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An Investigation into the Dynamic Photocatalytic Degradation of Organic Pollutants in Sunlight Exposure with ZnO Nanoparticles Synthesized Using a Green Approach 绿色合成ZnO纳米颗粒动态光催化降解日光下有机污染物的研究
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601140
S. Johnson Jeyakumar, R. Piriyadharsini, M. Jothibas

Currently, phytochemical approaches to metal oxide nanoparticles (NPs) are regarded as the most effective and environmentally benign option due to the varied roles in the formation of nanostructures. This study focused on synthesizing zinc oxide nanoparticles from Citron leaf extract. The synthesized samples were evaluated by XRD, FTIR, XPS, PL, UV-Vis, SEM with EDX, and HRTEM with EDX, respectively. As the leaf extract increases, the structure analysis shows that the ZnO NPs have the average size of the crystallites which decreases from 16.4 to 12.7 nm. The FT-IR study provides assurance about the contribution of various biomolecules to the sample surface and the formation of Zn–O bonding. SEM and HRTEM investigations revealed nanorod-shaped morphology with high particle homogeneity from the 20 mL ZnO NPs. Furthermore, surface chemical state analyses by XPS verified the accommodation of different oxygen-coordinated molecular species. The dye degradation rates of methylene orange and methylene violet organic dyes were found to be 99% and 98%, respectively. These outcomes were attained by using a bio nano-rod catalyst for 60 min under sun light irradiation. According to the findings, the photodegradation of MO dye solution by ZnO nanoparticles via an ecologically benign approach under favorable conditions was effective. Based on the present study, the application of bio-mediated ZnO NPs is suitable for aquatic environmental purification.

目前,植物化学方法被认为是最有效和最环保的选择,因为它们在纳米结构的形成中起着不同的作用。本研究以香橼叶提取物为原料合成氧化锌纳米颗粒。采用XRD、FTIR、XPS、PL、UV-Vis、SEM (EDX)和HRTEM (EDX)对合成的样品进行了表征。随着叶提取物含量的增加,ZnO纳米粒子的平均晶粒尺寸从16.4 nm减小到12.7 nm。FT-IR研究为各种生物分子对样品表面的贡献和Zn-O键的形成提供了保证。SEM和HRTEM研究表明,20 mL ZnO NPs具有高均匀性的纳米棒状形貌。此外,XPS的表面化学态分析证实了不同氧配位分子种的调节作用。亚甲基橙和亚甲基紫有机染料的染料降解率分别为99%和98%。这些结果是通过在阳光照射下使用生物纳米棒催化剂60分钟获得的。研究结果表明,在良好的环境条件下,纳米ZnO光降解MO染料溶液是有效的。基于目前的研究,生物介导的ZnO NPs适用于水生环境净化。
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引用次数: 0
Effect of Thermal Annealing on the Structural and Electrical Properties of Hafnium Oxide Films 热处理对氧化铪薄膜结构和电性能的影响
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601917
A. V. Pavlikov, I. D. Kuchumov, M. N. Martyshov, D. M. Zhigunov, A. S. Ilin, A. V. Koroleva, T. P. Savchuk

In this work, thin films of hafnium oxide HfOx obtained by electron beam deposition were crystallized by thermal annealing in air atmosphere. The relationship between the structural changes occurring as a result of annealing and the electrical properties of the films was determined. It was found that the formation of nanocrystals with a monoclinic structure in the studied films, occurring at annealing temperatures of 500°C and higher, is accompanied by a decrease in their specific conductivity by more than 6 times, which can be associated with a decrease in the number of oxygen vacancies as a result of structure ordering. It was also shown that the specific conductivity of all HfOx films (pristine and annealed at different temperatures) has a strong dependence on temperature, described by the activation law with an activation energy from 0.86 to 0.93 eV. The obtained data can be used to improve the characteristics of memristive systems and other electronic devices based on hafnium oxide layers.

