total internal reflection at the semicones' lateral surfaces. The emitter can be operated with pump lasers of different wavelengths. Using a fiber laser (1.55-\u0000<inline-formula><tex-math>$mu$</tex-math></inline-formula>\u0000m wavelength) as a pump, the laser pulses of 2.5-nJ energy and 90-fs duration were converted to terahertz radiation with the efficiency of \u0000<inline-formula><tex-math>$sim !3times 10^{-5}$</tex-math></inline-formula>\u0000. Using a Ti:sapphire laser (800-nm wavelength) with the pulse energy of 7 nJ and duration of 90 fs, we achieved a conversion efficiency of \u0000<inline-formula><tex-math>$sim !5times 10^{-4}$</tex-math></inline-formula>\u0000, which exceeds the efficiency of the conventional collinear scheme with a ZnTe crystal by two orders of magnitude. The proposed emitter can be used as a universal radiation source for terahertz time-domain spectroscopy.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 1","pages":"84-90"},"PeriodicalIF":3.9,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142938259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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