Single-Crystal Silicon Thermal-Piezoresistive Resonators as High-Stability Frequency References

IF 3.1 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Microelectromechanical Systems Pub Date : 2024-12-27 DOI:10.1109/JMEMS.2024.3515098
Connor A. Watkins;Jaesung Lee;Jonathan P. McCandless;Harris J. Hall;X.-L. Feng Philip
{"title":"Single-Crystal Silicon Thermal-Piezoresistive Resonators as High-Stability Frequency References","authors":"Connor A. Watkins;Jaesung Lee;Jonathan P. McCandless;Harris J. Hall;X.-L. Feng Philip","doi":"10.1109/JMEMS.2024.3515098","DOIUrl":null,"url":null,"abstract":"This paper reports on single-crystal silicon (Si) thermal-piezoresistive resonators (TPRs) achieving ~0.2ppb-level frequency stability in phase-locked loop (PLL) measurements. A pair of resonators operating in a balanced-bridge configuration is presented, with one device being driven at resonance and the other used to null the parasitic background responses. The resonance frequency of the driven TPR has been measured over 40 hours with closed-loop continuous tracking by PLL and yields an Allan deviation <inline-formula> <tex-math>$\\sigma _{\\text {A}} \\approx 2.66$ </tex-math></inline-formula>ppb at an averaging time of <inline-formula> <tex-math>$\\tau \\approx 4.95$ </tex-math></inline-formula>s which is the best reported value among all Si TPRs studied to date. Further, an external DC power feedback loop is implemented alongside the PLL to enhance the frequency stability of the TPR, to achieve <inline-formula> <tex-math>$\\sigma _{\\text {A}} \\approx 0.236$ </tex-math></inline-formula>ppb at <inline-formula> <tex-math>$\\tau \\approx 1.2$ </tex-math></inline-formula>s, the best short-term frequency stability among all reported Si MEMS counterparts. This result suggests that such TPRs with precise DC control can potentially achieve frequency stabilities comparable to, or better than, existing state-of-the-art resonators used in oscillator circuits, with significantly reduced external thermal control requirements and power demands.[2024-0121]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"15-23"},"PeriodicalIF":3.1000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10817093/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This paper reports on single-crystal silicon (Si) thermal-piezoresistive resonators (TPRs) achieving ~0.2ppb-level frequency stability in phase-locked loop (PLL) measurements. A pair of resonators operating in a balanced-bridge configuration is presented, with one device being driven at resonance and the other used to null the parasitic background responses. The resonance frequency of the driven TPR has been measured over 40 hours with closed-loop continuous tracking by PLL and yields an Allan deviation $\sigma _{\text {A}} \approx 2.66$ ppb at an averaging time of $\tau \approx 4.95$ s which is the best reported value among all Si TPRs studied to date. Further, an external DC power feedback loop is implemented alongside the PLL to enhance the frequency stability of the TPR, to achieve $\sigma _{\text {A}} \approx 0.236$ ppb at $\tau \approx 1.2$ s, the best short-term frequency stability among all reported Si MEMS counterparts. This result suggests that such TPRs with precise DC control can potentially achieve frequency stabilities comparable to, or better than, existing state-of-the-art resonators used in oscillator circuits, with significantly reduced external thermal control requirements and power demands.[2024-0121]
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
作为高稳定频率参考的单晶硅热压阻谐振器
本文报道了单晶硅(Si)热压阻谐振器(tpr)在锁相环(PLL)测量中实现0.2ppb级频率稳定性。提出了一对工作在平衡桥结构中的谐振器,其中一个器件在谐振时被驱动,另一个用于消除寄生背景响应。驱动TPR的谐振频率已经用锁相环闭环连续跟踪测量了40小时,在$\tau \approx 4.95$ s的平均时间内产生了Allan偏差$\sigma _{\text {A}} \approx 2.66$ ppb,这是迄今为止研究的所有Si TPR中报道的最佳值。此外,与锁相环一起实现了外部直流电源反馈回路,以提高TPR的频率稳定性,在$\tau \approx 1.2$ s处达到$\sigma _{\text {A}} \approx 0.236$ ppb,这是所有报道的Si MEMS同类产品中最佳的短期频率稳定性。这一结果表明,这种具有精确直流控制的tpr可以潜在地实现与振荡器电路中使用的现有最先进谐振器相当或更好的频率稳定性,同时显着降低外部热控制要求和功率需求。[2024-0121]
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Journal of Microelectromechanical Systems
Journal of Microelectromechanical Systems 工程技术-工程:电子与电气
CiteScore
6.20
自引率
7.40%
发文量
115
审稿时长
7.5 months
期刊介绍: The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.
期刊最新文献
Front Cover Fabrication of Metallic Microcomponents by Microelectroforming Using Sandwich-Structured Silver-Polydimethylsiloxane Composite Molds Vertically-Excited High-Order Guided Shear Vertical Surface Acoustic Wave Resonators for 5G and Beyond Call for Nominations for Editor-in-Chief MEMS Resonator Q-Factor Improvement Using 3-D-Printed Acoustic Reflectors
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1