Thickness Dependence in Phase Formation and Properties of TaSe2 Layers Grown on GaP(111)B

IF 8.3 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2025-01-30 DOI:10.1021/acsami.4c17204
Corentin Sthioul, Yevheniia Chernukha, Houda Koussir, Christophe Coinon, Gilles Patriarche, David Troadec, Louis Thomas, Pascal Roussel, Bruno Grandidier, Pascale Diener, Xavier Wallart
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Abstract

The effect of growth temperature and subsequent annealing on the epitaxy of both single- and few-layer TaSe2 on Se-terminated GaP(111)B substrates is investigated. The selective growth of the 1T and 1H phases is shown up to 1 ML according to X-ray and ultraviolet photoelectron spectroscopies. The 1H monolayer, favored at low temperatures, exhibits a very homogeneous coverage after annealing, while the 1T ML, grown at high temperatures, is characterized by a better in-plane orientation. Moreover, X-ray photoelectron diffraction spectroscopy performed on 1T submonolayers shows a negligible amount of mirror twins. By contrast, in multilayers, scanning transmission electron microscopy always reveals a mixture of 2Ha and 3R polytypes with very few 1T. In addition, the multilayers become Se-deficient above 500 °C, and a new interfacial phase identified as Ta1+xSe2 or TaP appears. Finally, the optimized multilayers grown between 250 and 500 °C exhibit a similar metallic behavior with a resistivity comparable to the bulk one with valuable outcomes in the formation of electrical contacts for two-dimensional (2D) material-based devices.

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ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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