K-Band Frequency Mixing Divider for Translation Loop Applications

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-11-04 DOI:10.1109/LMWT.2024.3485679
Yue-Fang Kuo;Jhih-Wei Yang;Jia-Chuan Lin
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Abstract

A K-band frequency mixing divider scheme includes a downconverter double-balanced mixer and a divide-by-3 injection-locked frequency divider implemented with a TSMC 180-nm CMOS process is proposed in this letter. The compact structure is suitable for low-phase noise translation loop frequency synthesizers. Based on an inductive degeneration topology, the proposed mixer achieves a voltage conversion gain (CG) of 9.1 dB and a noise figure of 8.7 dB at 25 GHz radio frequency (RF) frequency. The measured locking range of the proposed circuit is from 8 to 8.5 GHz when the RF input signal varies from 21.5 to 25.5 GHz. The locking phase noise of injection frequency divider (ILFD) at a 100-kHz offset frequency was -117.4 dBc/Hz, while the injection signal had a phase noise of -108.3 dBc/Hz. The whole chip size, including the on-wafer pads, is $1.2\times 0.986$ mm2.
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用于转换环路的k波段混频分频器
本文提出了一种k波段混频分频方案,该方案包括一个下变频双平衡混频器和一个采用台积电180纳米CMOS工艺实现的除以3注入锁定分频器。结构紧凑,适用于低相位噪声平移环路频率合成器。基于电感退化拓扑,该混频器在25 GHz射频(RF)频率下的电压转换增益(CG)为9.1 dB,噪声系数为8.7 dB。当射频输入信号在21.5 ~ 25.5 GHz范围内变化时,电路的锁定范围为8 ~ 8.5 GHz。注入分频器(ILFD)在100 khz偏置频率下的锁定相位噪声为-117.4 dBc/Hz,注入信号的相位噪声为-108.3 dBc/Hz。整个芯片的尺寸,包括晶圆上的衬垫,是$1.2\乘以0.986$ mm2。
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