本文采用电子束沉积法制备了氧化铪HfOx薄膜,并在空气气氛中进行了热退火结晶。确定了退火引起的结构变化与薄膜电性能之间的关系。研究发现,在500℃及以上的退火温度下,薄膜中形成单斜晶结构的纳米晶体,其比电导率下降了6倍以上,这可能与结构有序导致的氧空位数量减少有关。实验还表明,所有HfOx薄膜(在不同温度下原始和退火)的比电导率与温度有很强的相关性,其活化能在0.86 ~ 0.93 eV之间。所获得的数据可用于改善基于氧化铪层的记忆系统和其他电子器件的特性。
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引用次数: 0
Investigation of Sr-Doped BiFeO3 Synthesized by Sol–Gel Route 溶胶-凝胶法制备sr掺杂BiFeO3的研究
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601723
Sachin D. Rajadhyax, Sangeeta G. Dahotre, Rajib Mondal, Rosni Roy, Pranav P. Naik, Snehal Hasolkar

The Sr-doped bismuth ferrite nanoparticles with chemical formula Bi1–xSrxFeO3 (x = 0.1, 0.2, 0.3, 0.4, and 0.5) were prepared via facile sol–gel method. A detailed investigation was conducted into the effects of substituting divalent Sr2+ at the Bi3+ site on the structural, morphological, magnetic, and electrical characteristics. The XRD study revealed the occurrence of structural transformation in the samples upon doping. The reduction in crystallite size can be attributed to the creation of oxygen vacancies. The morphological analysis carried out using field emission scanning electron microscopy (FESEM) further validated this theory. The increasingly greater lattice distortion with doping is in line with the increasing value of microstrain for increasing doping concentrations. The improving stability of the structure with increasing doping concentration was confirmed by the increasing value of the tolerance (T) factor. The FESEM micrographs reveal the change in morphology of the particles upon doping. The EDS results confirm the expected presence of the constituent elements Sr, Bi, Fe, and O in permissible proportions. The M–H curve reported at 3 K and at ambient temperature both confirmed the appreciable increase in magnetization with increasing doping concentration. The investigation of the dielectric properties of the samples was performed using an LCR meter operating in the frequency range of 10 Hz–8 MHz. The results showed a marked increase in the value of the dielectric constant with an increase in doping concentration. The increasing resistivity of the doped BFO samples is confirmed by the significant values of grain resistance as indicated by the Cole-Cole plots. The good ferroelectric properties of the samples are revealed by the P–E loops and may find potential applications in spintronic devices and microwave devices. The P–E loops reveal the good ferroelectric nature of the samples and can have potential applications in spintronic devices and microwave devices.

采用溶胶-凝胶法制备了化学式为Bi1-xSrxFeO3 (x = 0.1, 0.2, 0.3, 0.4, 0.5)的掺锶铋铁氧体纳米颗粒。详细研究了在Bi3+位点上取代二价Sr2+对结构、形态、磁性和电学特性的影响。XRD研究表明,掺杂后样品发生了结构转变。晶体尺寸的减小可归因于氧空位的产生。利用场发射扫描电镜(FESEM)进行的形态分析进一步验证了这一理论。随着掺杂的增加,晶格畸变越来越大,这与微应变随掺杂浓度的增加而增加是一致的。容差(T)因子的增大证实了结构的稳定性随掺杂浓度的增加而提高。FESEM显微照片揭示了掺杂后颗粒形貌的变化。能谱分析结果证实了预期的组成元素Sr、Bi、Fe和O在允许比例下的存在。在3k和室温下的M-H曲线都证实了磁化强度随掺杂浓度的增加而明显增加。使用LCR计在10 Hz-8 MHz频率范围内工作,对样品的介电特性进行了研究。结果表明,随着掺杂浓度的增加,介电常数的值显著增加。在Cole-Cole图中,晶粒电阻的显著值证实了掺杂BFO样品的电阻率增加。P-E环揭示了样品良好的铁电性能,在自旋电子器件和微波器件中有潜在的应用前景。P-E环显示了样品良好的铁电性质,在自旋电子器件和微波器件中具有潜在的应用前景。
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引用次数: 0
Origin of Metallicity in Molybdenum: A First Principle Calculation 钼金属丰度的起源:第一性原理计算
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S106378342460167X
Omamoke O. E. Enaroseha, Obed Oyibo, Aziakpono Blessing Umukoro, Uyiosa O. Aigbe

