Bowen Zhang, Yu Hao, Chao Shi, Shuangshuang Pu, Xiaohua Wang, Dengkui Wang, Dan Fang, Hao Yan, Jinhua Li, Xuan Fang
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引用次数: 0
Abstract
Quasi-two-dimensional nanosheets exhibit novel properties and promising applications in optoelectronic flexible devices. Research on non-layered III-V semiconductor nanosheets has been constrained by their covalent bonding connections. In this study, GaAs/AlGaAs heterojunction nanosheets were prepared by releasing an epitaxial layer, and their optical properties were investigated by adopting steady-state and transient absorption spectroscopy. The optical properties of the independent GaAs/AlGaAs heterojunction were investigated separately in order to exclude the effect of the substrate. This work provides a comprehensive understanding of the physics of III-V semiconductor quasi-two-dimensional nanosheets.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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