Broadband Back-Short Transition From Waveguide to Thin Substrate-Integrated Waveguide in Multilayer Substrate in 270-GHz Band

IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE journal of microwaves Pub Date : 2024-11-06 DOI:10.1109/JMW.2024.3481629
Shumpei Kishi;Yoshiki Sugimoto;Kunio Sakakibara;Nobuyoshi Kikuma
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Abstract

A broadband right-angle transition from a rectangular waveguide (RWG) to a substrate-integrated waveguide (SIW) with a small narrow-wall width is proposed in the 270 GHz band. Generally, it is difficult to design a broadband transition from a standard RWG to an SIW with a small narrow-wall width owing to the small characteristic impedance of the SIW. In this study, wideband characteristics are obtained by placing via holes in a multilayer substrate and forming back-short structures, short stubs, and inductive pins. By varying the positions of the via holes, the two resonant frequencies are independently controlled to achieve a broad bandwidth exceeding 26%. To verify this design, back-to-back DUTs (devices under test) were fabricated and measured in the sub-terahertz band. The measured and simulated results are in good agreement. The measured insertion loss is approximately 1.1 dB at a design frequency of 275 GHz, and the measured reflection loss is less than −10 dB from 234 GHz to 308 GHz.
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从波导到薄衬底的宽带背短跃迁——270-GHz频段多层衬底集成波导
在 270 GHz 波段提出了一种从矩形波导(RWG)到小窄壁宽度基底集成波导(SIW)的宽带直角过渡技术。一般来说,由于 SIW 的特性阻抗较小,很难设计从标准 RWG 到小窄壁宽度 SIW 的宽带过渡。在本研究中,通过在多层基板上放置通孔并形成背短结构、短存根和电感引脚,获得了宽带特性。通过改变通孔的位置,可以独立控制两个谐振频率,从而获得超过 26% 的宽带宽。为了验证这一设计,我们制作了背靠背 DUT(被测设备),并在亚太赫兹频段进行了测量。测量结果和模拟结果非常吻合。在设计频率为 275 GHz 时,测量插入损耗约为 1.1 dB,在 234 GHz 至 308 GHz 范围内,测量反射损耗小于 -10 dB。
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CiteScore
10.70
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0.00%
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0
审稿时长
8 weeks
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2025 Index IEEE Transactions of Microwaves Arbitrary Sub-THz Pulse Shaping via a Laser-Array-Driven InP-on-Sapphire Switch Front Cover Table of Contents IEEE Journal of Microwaves Information for Authors
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