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IEEE Journal of Microwaves Table of Contents IEEE微波杂志目录
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-14 DOI: 10.1109/JMW.2025.3642482
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引用次数: 0
IEEE Journal of Microwaves Information for Authors IEEE微波信息作者杂志
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-14 DOI: 10.1109/JMW.2025.3642480
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引用次数: 0
2025 Index IEEE Transactions of Microwaves 微波学报
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-17 DOI: 10.1109/JMW.2025.3633464
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引用次数: 0
Arbitrary Sub-THz Pulse Shaping via a Laser-Array-Driven InP-on-Sapphire Switch 任意亚太赫兹脉冲整形通过激光阵列驱动的蓝宝石上inp开关
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-10 DOI: 10.1109/JMW.2025.3603119
Antonin Sojka;Karl Rieger;Nikolay Agladze;Qile Wu;Brad D. Price;Bei Shi;Seamus O'Hara;Joe Costello;Jonathan Klamkin;Marzieh Kavand;Catherine L. Nguyen;Garrett D. Cole;Thorsten Maly;Mark S. Sherwin
We present an amplitude modulator for high-power sub-terahertz radiation based on a laser-driven semiconductor switch capable of arbitrarily shaping pulse sequences with nanosecond time resolution. The core of the device is a photonic switch constructed from a 4 $mu$m-thick epitaxially grown indium phosphide film bonded to a sapphire substrate. This switch is driven by an array of eight fiber-coupled 905 nm laser diodes, each delivering up to 125 W of peak power with programmable pulse durations ranging from 40 to 250 ns. By optimizing the semiconductor layer and substrate combination, we achieve a two-orders-of-magnitude reduction in the optical excitation fluence required for modulation, a key advancement that enables the use of compact and cost-effective laser diodes rather than high-power pulsed lasers traditionally required for such devices. The modulator was experimentally validated through a 240 GHz pulsed electron spin resonance experiment. The modulator also successfully operated with nearly 1 kW of sub-THz radiation without sustaining damage. Time-resolved reflectance measurements confirmed that the temporal structure of the laser pulses is faithfully imprinted onto the reflected sub-THz signal, demonstrating the system’s capability for flexible and precise pulse shaping at high frequencies.
我们提出了一种基于激光驱动的半导体开关的高功率亚太赫兹辐射调幅器,该开关能够以纳秒级的时间分辨率任意塑造脉冲序列。该器件的核心是一个光子开关,该开关由4 $mu$m厚的外延生长的磷化铟薄膜与蓝宝石衬底结合而成。该开关由8个光纤耦合905nm激光二极管阵列驱动,每个激光二极管提供高达125 W的峰值功率,可编程脉冲持续时间范围为40至250 ns。通过优化半导体层和衬底组合,我们实现了调制所需的光激发影响降低了两个数量级,这是一个关键的进步,使使用紧凑且具有成本效益的激光二极管而不是传统上需要的高功率脉冲激光器。通过240 GHz脉冲电子自旋共振实验对该调制器进行了验证。该调制器还成功地在近1kw的次太赫兹辐射下工作,而没有持续损坏。时间分辨反射率测量证实,激光脉冲的时间结构被忠实地印在反射的次太赫兹信号上,证明了系统在高频下灵活和精确的脉冲整形能力。
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引用次数: 0
IEEE Microwave Theory and Technology Society Publication Information IEEE微波理论与技术学会出版物信息
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-06 DOI: 10.1109/JMW.2025.3620046
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引用次数: 0
IEEE Journal of Microwaves Table of Contents IEEE微波杂志目录
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-06 DOI: 10.1109/JMW.2025.3620048
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引用次数: 0
List of Reviewers for Volume 4, 2024 and Volume 5, 2025 2024年第4卷和2025年第5卷审稿人名单
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-06 DOI: 10.1109/JMW.2025.3621021
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引用次数: 0
Introduction to the November 2025 Issue 2025年11月号简介
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-06 DOI: 10.1109/JMW.2025.3622349
Peter H. Siegel
This issue we are back to our more usual mix of experimental and analytic articles with a bit of extra focus on high frequency instruments and applications. We include fourteen excellent submissions on topics ranging from THz space instruments to improved metallic building blocks for machine learning transmission line circuit optimization. Of particular interest in this issue are our two review papers – one on power conversion circuitry for energy harvesting and the other on THz heterodyne spectroscopy instruments for Earth, planetary, and astrophysics applications. We also bring you two extremely nice papers from JPL, one on a compact CubeSat 557 GHz water line spectrometer, already being flown on a high altitude balloon platform, and another that implements a first-of-its-kind 240 GHz FMCW radar for cloud sensing and water vapor interactions, but from the ground – both potential precursors to satellite platforms. There is also a group of articles on radar methods, including ISAR imaging, high power (kW level) millimeter wave switches, cryogenic modulators with wireless data transfer to room temperature, improved linearity amplifiers, a very effective millimeter-wave Bessel beam launcher, and more. As usual, we summarize our metrics for the month, and as this is our last issue for 2025, we include a list of our 2024 and 2025 reviewers in a separate section at the end of our Table of Contents as well as our 2025 Index.
