Performance comparison between current-mode signaling and voltage-mode signaling for multilayer graphene nanoribbon (MLGNR) interconnects

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2025-01-10 DOI:10.1007/s10825-024-02274-2
Fa Zou, Zhongliang Pan, Peng Xu
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Abstract

Graphene nanoribbon (GNR) is emerging as a superior material for nanometer-scale interconnects, offering superior performance compared with traditional copper materials. To date, most research on GNR interconnects has focused on voltage-mode signaling (VMS) scheme, with little study on current-mode signaling (CMS) scheme. In this paper, we propose an equivalent circuit model of two-wire coupled multilayer graphene nanoribbon (MLGNR) interconnects using VMS and CMS schemes. Moreover, the model takes into account influence of temperature effect, coupling capacitive and mutual inductive. Performance of victim wire in two-wire coupled MLGNR and Copper (Cu) interconnects using VMS and CMS signaling schemes is investigated by applying the decoupling approach and ABCD parameter matrix method at local, intermediate, and global levels, respectively. In addition, the performance of MLGNR and Cu interconnects employing VMS and CMS systems is thoroughly compared and examined in this research. The results reveal that interconnects adopting the CMS scheme have less output voltage swing, less crosstalk delay, greater 3-dB bandwidth, and better signal integrity, compared to interconnects applying the VMS scheme, under the same conditions. With respect to noise, we observe that the CMS scheme has lower noise amplitude, smaller noise peak, and smaller noise width, resulting in greater noise immunity. Moreover, it is manifested that crosstalk delay, noise width, and 3 dB bandwidth are all temperature-dependent. As the temperature rises, both the delay and noise width increase, while the bandwidth decreases. In addition, the results indicate that MLGNR interconnects exhibit lower crosstalk delay, narrower noise width, larger bandwidth, and smaller dynamic power consumption compared to Cu interconnects under the same conditions. Furthermore, we discuss performance optimization methods for interconnects using both VMS and CMS schemes. Also, it is discovered that there is great agreement between the results of HSPICE simulations and those produced by the ABCD parameter matrix technique.

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多层石墨烯纳米带(MLGNR)互连中电流模式和电压模式信号的性能比较
石墨烯纳米带(GNR)与传统的铜材料相比,具有优越的性能,正在成为纳米级互连的优越材料。目前,对GNR互连的研究大多集中在电压模式信令(VMS)方案上,而对电流模式信令(CMS)方案的研究较少。本文提出了一种采用VMS和CMS方案的双线耦合多层石墨烯纳米带(MLGNR)互连等效电路模型。此外,该模型还考虑了温度效应、耦合电容和互感的影响。采用解耦方法和ABCD参数矩阵方法,分别在局部、中间和全局层面研究了采用VMS和CMS信令方案的两线耦合MLGNR和Cu互连中受害线的性能。此外,本研究还对采用VMS和CMS系统的MLGNR和Cu互连的性能进行了全面的比较和检验。结果表明,在相同条件下,与采用VMS方案的互连相比,采用CMS方案的互连具有更小的输出电压摆幅、更小的串扰延迟、更大的3db带宽和更好的信号完整性。在噪声方面,我们观察到CMS方案具有更低的噪声幅值、更小的噪声峰值和更小的噪声宽度,从而具有更强的抗噪声能力。此外,串扰延迟、噪声宽度和3db带宽都与温度有关。随着温度的升高,延迟和噪声宽度都增加,而带宽减小。结果表明,在相同条件下,与铜互连相比,MLGNR互连具有更低的串扰延迟、更窄的噪声宽度、更大的带宽和更小的动态功耗。此外,我们还讨论了使用VMS和CMS方案的互连性能优化方法。同时,发现HSPICE模拟结果与ABCD参数矩阵技术的模拟结果有很大的一致性。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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