Preparation of High-performance BaTiO3 Nanoparticles-embedded Porous Silicon Photodetectors by Electrochemical Etching and Laser Ablation in Liquid

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-11-12 DOI:10.1007/s12633-024-03194-3
Raid A. Ismail, Sinai A. Huseen, Taka D. Abass, Suaad S. Salim, Alwan M. Alwan
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Abstract

In this work, BaTiO3 nanoparticles synthesized by laser ablation were embedded in p-type and n-type porous silicon (PSi), which were prepared using an electrochemical etching method. Structural analysis confirmed that the synthesized BaTiO3 nanoparticles are crystalline with a tetragonal structure. The direct optical energy gap of the BaTiO3 nanoparticles was found to be 3.75 eV at room temperature. Scanning electron microscopy revealed that the synthesized BaTiO3 nanoparticles have a spherical morphology with an average particle size of 34 nm. The optoelectronic properties of BaTiO3-embedded n-type and p-type porous silicon photodetectors were investigated, including dark and illuminated current–voltage characteristics, responsivity, external quantum efficiency, and specific detectivity. The responsivity of n-BaTiO3-embedded p-PSi and n-BaTiO3- embedded n-PSi was 0.44 and 0.12 A/W at 350 nm, respectively. Energy band diagrams under illumination conditions were constructed for n-BaTiO3-embedded p-PSi and n-BaTiO3- embedded n-PSi heterojunction photodetector.

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电化学蚀刻和激光烧蚀制备高性能纳米BaTiO3嵌入多孔硅光电探测器
本研究将激光烧蚀法制备的BaTiO3纳米颗粒嵌入电化学刻蚀法制备的p型和n型多孔硅(PSi)中。结构分析证实,合成的BaTiO3纳米颗粒呈结晶状,呈四边形结构。在室温下,BaTiO3纳米颗粒的直接光能隙为3.75 eV。扫描电镜显示,合成的BaTiO3纳米颗粒呈球形,平均粒径为34 nm。研究了嵌入batio3的n型和p型多孔硅光电探测器的光电性能,包括黑暗和照明电流电压特性、响应率、外量子效率和比探测率。在350 nm处,n-BaTiO3包埋p-PSi和n-BaTiO3包埋n-PSi的响应度分别为0.44和0.12 A/W。构建了n-BaTiO3包埋p-PSi和n-BaTiO3包埋n-PSi异质结光电探测器在光照条件下的能带图。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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