Pub Date : 2024-12-31DOI: 10.1109/JMEMS.2024.3522404
{"title":"2024 Index Journal of Microelectromechanical Systems Vol. 33","authors":"","doi":"10.1109/JMEMS.2024.3522404","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3522404","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"807-828"},"PeriodicalIF":2.5,"publicationDate":"2024-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10818783","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142905693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JMEMS.2024.3496135
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2024.3496135","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3496135","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10773390","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-03DOI: 10.1109/JMEMS.2024.3496173
{"title":"TechRxiv: Share Your Preprint Research With the World!","authors":"","doi":"10.1109/JMEMS.2024.3496173","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3496173","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"806-806"},"PeriodicalIF":2.5,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10773388","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Whisker sensors, typically fabricated by casting soft polymers, have a measurement range determined by the mechanical properties of the soft polymer used, specifically, its Young’s modulus. Traditional whisker sensors have fixed stiffness after fabrication, which limits their measurement range. However, this study introduced a sensor that integrates a jamming actuator with a whisker sensor, allowing for adjustable stiffness. This adjustment not only enables high sensitivity within a specific measurement range but also expands the measurable range. Moreover, to enhance the jamming effect, tetrapod-shaped particles, which exhibit the highest friction, were fabricated using 3D printing, significantly improving the measurement range. Additionally, four channels were strategically placed at the shell edges, within which materials with Young’s moduli higher than that of polydimethylsiloxane (PDMS) could be filled, allowing for an adjustable overall stiffness. When no vacuum pressure was applied, the whisker sensor filled with tetrapod particles was able to measure forces with a sensitivity of approximately 93 mm/N in the range of 0–70 mN. When a vacuum pressure of –50 kPa was applied, the sensor could measure forces with a sensitivity of around 82 mm/N in the range of 70–140 mN. Under a vacuum pressure of –100 kPa, the sensor could measure forces with a sensitivity of approximately 65 mm/N in the range of 140–220 mN. This innovation enables the selective expansion of the sensitivity and measurement range, which were previously difficult to achieve, showcasing new possibilities for jamming actuators and their potential use in exploration environments requiring a wide measurement range.[2024-0099]
{"title":"Whisker Sensor With Extended Measurement Range Through Jamming Effects Using 3D-Printed Tetrapod Particles","authors":"Woojun Jung;Seonghyeon Lee;Deyi Zheng;Muhammad Hilal;Yongha Hwang","doi":"10.1109/JMEMS.2024.3474010","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3474010","url":null,"abstract":"Whisker sensors, typically fabricated by casting soft polymers, have a measurement range determined by the mechanical properties of the soft polymer used, specifically, its Young’s modulus. Traditional whisker sensors have fixed stiffness after fabrication, which limits their measurement range. However, this study introduced a sensor that integrates a jamming actuator with a whisker sensor, allowing for adjustable stiffness. This adjustment not only enables high sensitivity within a specific measurement range but also expands the measurable range. Moreover, to enhance the jamming effect, tetrapod-shaped particles, which exhibit the highest friction, were fabricated using 3D printing, significantly improving the measurement range. Additionally, four channels were strategically placed at the shell edges, within which materials with Young’s moduli higher than that of polydimethylsiloxane (PDMS) could be filled, allowing for an adjustable overall stiffness. When no vacuum pressure was applied, the whisker sensor filled with tetrapod particles was able to measure forces with a sensitivity of approximately 93 mm/N in the range of 0–70 mN. When a vacuum pressure of –50 kPa was applied, the sensor could measure forces with a sensitivity of around 82 mm/N in the range of 70–140 mN. Under a vacuum pressure of –100 kPa, the sensor could measure forces with a sensitivity of approximately 65 mm/N in the range of 140–220 mN. This innovation enables the selective expansion of the sensitivity and measurement range, which were previously difficult to achieve, showcasing new possibilities for jamming actuators and their potential use in exploration environments requiring a wide measurement range.