This study focuses on the electronic band structure, lattice dynamics, density of states, and mechanical properties of molybdenum (Mo), using first-principle calculations. The results obtained show that Mo exhibits metallic behavior with high electrical conductivity. The bands gap at the Fermi level (around 0 eV) are overlapping, which is characteristic of metals and indicates high electrical conductivity. As the temperature increases, the vibrational energy of Mo rises, while its vibrational free energy decreases. Furthermore, the entropy and heat capacity of Mo also increase with temperature. These findings have important implications for the use of Mo in various applications, as they can help optimize its current uses and potentially lead to the development of new technologies.

本研究的重点是利用第一性原理计算钼(Mo)的电子能带结构、晶格动力学、态密度和力学性能。结果表明,Mo具有较高的导电性能。在费米能级(约0 eV)的带隙是重叠的,这是金属的特征,表明高导电性。随着温度的升高,Mo的振动能增大,而其振动自由能减小。Mo的熵和热容也随温度的升高而增大。这些发现对Mo在各种应用中的使用具有重要意义,因为它们可以帮助优化其当前用途,并可能导致新技术的开发。
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引用次数: 0
Deposition and Characterization of As-Grown and Annealed Titanium Dioxide (TiO2) Thin Film 生长和退火二氧化钛(TiO2)薄膜的沉积和表征
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601395
Samuel Emuvokeraye Omoyibo, Mike O. Osiele, Adrian Ohwofosirai, Edwin Ehis Amiegbereta

In this work, titanium dioxide (TiO2) was deposited on a microscopic glass substrate by means of the spray pyrolysis method. The precursor was made of one molar solution of titanium(III) chloride propanol and glacial acetic acid thoroughly mixed. The deposited thin films were annealed at 450 and 600°C, respectively. The optical and structural properties of the as-grown and the annealed thin films were studied using a spectrophotometer, X-ray power diffractometer, and scanning electron microscopy. The result obtained revealed that TiO2 absorbs, reflects, and transmits light in the wavelength range of 200–1000 nm. The TiO2 thin films have good optical properties in the ultraviolet region of the electromagnetic spectrum. The as-grown and annealed TiO2 thin films have bandgap energy varying from 1.6–2.2 eV depending on the annealing temperature. The X-ray diffraction study reveals that the peak positions do not change due to the annealing. Still, the annealed sample has a high intensity that seems to depend on the annealing temperature. Annealing of TiO2 causes the surface to be more uniform, devoid-free, and with improved surface structure.

在这项工作中,二氧化钛(TiO2)通过喷雾热解法沉积在微观玻璃基板上。前驱体由氯化钛(III)、丙醇和冰醋酸的一摩尔溶液充分混合而成。制备的薄膜分别在450℃和600℃退火。利用分光光度计、x射线衍射仪和扫描电子显微镜研究了生长薄膜和退火薄膜的光学和结构特性。结果表明,TiO2对200 ~ 1000nm波长范围内的光进行吸收、反射和透射。TiO2薄膜在电磁波谱的紫外区具有良好的光学性能。随着退火温度的变化,生长和退火后的TiO2薄膜的带隙能在1.6 ~ 2.2 eV之间变化。x射线衍射研究表明,峰的位置不因退火而改变。然而,退火后的样品具有高强度,这似乎取决于退火温度。TiO2退火后表面更加均匀,无杂质,表面结构得到改善。
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引用次数: 0
Comparative Studies on the Source Pocket Hetero Dielectric Double Gate TFET (SP-HD-DG-TFET): Varying Width of the Source Pocket 源袋异介电双栅极TFET (SP-HD-DG-TFET)的比较研究:源袋宽度的变化
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601048
S. K. Pandit, B. P. Pandey, S. Shrestha, K. K. Kavi, O. P. Niraula

