{"title":"Sensorless Junction Temperature Estimation of Onboard SiC MOSFETs Using Dual-Gate-Bias-Triggered Third-Quadrant Characteristics.","authors":"Yansong Lu, Yijun Ding, Jia Li, Hao Yin, Xinlian Li, Chong Zhu, Xi Zhang","doi":"10.3390/s25020571","DOIUrl":null,"url":null,"abstract":"<p><p>Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques. This paper proposes a high-efficiency datasheet-driven method for sensorless estimation utilizing the third-quadrant characteristics of MOSFETs. Without changing the existing hardware, the closure degree of MOS channels is controlled through a dual-gate bias (DGB) strategy to achieve reverse conduction in different patterns with body diodes. This method introduces a MOSFET operating current that TSEPs are equally sensitive to into the two-argument function, improving the complexity and accuracy. A two-stage current pulse is used to decouple the motor effect in various conduction modes, and the TSEP-combined temperature function is built dynamically by substituting the currents. Then, the junction temperature is estimated by the measured bus voltage and current. Its effectiveness was verified through spice model simulation and a test bench with a three-phase inverter. The average relative estimation error of the proposed method is below 7.2% in centigrade.</p>","PeriodicalId":21698,"journal":{"name":"Sensors","volume":"25 2","pages":""},"PeriodicalIF":3.4000,"publicationDate":"2025-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11768603/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors","FirstCategoryId":"103","ListUrlMain":"https://doi.org/10.3390/s25020571","RegionNum":3,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) are a future trend in traction inverters in electric vehicles (EVs), and their thermal safety is crucial. Temperature-sensitive electrical parameters' (TSEPs) indirect detection normally requires additional circuits, which can interfere with the system and increase costs, thereby limiting applications. Therefore, there is still a lack of cost-effective and sensorless thermal monitoring techniques. This paper proposes a high-efficiency datasheet-driven method for sensorless estimation utilizing the third-quadrant characteristics of MOSFETs. Without changing the existing hardware, the closure degree of MOS channels is controlled through a dual-gate bias (DGB) strategy to achieve reverse conduction in different patterns with body diodes. This method introduces a MOSFET operating current that TSEPs are equally sensitive to into the two-argument function, improving the complexity and accuracy. A two-stage current pulse is used to decouple the motor effect in various conduction modes, and the TSEP-combined temperature function is built dynamically by substituting the currents. Then, the junction temperature is estimated by the measured bus voltage and current. Its effectiveness was verified through spice model simulation and a test bench with a three-phase inverter. The average relative estimation error of the proposed method is below 7.2% in centigrade.
期刊介绍:
Sensors (ISSN 1424-8220) provides an advanced forum for the science and technology of sensors and biosensors. It publishes reviews (including comprehensive reviews on the complete sensors products), regular research papers and short notes. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. The full experimental details must be provided so that the results can be reproduced.