Layered LiNbO3/AT-Quartz Wideband Devices With Inherent Transverse Mode Suppression

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-11-20 DOI:10.1109/LMWT.2024.3496911
Peisen Liu;Boyuan Xiao;Sulei Fu;Huiping Xu;Qiufeng Xu;Xinchen Zhou;Rui Wang;Cheng Song;Fei Zeng;Weibiao Wang;Feng Pan
{"title":"Layered LiNbO3/AT-Quartz Wideband Devices With Inherent Transverse Mode Suppression","authors":"Peisen Liu;Boyuan Xiao;Sulei Fu;Huiping Xu;Qiufeng Xu;Xinchen Zhou;Rui Wang;Cheng Song;Fei Zeng;Weibiao Wang;Feng Pan","doi":"10.1109/LMWT.2024.3496911","DOIUrl":null,"url":null,"abstract":"This letter reports on a novel layered structure with inherent spurious transverse suppression for shear-horizontal surface acoustic wave (SH-SAW) wideband devices. The platform integrates a giant electromechanical coupling factor (\n<inline-formula> <tex-math>$k_{\\text {eff}}^{2}$ </tex-math></inline-formula>\n) lithium niobate (LN) thin film with a commercially available AT-quartz substrate characterized by strong concave shear horizontal slowness, inherently suppressing transverse modes through slowness curve manipulation. We compared the proposed LN/AT-quartz platform with prevalent LN/SiO2/Si structure through 3-D finite-element analyses and device measurements, theoretically and experimentally verifying the superior capability of AT-quartz for transverse mode suppression. Besides large \n<inline-formula> <tex-math>$k_{\\text {eff}}^{2}$ </tex-math></inline-formula>\n over 20%, maximum quality factor (\n<inline-formula> <tex-math>$Q_{\\max }$ </tex-math></inline-formula>\n) exceeding 800, and spurious-free responses up to 6 GHz achieved in fabricated LN/AT-quartz resonators, transverse modes were inherently mitigated in LN thin-film layered surface acoustic wave (SAW) devices for the first time. The fabricated synchronous gigahertz filter shows a 3-dB fractional bandwidth (FBW) of 10.5%, a minimum insertion loss (ILmin) of 0.36 dB, and flat passband with transverse modes well inherently suppressed utilizing standard interdigital transducer (IDT) layout.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 1","pages":"119-122"},"PeriodicalIF":0.0000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10758807/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This letter reports on a novel layered structure with inherent spurious transverse suppression for shear-horizontal surface acoustic wave (SH-SAW) wideband devices. The platform integrates a giant electromechanical coupling factor ( $k_{\text {eff}}^{2}$ ) lithium niobate (LN) thin film with a commercially available AT-quartz substrate characterized by strong concave shear horizontal slowness, inherently suppressing transverse modes through slowness curve manipulation. We compared the proposed LN/AT-quartz platform with prevalent LN/SiO2/Si structure through 3-D finite-element analyses and device measurements, theoretically and experimentally verifying the superior capability of AT-quartz for transverse mode suppression. Besides large $k_{\text {eff}}^{2}$ over 20%, maximum quality factor ( $Q_{\max }$ ) exceeding 800, and spurious-free responses up to 6 GHz achieved in fabricated LN/AT-quartz resonators, transverse modes were inherently mitigated in LN thin-film layered surface acoustic wave (SAW) devices for the first time. The fabricated synchronous gigahertz filter shows a 3-dB fractional bandwidth (FBW) of 10.5%, a minimum insertion loss (ILmin) of 0.36 dB, and flat passband with transverse modes well inherently suppressed utilizing standard interdigital transducer (IDT) layout.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
具有固有横模抑制的层状LiNbO3/ at -石英宽带器件
本文报道了一种用于剪切-水平表面声波(SH-SAW)宽带器件的具有固有杂散横向抑制的新型层状结构。该平台将巨大的机电耦合系数($k_{\text {eff}}^{2}$)铌酸锂(LN)薄膜与市上可用的at -石英衬底集成在一起,其特点是具有强凹剪切水平慢度,通过慢度曲线操纵固有地抑制横向模式。通过三维有限元分析和器件测量,我们将所提出的LN/ at -石英平台与流行的LN/SiO2/Si结构进行了比较,从理论上和实验上验证了at -石英在横模抑制方面的优越性能。除了在制备的LN/ at -石英谐振器中实现了超过20%的大$k_{\text {eff}}^{2}$,最大质量因子($Q_{\max}$)超过800,以及高达6 GHz的无杂散响应外,还首次在LN薄膜层状表面声波(SAW)器件中实现了固有的横向模式减轻。该同步千兆赫滤波器的3db分数带宽(FBW)为10.5%,最小插入损耗(ILmin)为0.36 dB,并且采用标准数字间换能器(IDT)布局,具有良好的固有抑制横向模式的平坦通带。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
CiteScore
6.00
自引率
0.00%
发文量
0
期刊最新文献
Table of Contents IEEE Microwave and Wireless Technology Letters publication IEEE Microwave and Wireless Technology Letters Information for Authors Table of Contents IEEE Microwave and Wireless Technology Letters publication
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1