Tunnel field effect transistor (TFET) is replacing other similar devices, because of it’s extremely lower value of sub-threshold swing (SS) and leakage current. Due to the limitations of ambipolar effect and relatively lower value of ON-current, researches are trying to enhance the performance of it by modification in the structure and choice of appropriate materials. To increase the ON-current, a highly dense thin layer source pocket (SP) is used and reduction of the ambipolar current is done by using hetero dielectric as a gate. Hence, various characteristics/properties and parameters of source pocket hetero dielectric double gate TFET (SP-HD-DG-TFET) are studied by varying the width of the SP by 4, 6, and 8 nm. By using the Silvaco TCAD, it is found that the current ratio decreases and SS increases with increase in the width of the SP. Hence, the lower value of the width of the SP is considered to be suitable for low power and high speed application.

隧道场效应晶体管(TFET)以其极低的亚阈值摆幅(SS)和漏电流,正在取代其他同类器件。由于双极效应的局限性和相对较低的on电流值,研究人员试图通过改变其结构和选择合适的材料来提高其性能。为了增加导通电流,采用了高密度薄层源袋(SP),并利用异质介质作为栅极来减小双极电流。因此,通过改变SP的宽度4、6和8 nm,研究了源袋异质介质双栅极TFET (SP- hd - dg -TFET)的各种特性和参数。通过使用Silvaco TCAD,发现随着SP宽度的增加,电流比减小,SS增大,因此认为SP宽度较低的值适合于低功耗和高速应用。
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引用次数: 0
Thin ZnTe:Cu Films Fabricated by Pulse Laser Deposition 脉冲激光沉积制备ZnTe:Cu薄膜
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601656
M. A. Jafarov, A. G. Kyazymzade, E. F. Nasirov, S. A. Jahangirova

Thin ZnTe:Cu films are prepared by pulse laser deposition. ZnTe films were doped with Cu to increase the p type carrier concentration and to state the influence of the Cu concentration on their structural, optical, and electrical properties and also to consider their potential applications in electronic devices. X-ray diffraction studies, studies of X-ray photoelectron spectroscopy, UV-visible spectroscopy, and the Hall effect of ZnTe:Cu films are performed.

采用脉冲激光沉积法制备了ZnTe:Cu薄膜。在ZnTe薄膜中掺杂Cu以增加p型载流子浓度,并说明Cu浓度对其结构、光学和电学性能的影响,同时考虑其在电子器件中的潜在应用。进行了ZnTe:Cu薄膜的x射线衍射、x射线光电子能谱、紫外可见光谱和霍尔效应的研究。
{"title":"Thin ZnTe:Cu Films Fabricated by Pulse Laser Deposition","authors":"M. A. Jafarov,&nbsp;A. G. Kyazymzade,&nbsp;E. F. Nasirov,&nbsp;S. A. Jahangirova","doi":"10.1134/S1063783424601656","DOIUrl":"10.1134/S1063783424601656","url":null,"abstract":"<p>Thin ZnTe:Cu films are prepared by pulse laser deposition. ZnTe films were doped with Cu to increase the <i>p</i> type carrier concentration and to state the influence of the Cu concentration on their structural, optical, and electrical properties and also to consider their potential applications in electronic devices. X-ray diffraction studies, studies of X-ray photoelectron spectroscopy, UV-visible spectroscopy, and the Hall effect of ZnTe:Cu films are performed.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"670 - 673"},"PeriodicalIF":0.9,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Density Functional Theory Study of the Electronic Properties of Isovalent Mg-Substituting-Ba for BaFe2As2 等价mg - ba取代BaFe2As2电子性质的密度泛函理论研究
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601449
Xiong Li

Doping at various positions of BaFe2As2, providing stable chemical pressure and adjusting carriers, has always been a popular research topic. In the work, we conducted a comprehensive theoretical study on the isovalent Mg-substituting-Ba for BaFe2As2 by using the density functional theory (DFT) method. All DFT calculations were performed with the set of GTH-PBE/DZVP-MOLOPT-SR-GTH. By exhaustively post-processing the DFT-calculated wavefunction, the electronic properties such as HOCO, ELF, BO, charge population, LOL-π, IRI, etc., were reported. Up to now, the investigations of electronic properties for novel Mg-doped BaFe2As2 based on the generated wavefunction are barely, thus it is well expected that our results with the corresponding method will benefit the research of the Fe-based superconductors family.

