Modulating the interfacial electrochemical behavior of single layer graphene

Abstract

Single-layer graphene (SLG) is renowned for its unique electronic structure and zero band gap, which presents both opportunities and challenges in electrochemical systems, particularly due to its inherently inert heterogeneous electron transfer (HET) properties. Precisely tuning the physicochemical properties of SLG is crucial for optimizing its performance in electrochemical devices. For atomically thin SLG, subtle modifications to its electronic structure can enhance its heterogeneous charge transfer and surface reactivity effectively. Here we present a concise review on recent advances in modulating the interfacial electrochemical behavior of SLG and few-layer graphene, with a focus on defect engineering, layer number regulation, and interfacial engineering. We emphasize the impact of these strategies on modulating graphene's electronic structure, particularly concerning HET and electrochemical performance, and offer perspectives on future developments in this field.