Su Hu, Kang'an Jiang, Yunyang He, Peng Bao, Nan Su, Xinhui Zhao, Hui Wang
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引用次数: 0
Abstract
Both stability and multi-level switching are crucial performance aspects for resistive random-access memory (RRAM), each playing a significant role in improving overall device performance. In this study, we successfully integrate these two features into a single RRAM configuration by embedding Ag-nanoparticles (Ag-NPs) into the TiN/Ta2O5/ITO structure. The device exhibits substantially lower switching voltages, a larger switching ratio, and multi-level switching phenomena compared to many other nanoparticle-embedded devices. We attribute it to the embedded Ag-NPs effectively switching the mechanism of conductive filaments and the controlled distribution of Ag-NPs facilitates the occurrence of multi-level switching. Additionally, the fabricated structure demonstrated an impressive optical transmittance of nearly 85%. Undoubtedly, this combined feature of RRAM not only enhances stability but also enables multi-level switching, thereby demonstrating an approach to fabricating versatile and practical electronic devices aimed at boosting storage capacity and speed.
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期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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