{"title":"Monolithic on-chip integration of micro-thin film thermocouples on multifinger gallium oxide MOSFETs","authors":"Hassan Irshad Bhatti, Ganesh Mainali, Xiaohang Li","doi":"10.1063/5.0250985","DOIUrl":null,"url":null,"abstract":"Gallium oxide (Ga2O3), with its ultra-wide bandgap (>4.5 eV), is a key material for the next-generation power electronics due to its high breakdown voltage and efficient power-switching capabilities. Multifinger (MF) Ga2O3 MOSFETS, designed to enhance current handling and thermal management, experience significant self-heating effects that can lead to localized hotspots, thermal runaway, and reduced device reliability. Accurate thermal characterization is therefore critical to ensure the reliable operation and longevity of such devices. Conventional methods, such as thermoreflectance imaging, Raman thermometry, and infrared thermography, are limited by complex setups, slow response times, resolution constraints, and cost, making them less practical for real-time, on-chip applications. On-chip thermal characterization directly at the active regions of the device provides an unparalleled opportunity to overcome these limitations by capturing localized temperature variations during operation. In this study, we demonstrate the integration of micro-thin film thermocouples (micro-TFTCs) onto multifinger Ga2O3 MOSFETs for precise, real-time, and localized thermal monitoring. The sensors captured temperature variations across different gate fingers, with the measured maximum channel temperature reaching 40.5 °C under peak power dissipation. Predicted thermal behavior under high power densities shows temperatures rising to approximately 80 °C at 5 W/mm2, illustrating the thermal challenges faced by Ga2O3 devices. This work demonstrates that micro-TFTCs are not only compatible with complex device architectures but also highly effective for localized thermal characterization, making them a promising tool for improving the thermal management and reliability of Ga2O3-based power electronics.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0250985","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium oxide (Ga2O3), with its ultra-wide bandgap (>4.5 eV), is a key material for the next-generation power electronics due to its high breakdown voltage and efficient power-switching capabilities. Multifinger (MF) Ga2O3 MOSFETS, designed to enhance current handling and thermal management, experience significant self-heating effects that can lead to localized hotspots, thermal runaway, and reduced device reliability. Accurate thermal characterization is therefore critical to ensure the reliable operation and longevity of such devices. Conventional methods, such as thermoreflectance imaging, Raman thermometry, and infrared thermography, are limited by complex setups, slow response times, resolution constraints, and cost, making them less practical for real-time, on-chip applications. On-chip thermal characterization directly at the active regions of the device provides an unparalleled opportunity to overcome these limitations by capturing localized temperature variations during operation. In this study, we demonstrate the integration of micro-thin film thermocouples (micro-TFTCs) onto multifinger Ga2O3 MOSFETs for precise, real-time, and localized thermal monitoring. The sensors captured temperature variations across different gate fingers, with the measured maximum channel temperature reaching 40.5 °C under peak power dissipation. Predicted thermal behavior under high power densities shows temperatures rising to approximately 80 °C at 5 W/mm2, illustrating the thermal challenges faced by Ga2O3 devices. This work demonstrates that micro-TFTCs are not only compatible with complex device architectures but also highly effective for localized thermal characterization, making them a promising tool for improving the thermal management and reliability of Ga2O3-based power electronics.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.