Effect of Thermal Annealing on the Structural and Electrical Properties of Hafnium Oxide Films

IF 0.9 4区物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Physics of the Solid State Pub Date : 2025-01-14 DOI:10.1134/S1063783424601917

A. V. Pavlikov, I. D. Kuchumov, M. N. Martyshov, D. M. Zhigunov, A. S. Ilin, A. V. Koroleva, T. P. Savchuk

{"title":"Effect of Thermal Annealing on the Structural and Electrical Properties of Hafnium Oxide Films","authors":"A. V. Pavlikov, I. D. Kuchumov, M. N. Martyshov, D. M. Zhigunov, A. S. Ilin, A. V. Koroleva, T. P. Savchuk","doi":"10.1134/S1063783424601917","DOIUrl":null,"url":null,"abstract":"In this work, thin films of hafnium oxide HfOx obtained by electron beam deposition were crystallized by thermal annealing in air atmosphere. The relationship between the structural changes occurring as a result of annealing and the electrical properties of the films was determined. It was found that the formation of nanocrystals with a monoclinic structure in the studied films, occurring at annealing temperatures of 500°C and higher, is accompanied by a decrease in their specific conductivity by more than 6 times, which can be associated with a decrease in the number of oxygen vacancies as a result of structure ordering. It was also shown that the specific conductivity of all HfOx films (pristine and annealed at different temperatures) has a strong dependence on temperature, described by the activation law with an activation energy from 0.86 to 0.93 eV. The obtained data can be used to improve the characteristics of memristive systems and other electronic devices based on hafnium oxide layers.","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"557 - 564"},"PeriodicalIF":0.9000,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063783424601917","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

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Abstract

In this work, thin films of hafnium oxide HfO_x obtained by electron beam deposition were crystallized by thermal annealing in air atmosphere. The relationship between the structural changes occurring as a result of annealing and the electrical properties of the films was determined. It was found that the formation of nanocrystals with a monoclinic structure in the studied films, occurring at annealing temperatures of 500°C and higher, is accompanied by a decrease in their specific conductivity by more than 6 times, which can be associated with a decrease in the number of oxygen vacancies as a result of structure ordering. It was also shown that the specific conductivity of all HfO_x films (pristine and annealed at different temperatures) has a strong dependence on temperature, described by the activation law with an activation energy from 0.86 to 0.93 eV. The obtained data can be used to improve the characteristics of memristive systems and other electronic devices based on hafnium oxide layers.

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热处理对氧化铪薄膜结构和电性能的影响

本文采用电子束沉积法制备了氧化铪HfOx薄膜，并在空气气氛中进行了热退火结晶。确定了退火引起的结构变化与薄膜电性能之间的关系。研究发现，在500℃及以上的退火温度下，薄膜中形成单斜晶结构的纳米晶体，其比电导率下降了6倍以上，这可能与结构有序导致的氧空位数量减少有关。实验还表明，所有HfOx薄膜（在不同温度下原始和退火）的比电导率与温度有很强的相关性，其活化能在0.86 ~ 0.93 eV之间。所获得的数据可用于改善基于氧化铪层的记忆系统和其他电子器件的特性。

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来源期刊

Physics of the Solid State 物理-物理：凝聚态物理

CiteScore

1.70

自引率

0.00%

发文量

审稿时长

2-4 weeks

期刊介绍： Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.