Selective area molecular beam epitaxy of InSb on InP(111)_B: from thin films to quantum nanostructures.

IF 2.9 4区材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Nanotechnology Pub Date : 2025-01-24 DOI:10.1088/1361-6528/adaafb

W Khelifi, P Capiod, C Barbot, C Coinon, Y Deblock, C N Santos, N Chaize, M Berthe, P-H Jouneau, S Amarie, J-F Lampin, X Wallart, Ph Ballet, B Grandidier, L Desplanque

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Abstract

InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)_Bsubstrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio. The quality of the films is further studied with Hall measurements on large-scale devices to assess the impact of the InSb surface and InSb/InP interface on the electronic properties. Taking advantage of the optimized growth conditions for the formation of thin films, the selective area molecular beam epitaxial growth of nanostructures is subsequently investigated. Based on cross-sectional transmission electron microscopy and scanning near-field optical microscopy in the middle-wave infrared, ultra-thin and very long in-plane InSb nanowires as well as more complex nanostructures such as nano-rings and crosses are achieved with a good structural quality.

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InSb在InP(111)B上的选择性区分子束外延：从薄膜到量子纳米结构。

InSb是红外和自旋电子器件的首选材料，但其在大晶格不匹配半绝缘III-V基板上的集成迄今已改变了其特殊性能。本文采用分子束外延生长的方法研究了InSb在InP(111)B衬底上的直接生长。尽管缺乏厚的变质缓冲层来调节，但我们表明，使用非常高的Sb/In通量比可以获得准连续薄膜。通过在大型器件上的霍尔测量进一步研究了薄膜的质量，以评估InSb表面和InSb/InP界面对电子性能的影响。利用优化后的生长条件，研究了分子束外延纳米结构的选择性区域生长。基于中波红外截面透射电子显微镜和扫描近场光学显微镜，获得了超薄超长的面内InSb纳米线以及纳米环、纳米叉等更为复杂的纳米结构，且结构质量良好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nanotechnology 工程技术-材料科学：综合

CiteScore

7.10

自引率

5.70%

发文量

820

审稿时长

2.5 months

期刊介绍： The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.