W-Band Broadband CMOS LNA Using Partially Coupled Transformer and Large Transistor

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-11-26 DOI:10.1109/LMWT.2024.3499322
Jae-Hyeok Song;Han-Woong Choi;Jeong-Taek Lim;Choul-Young Kim
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Abstract

This letter presents a W-band broadband low-noise amplifier (LNA) that uses a transformer-based input matching network (MN) with a series inductor, which is implemented and verified using 65-nm bulk CMOS technology. The proposed transformer-based input MN not only provides a broadband input matching but simultaneously exhibits low-noise performance. The prototype LNA measures 0.09 mm2 and achieves a peak gain of 16.4 dB and an average noise figure (NF) of 4.32 dB. The measured 3-dB bandwidth (BW) is 19.4 GHz from 68.2 to 87.6 GHz and the IP1dB is −14 dBm with a power consumption of 44.5 mW. Compared to the existing W-band bulk CMOS LNAs, the implemented LNA achieves the low-noise performance and compact size.
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采用部分耦合变压器和大晶体管的w波段宽带CMOS LNA
本文介绍了一种w波段宽带低噪声放大器(LNA),该放大器使用基于变压器的输入匹配网络(MN)和串联电感器,采用65nm块体CMOS技术实现和验证。所提出的基于变压器的输入MN不仅提供宽带输入匹配,同时还具有低噪声性能。原型LNA的尺寸为0.09 mm2,峰值增益为16.4 dB,平均噪声系数(NF)为4.32 dB。测量的3db带宽(BW)在68.2 - 87.6 GHz范围内为19.4 GHz, IP1dB为- 14 dBm,功耗为44.5 mW。与现有的w波段块体CMOS LNA相比,所实现的LNA具有低噪声性能和紧凑的尺寸。
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