这一期我们回到了我们通常的实验和分析文章的混合,并特别关注高频仪器和应用。我们包括14个优秀的提交,主题从太赫兹空间仪器到用于机器学习传输线电路优化的改进金属构建块。在这个问题上特别感兴趣的是我们的两篇综述论文-一篇是关于能量收集的功率转换电路,另一篇是关于用于地球,行星和天体物理学应用的太赫兹外差光谱仪器。我们还为您带来两篇来自JPL的非常好的论文,一篇是关于紧凑的CubeSat 557 GHz水线光谱仪,已经在高空气球平台上飞行,另一篇是实现了用于云传感和水蒸气相互作用的首款240 GHz FMCW雷达,但来自地面-两者都是卫星平台的潜在前身。还有一组关于雷达方法的文章,包括ISAR成像,高功率(kW级)毫米波开关,将无线数据传输到室温的低温调制器,改进的线性放大器,非常有效的毫米波贝塞尔波束发射器等等。像往常一样,我们总结了这个月的指标,因为这是我们2025年的最后一期,我们在目录和2025年指数的末尾单独列出了我们2024年和2025年的审稿人名单。
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引用次数: 0
IEEE Journal of Microwaves Information for Authors IEEE微波信息作者杂志
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-06 DOI: 10.1109/JMW.2025.3620050
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引用次数: 0
Temperature-Compensated Multi-Level CMOS Modulators Operating From 10 K to 300 K for Cryogenic Interconnects 温度补偿多级CMOS调制器从10 K到300 K的低温互连
IF 4.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-14 DOI: 10.1109/JMW.2025.3614209
Christopher Kniss;Abhishek Sharma;Ratanak Phon;Gregory Shimonov;Eran Socher;Pragya R. Shrestha;Karthick Ramu;Jason P. Campbell;Amin Pourvali Kakhki;Richard Al Hadi;Rod Kim
This work presents temperature-compensated cryogenic complementary metal-oxide-semiconductor (CMOS) modulators operating over a 10 K to 300 K temperature range, suitable for intra- and inter-thermal cryogenic communications. Conventional metal-based coax cables suffer from a fundamental trade-off between thermal load and frequency-dependent attenuation, where lower thermal load results in higher electromagnetic attenuation. The recent surge in cryogenic high-performance computing and quantum computing has driven the demand for scalable cryogenic interconnect solutions. New techniques in optical fibers and millimeter-wave backscatter transceivers have demonstrated the ability to transport digital data between thermally isolated temperatures without the need for coaxial cables. Our new modulator can integrate (at the package or chip level) with millimeter-wave transmitters co-located on the same thermal condition while supporting bandwidth-efficient modulations such as multi-level pulse amplitude modulations. Based on this motivation, we implemented a current-steering 2-bit modulator in a 65-nanometer (nm) bulk CMOS process. The modulator achieves a data rate of 13 gigabits per second (Gb/s) while consuming 15.4 mW under a 1.2 V supply at 10 K, resulting in an energy efficiency of 1.18 picojoules per bit (pJ/b). In addition to previously demonstrated optical fibers and millimeter-wave backscatter, we implemented a 150 GHz (GHz) transmitter utilizing the same current-steering modulator scheme in a 28-nm CMOS process. We established contactless connections between thermally isolated systems operating at 10 K and 300 K, achieving a data rate of 8 Gb/s.
这项工作提出了温度补偿的低温互补金属氧化物半导体(CMOS)调制器,工作温度范围为10 K至300 K,适用于热内和热间低温通信。传统的金属基同轴电缆在热负荷和频率相关衰减之间存在基本的权衡,其中较低的热负荷导致较高的电磁衰减。最近低温高性能计算和量子计算的激增推动了对可扩展低温互连解决方案的需求。光纤和毫米波反向散射收发器的新技术已经证明了在热隔离温度之间传输数字数据的能力,而不需要同轴电缆。我们的新调制器可以集成(在封装或芯片级)与毫米波发射器在相同的热条件下共同定位,同时支持带宽高效调制,如多级脉冲幅度调制。基于这一动机,我们在65纳米(nm)体CMOS工艺中实现了电流转向2位调制器。该调制器在1.2 V电源下,在10 K下消耗15.4 mW的同时,实现了13千兆位每秒(Gb/s)的数据速率,从而实现了1.18皮焦耳每比特(pJ/b)的能量效率。除了先前演示的光纤和毫米波后向散射外,我们还在28纳米CMOS工艺中实现了一个150 GHz (GHz)发射机,利用相同的电流转向调制器方案。我们在工作在10 K和300 K的热隔离系统之间建立了非接触式连接,实现了8 Gb/s的数据速率。
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引用次数: 0
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