Direct Bandgap Ge0.846Sn0.154 Photodiodes for Gas Sensing in the Mid-Wave Infrared

IF 4.3 2区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-20 DOI:10.1109/JSTQE.2024.3520704

Clément Cardoux;Lara Casiez;Eric Kroemer;Marvin Frauenrath;Jérémie Chrétien;Nicolas Pauc;Vincent Calvo;Jean-Michel Hartmann;Olivier Lartigue;Christophe Constancias;Pierre Barritault;Nicolas Coudurier;Philippe Rodriguez;Aurélie Vandeneynde;Philippe Grosse;Olivier Gravrand;Alexei Chelnokov;Vincent Reboud

{"title":"Direct Bandgap Ge0.846Sn0.154 Photodiodes for Gas Sensing in the Mid-Wave Infrared","authors":"Clément Cardoux;Lara Casiez;Eric Kroemer;Marvin Frauenrath;Jérémie Chrétien;Nicolas Pauc;Vincent Calvo;Jean-Michel Hartmann;Olivier Lartigue;Christophe Constancias;Pierre Barritault;Nicolas Coudurier;Philippe Rodriguez;Aurélie Vandeneynde;Philippe Grosse;Olivier Gravrand;Alexei Chelnokov;Vincent Reboud","doi":"10.1109/JSTQE.2024.3520704","DOIUrl":null,"url":null,"abstract":"Recently, all-group-IV (Si)GeSn alloys attracted great attention as materials for Infra-Red optoelectronics monolithically integrated on Si substrates. In this work, we present the fabrication and the electro-optical characterization of direct bandgap GeSn photodiodes with 15.4% of Sn grown on Ge Strain-Relaxed Buffers, themselves on 200 mm Si(001) wafers. The Ge0.846Sn0.154 photodetectors have a cutoff wavelength of 3.5 μm, e.g., they are suitable for methane detection around 3.3 μm. At this wavelength, their specific detectivity D* at room temperature is 3.76 × 107 cm.Hz1/2.W−1. This detectivity is 60 times better than that of previously reported photodetectors with equivalent Sn content. When such Ge0.846Sn0.154 photodiodes are placed in a gas cell together with a commercial Light Emitting Diode emitting at 3.3 μm, the system presents a limit of detection for methane of 1 600 parts per million with a noise density of 0.78%.Hz−1/2.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 1: SiGeSn Infrared Photon. and Quantum Electronics","pages":"1-8"},"PeriodicalIF":4.3000,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10810426/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Recently, all-group-IV (Si)GeSn alloys attracted great attention as materials for Infra-Red optoelectronics monolithically integrated on Si substrates. In this work, we present the fabrication and the electro-optical characterization of direct bandgap GeSn photodiodes with 15.4% of Sn grown on Ge Strain-Relaxed Buffers, themselves on 200 mm Si(001) wafers. The Ge_0.846Sn_0.154 photodetectors have a cutoff wavelength of 3.5 μm, e.g., they are suitable for methane detection around 3.3 μm. At this wavelength, their specific detectivity D* at room temperature is 3.76 × 10⁷ cm.Hz^1/2.W⁻¹. This detectivity is 60 times better than that of previously reported photodetectors with equivalent Sn content. When such Ge_0.846Sn_0.154 photodiodes are placed in a gas cell together with a commercial Light Emitting Diode emitting at 3.3 μm, the system presents a limit of detection for methane of 1 600 parts per million with a noise density of 0.78%.Hz^−1/2.

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用于中波红外气体传感的直接带隙光电二极管Ge0.846Sn0.154

近年来，全族iv (Si)GeSn合金作为单片集成在Si衬底上的红外光电子材料备受关注。在这项工作中，我们介绍了直接带隙GeSn光电二极管的制造和电光特性，其中15.4%的Sn生长在Ge应变松弛缓冲器上，其本身位于200 mm Si（001）晶片上。Ge0.846Sn0.154光电探测器的截止波长为3.5 μm，适用于检测3.3 μm左右的甲烷。在该波长下，其室温比探测率D*为3.76 × 107 cm.Hz1/2.W−1。这种探测能力是以前报道的具有同等锡含量的光电探测器的60倍。当这种Ge0.846Sn0.154光电二极管与3.3 μm的商用发光二极管一起放置在气池中时，该系统对甲烷的检测限为1600 ppm，噪声密度为0.78%.Hz−1/2。

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来源期刊

IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程：电子与电气

CiteScore

10.60

自引率

2.00%

发文量

212

审稿时长

3 months

期刊介绍： Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.