Laterally Excited Bulk Acoustic Resonators With Grooves Between Interdigital Electrodes

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-11-25 DOI:10.1109/LMWT.2024.3495722
Zhiwei Wen;Wenjuan Liu;Xin Tong;Sijie Yang;Ronghui Wang;Yuanhang Qu;Yan Liu;Yao Cai;Shishang Guo;Chengliang Sun
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Abstract

Laterally excited bulk acoustic resonators (XBARs) with adjustable piezoelectric coupling coefficient ( $K^{2}$ ) are a hot spot in radio frequency (RF) filters for the flexible adjustment of bandwidth. In this letter, the XBARs with grooves (G-XBARs) achieve adjustable $K^{2}$ by changing the groove size. The equivalent series capacitor ( $C_{\text {r}}$ ) is introduced due to the etched grooves, and consequently, $K^{2}$ is adjusted. The designed G-XBAR is fabricated using a 300-nm Z-cut LiNbO3 on an insulator (LNOI) wafer, where the grooves in LiNbO3 thin films are formed by ion beam etching (IBE) at an etch rate of 15.7 nm/min. The measured $K^{2}$ of G-XBAR is adjusted from 7.54% to 33.69%, with a wide range of 77.6% over 6 GHz. Furthermore, the power-handling capability of G-XBAR is measured over +19 dBm. The G-XBAR demonstrated in this work exhibits a wide adjusting range, showing great potential for high-performance RF filters with tunable bandwidth in multiband applications.
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数字电极间带凹槽的横向激发体声谐振器
具有可调压电耦合系数($K^{2}$)的横向激发体声谐振器(xbar)是射频滤波器中带宽灵活调节的研究热点。在这封信中,带凹槽的XBARs (G-XBARs)通过改变凹槽尺寸实现可调节的$K^{2}$。由于蚀刻凹槽,引入了等效串联电容器($C_{\text {r}}$),因此调整了$K^{2}$。设计的G-XBAR是在绝缘体(LNOI)晶圆上使用300 nm的z形切割LiNbO3制成的,其中LiNbO3薄膜上的凹槽是通过离子束蚀刻(IBE)形成的,蚀刻速率为15.7 nm/min。G-XBAR的测量值$K^{2}$从7.54%调整到33.69%,在6 GHz范围内达到77.6%。此外,G-XBAR的功率处理能力超过+19 dBm。G-XBAR具有较宽的调节范围,在多频段应用中具有可调谐带宽的高性能RF滤波器显示出巨大的潜力。
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