Micrometer-Scale Silicon Modulator for O-Band Coherent Interconnects Beyond 100 GBaud

IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-12-27 DOI:10.1109/JSTQE.2024.3523402
Alireza Geravand;Erwan Weckenmann;Zibo Zheng;Jean-Michel Vallée;Simon Levasseur;Leslie Rusch;Wei Shi
{"title":"Micrometer-Scale Silicon Modulator for O-Band Coherent Interconnects Beyond 100 GBaud","authors":"Alireza Geravand;Erwan Weckenmann;Zibo Zheng;Jean-Michel Vallée;Simon Levasseur;Leslie Rusch;Wei Shi","doi":"10.1109/JSTQE.2024.3523402","DOIUrl":null,"url":null,"abstract":"Energy-efficient coherent optics is emerging as a key solution to address the escalating communication demands of large-scale artificial intelligence (AI) and machine learning (ML) tasks. These applications require compact, high-speed, and energy-efficient coherent transceivers. We present an ultra-compact, all-silicon I/Q modulator operating in the O-band, specifically designed for coherent interconnects. The modulator leverages microring-assisted Mach-Zehnder modulators (MRA-MZMs) in a single-drive push-pull configuration, ensuring low-chirp modulation as well as precise electrical phase matching in the push-pull operation. We demonstrate a 6-dB electro-optical bandwidth of 54 GHz and achieve QPSK modulation at speeds up to 120 Gbaud, resulting in a net bit rate of 200 Gbps per wavelength and polarization. With its compact design, the modulator achieves a bandwidth density of 2 Tbps/mm. Furthermore, its versatile architecture supports wavelength division multiplexing and dual-polarization, enabling further capacity expansion.","PeriodicalId":13094,"journal":{"name":"IEEE Journal of Selected Topics in Quantum Electronics","volume":"31 3: AI/ML Integrated Opto-electronics","pages":"1-9"},"PeriodicalIF":4.3000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Selected Topics in Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10817089/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Energy-efficient coherent optics is emerging as a key solution to address the escalating communication demands of large-scale artificial intelligence (AI) and machine learning (ML) tasks. These applications require compact, high-speed, and energy-efficient coherent transceivers. We present an ultra-compact, all-silicon I/Q modulator operating in the O-band, specifically designed for coherent interconnects. The modulator leverages microring-assisted Mach-Zehnder modulators (MRA-MZMs) in a single-drive push-pull configuration, ensuring low-chirp modulation as well as precise electrical phase matching in the push-pull operation. We demonstrate a 6-dB electro-optical bandwidth of 54 GHz and achieve QPSK modulation at speeds up to 120 Gbaud, resulting in a net bit rate of 200 Gbps per wavelength and polarization. With its compact design, the modulator achieves a bandwidth density of 2 Tbps/mm. Furthermore, its versatile architecture supports wavelength division multiplexing and dual-polarization, enabling further capacity expansion.
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用于100 GBaud以上的o波段相干互连的微米级硅调制器
节能相干光学正在成为解决大规模人工智能(AI)和机器学习(ML)任务不断升级的通信需求的关键解决方案。这些应用需要紧凑、高速和节能的相干收发器。我们提出了一种超紧凑的全硅I/Q调制器,工作在o波段,专为相干互连而设计。该调制器在单驱动推挽配置中利用微微辅助Mach-Zehnder调制器(MRA-MZMs),确保在推挽操作中实现低啁啾调制以及精确的电相位匹配。我们展示了54 GHz的6db电光带宽,并在高达120 Gbaud的速度下实现了QPSK调制,从而使每个波长和极化的净比特率达到200 Gbps。凭借其紧凑的设计,调制器实现了2 Tbps/mm的带宽密度。此外,其多功能架构支持波分复用和双极化,从而实现进一步的容量扩展。
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来源期刊
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
10.60
自引率
2.00%
发文量
212
审稿时长
3 months
期刊介绍: Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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