Corrigendum: solution and solubility of H atoms at the W/Cu interface (2024J. Phys.: Condens. Matter 36 465001).

IF 2.6 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Journal of Physics: Condensed Matter Pub Date : 2025-01-27 DOI:10.1088/1361-648X/ada7b7
Y Silva-Solís, J Denis, E A Hodille, Y Ferro
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Abstract

Metallic interfaces are locations where hydrogen (H) is expected to segregate and lead to the formation and stabilization of defects. This work focuses on the tungsten/copper (W/Cu) interface built according to theWbcc(001)/Cuhcp(112¯0)orientation. H behavior is subsequently determined at the interface and in its vicinity with electronic structure calculations based on the density functional theory. The electronic and vibrational properties determined in this way followed a thermodynamic treatment to deliver the solubility of H as a function of the temperature and chemical potential. The 96 interstitial positions we investigated reveal that H predominantly occupies the octahedral (Oh) sites in the copper network. Reversely, H exclusively occupies the tetrahedral (Td) sites in the tungsten network. The solubility of H is higher in the interface plane where both octahedral and tetrahedral sites are occupied. Despite this work is a first step toward kinetic modeling of hydrogen transport across the W/Cu interface, we conclude that theWbcc(001)/Cuhcp(112¯0)would behave like a sink where hydrogen isotopes could accumulate.

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勘误:H原子在W/Cu界面上的溶解和溶解度(2024J)。理论物理。:提供者。物质36 465001)。
金属界面是氢(H)有望分离并导致缺陷形成和稳定的位置。这项工作的重点是根据wbcc (001)/Cuhcp(112¯0)取向构建的钨/铜(W/Cu)接口。随后,基于密度泛函理论的电子结构计算确定了界面及其附近的H行为。以这种方式确定的电子和振动性质遵循热力学处理,以传递H的溶解度作为温度和化学势的函数。我们研究的96个间隙位置表明,H主要占据铜网络中的八面体(Oh)位点。相反,H完全占据了钨网络中的四面体(Td)位点。在同时占据八面体和四面体位点的界面面上,H的溶解度更高。尽管这项工作是氢通过W/Cu界面传输动力学建模的第一步,但我们得出的结论是,wbcc (001)/Cuhcp(112¯0)将表现得像一个氢同位素可以积累的汇。
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来源期刊
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter 物理-物理:凝聚态物理
CiteScore
5.30
自引率
7.40%
发文量
1288
审稿时长
2.1 months
期刊介绍: Journal of Physics: Condensed Matter covers the whole of condensed matter physics including soft condensed matter and nanostructures. Papers may report experimental, theoretical and simulation studies. Note that papers must contain fundamental condensed matter science: papers reporting methods of materials preparation or properties of materials without novel condensed matter content will not be accepted.
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