在BaFe2As2的不同位置掺杂,提供稳定的化学压力和调节载流子,一直是一个热门的研究课题。本文采用密度泛函理论(DFT)方法对mg - ba等价取代BaFe2As2进行了全面的理论研究。所有DFT计算均使用GTH-PBE/ dzpv - molopt - sr - gth进行。通过对dft计算的波函数进行穷尽后处理,得到了HOCO、ELF、BO、电荷居数、LOL-π、IRI等电子性质。到目前为止,基于生成的波函数对新型mg掺杂BaFe2As2的电子性质的研究还很少,因此我们的研究结果和相应的方法将有利于铁基超导体家族的研究。
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引用次数: 0
Synthesis and Characterization of BaCe0.6–xZr0.3SmxPr0.1O3–δ Compound BaCe0.6-xZr0.3SmxPr0.1O3 -δ化合物的合成与表征
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601206
Shahzad Hossain, Md. Masud Parvez, Abdalla M. Abdalla, M. Serajus S. Chowdhury, Mohammed T. Chowdhury, Shafinaz A. Lopa, Cristian D. Savaniu, Mst. S. Aktar, Juliana Zaini, John T. S. Irvine, Abul K. Azad

The perovskite type compounds of BaCe0.6–xZr0.3SmxPr0.1O3–δ (x = 0.1, 0.2, 0.3, and 0.4; named as BCZSP1, BCZSP2, BCZSP3, and BCZSP4, respectively) were synthesized by the dry chemistry reaction method. The structure, phase, microstructure, impedance spectroscopy and chemical stability of the synthesized compounds were investigated by different techniques. The XRD data of the materials showed the cubic crystal symmetry within the Pm–3m space group. The Chekcell and WinXPow software were used to index the crystal symmetry and space group of the XRD data and the FullProf suite software was utilized to carry out the Rietveld refinements of the acquired XRD data. The scanning electron microscopy (SEM) was used to examine the grain morphology and grain growth of the materials, and the SEM results indicate that all of the materials had densities more than 97% of the theoretical density. The thermogravimetric analysis (TGA) of the materials in the CO2 gas atmosphere exhibited superior stability. The protonic conductivity was found the highest in the wet 5% H2 in argon (Ar) gas environment for the BCZSP1 (x = 0.10) material and were ~1.19 × 10–2 and ~1.03 × 10–2 S cm–1 at 650 and 700°C, respectively. The highest stability was for BCZSP4 in the CO2 gas environment for the four samples of the BCZSP series. At intermediate temperatures (500–700°C), the materials show potential electrolyte behavior for applications in solid oxide fuel cell that transport protons.

钙钛矿型化合物BaCe0.6-xZr0.3SmxPr0.1O3 -δ (x = 0.1, 0.2, 0.3, 0.4;分别命名为BCZSP1、BCZSP2、BCZSP3和BCZSP4)。采用不同的方法对合成的化合物的结构、物相、微观结构、阻抗谱和化学稳定性进行了研究。XRD数据表明,材料在Pm-3m空间群内具有立方晶体对称性。利用Chekcell和WinXPow软件对XRD数据的晶体对称性和空间群进行索引,利用FullProf suite软件对采集的XRD数据进行Rietveld细化。利用扫描电子显微镜(SEM)对材料的晶粒形貌和晶粒生长进行了观察,结果表明,所有材料的密度均大于理论密度的97%。材料在CO2气氛中的热重分析(TGA)表现出优异的稳定性。BCZSP1 (x = 0.10)材料在湿5% H2氩气环境下的质子电导率最高,在650℃和700℃时分别为~1.19 × 10-2和~1.03 × 10-2 S cm-1。BCZSP系列4个样品在CO2气体环境中的稳定性最高。在中间温度(500-700°C)下,材料表现出潜在的电解质行为,可用于输送质子的固体氧化物燃料电池。
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引用次数: 0
Electronic and Magnetic Properties of Ni2–xPtxMnGa Cubic Alloys Ni2-xPtxMnGa立方合金的电子和磁性能
IF 0.9 4区 物理与天体物理 Q4 PHYSICS, CONDENSED MATTER Pub Date : 2025-01-14 DOI: 10.1134/S1063783424601383
A. Boularaf, F. Drief, A. Zaoui, S. Kacimi

In this study, we have established a careful analysis on the effect of Pt substitution at Ni sites on the electronic structure and magnetic properties of the Ni2MnGa system in both cubic and tetragonal phases using FP-LAPW+lo method based on density functional theory. Two Pt concentrations were investigated x = 0.125 and 0.250 in Ni2–xPtxMnGa Heusler alloys using the supercell model. GGA+U calculations show that Ni2–xPtxMnGa alloys (x = 0, 0.125, 0.250) are stable in the cubic structure and the lattice parameters increase linearly with increasing platinum concentration. Band structure calculations show overlapping bands at the Fermi level indicating that these alloys are metallic. The atomic and total magnetic moments increase with increasing Pt concentration, which is responsible to the strengthening of ferromagnetism in these alloys. The anisotropy energy calculations predict that [100] and [010] axis are the easy and hard one respectively in our cubic ferromagnetic Pt doped Heusler. Our Pt doped Ni2MnGa alloys could be synthesized to obtained novel shape memory alloys.

在本研究中,我们基于密度泛函理论,利用FP-LAPW+lo方法对Ni2MnGa体系在立方相和四方相的电子结构和磁性能进行了细致的分析。采用超级单体模型研究了Ni2-xPtxMnGa Heusler合金中Pt浓度分别为0.125和0.250的情况。GGA+U计算表明,Ni2-xPtxMnGa合金(x = 0, 0.125, 0.250)具有稳定的立方结构,晶格参数随铂浓度的增加呈线性增加。能带结构计算显示在费米能级上的重叠能带表明这些合金是金属的。原子磁矩和总磁矩随Pt浓度的增加而增大,这是合金铁磁性增强的原因。各向异性能量计算预测了[100]和[010]轴分别是立方铁磁Pt掺杂Heusler中的易轴和硬轴。我们的铂掺杂Ni2MnGa合金可以合成新型形状记忆合金。
{"title":"Electronic and Magnetic Properties of Ni2–xPtxMnGa Cubic Alloys","authors":"A. Boularaf,&nbsp;F. Drief,&nbsp;A. Zaoui,&nbsp;S. Kacimi","doi":"10.1134/S1063783424601383","DOIUrl":"10.1134/S1063783424601383","url":null,"abstract":"<p>In this study, we have established a careful analysis on the effect of Pt substitution at Ni sites on the electronic structure and magnetic properties of the Ni<sub>2</sub>MnGa system in both cubic and tetragonal phases using FP-LAPW+<i>lo</i> method based on density functional theory. Two Pt concentrations were investigated <i>x</i> = 0.125 and 0.250 in Ni<sub>2–<i>x</i></sub>Pt<sub><i>x</i></sub>MnGa Heusler alloys using the supercell model. GGA+<i>U</i> calculations show that Ni<sub>2–<i>x</i></sub>Pt<sub><i>x</i></sub>MnGa alloys (<i>x</i> = 0, 0.125, 0.250) are stable in the cubic structure and the lattice parameters increase linearly with increasing platinum concentration. Band structure calculations show overlapping bands at the Fermi level indicating that these alloys are metallic. The atomic and total magnetic moments increase with increasing Pt concentration, which is responsible to the strengthening of ferromagnetism in these alloys. The anisotropy energy calculations predict that [100] and [010] axis are the easy and hard one respectively in our cubic ferromagnetic Pt doped Heusler. Our Pt doped Ni<sub>2</sub>MnGa alloys could be synthesized to obtained novel shape memory alloys.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"66 12","pages":"625 - 633"},"PeriodicalIF":0.9,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142976595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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Physics of the Solid State
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