[2024-0099]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"758-766"},"PeriodicalIF":2.5,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, a high-performance micro-shell resonator gyroscope (MSRG) working on rate-integrating mode with virtual rotation modulation (VRM) is presented for the first time. To suppress the angle-dependent bias and improve the long-term accuracy of MSRG, its vibrating pattern is virtually set to rotate forward and backward periodically, which is called virtual rotation modulation. Combined with the self-calibration for the virtual rotating rate and the aniso-damping, the RMS error of the device output under VRM is reduced. The experimental results show the MSRG with VRM can achieve a long-term bias instability (BI) of $0.017~^{circ }$ /h, a wide measurement range of $pm 1200~^{circ }$ /s with the scale factor nonlinearity of 0.77 ppm, a bandwidth of 200 Hz and a resolution and threshold of $lt 0.004~^{circ }$ /s. [2024-0106]
{"title":"A 0.017 ∘/h Rate-Integrating Micro-Shell Resonator Gyroscope Using Virtual Rotation Modulation","authors":"Sheng Yu;Jiangkun Sun;Yongmeng Zhang;Kun Lu;Yan Shi;Xuezhong Wu;Dingbang Xiao","doi":"10.1109/JMEMS.2024.3474054","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3474054","url":null,"abstract":"In this letter, a high-performance micro-shell resonator gyroscope (MSRG) working on rate-integrating mode with virtual rotation modulation (VRM) is presented for the first time. To suppress the angle-dependent bias and improve the long-term accuracy of MSRG, its vibrating pattern is virtually set to rotate forward and backward periodically, which is called virtual rotation modulation. Combined with the self-calibration for the virtual rotating rate and the aniso-damping, the RMS error of the device output under VRM is reduced. The experimental results show the MSRG with VRM can achieve a long-term bias instability (BI) of \u0000<inline-formula> <tex-math>$0.017~^{circ }$ </tex-math></inline-formula>\u0000/h, a wide measurement range of \u0000<inline-formula> <tex-math>$pm 1200~^{circ }$ </tex-math></inline-formula>\u0000/s with the scale factor nonlinearity of 0.77 ppm, a bandwidth of 200 Hz and a resolution and threshold of \u0000<inline-formula> <tex-math>$lt 0.004~^{circ }$ </tex-math></inline-formula>\u0000/s. [2024-0106]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"657-659"},"PeriodicalIF":2.5,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-16DOI: 10.1109/JMEMS.2024.3463406
Vincent P. J. Chung;Xiaoliang Li;Metin G. Guney;Jeyanandh Paramesh;Tamal Mukherjee;Gary K. Fedder
This paper reports on the development of a monolithic capacitive accelerometer array system that has a designed full-scale range of $pm 5~{mathrm {text {k}{g} }}$ , a bandwidth larger than $10~{mathrm {text {k}text {Hz} }}$ , with a minimum resolution of $mathrm {5~text {m}{g} }$ and a minimum bias instability of $mathrm {700~mu {g} }$ . The resolution and full-scale range of the accelerometers correspond to a dynamic range of 120 dB that is on par with state-of-the-art low- $mathrm {{g} }$ accelerometers. High bandwidth and $mathrm {text {k}{g} }$ detectability are achieved by the nano-gram proof mass and relatively stiff folded-flexure transducer design. High dynamic range with $mathrm {text {k}{g} }$ input range is enabled by the hourglass-beam, interdigitated tapered comb-finger electrodes, and arrayed accelerometers. The accelerometer array design provides a potential path towards an emerging navigation through high-shock application.[2024-0091]
{"title":"Toward 120 dB CMOS-MEMS Arrayed Accelerometers Measuring Through kg Shock Events","authors":"Vincent P. J. Chung;Xiaoliang Li;Metin G. Guney;Jeyanandh Paramesh;Tamal Mukherjee;Gary K. Fedder","doi":"10.1109/JMEMS.2024.3463406","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3463406","url":null,"abstract":"This paper reports on the development of a monolithic capacitive accelerometer array system that has a designed full-scale range of \u0000<inline-formula> <tex-math>$pm 5~{mathrm {text {k}{g} }}$ </tex-math></inline-formula>\u0000, a bandwidth larger than \u0000<inline-formula> <tex-math>$10~{mathrm {text {k}text {Hz} }}$ </tex-math></inline-formula>\u0000, with a minimum resolution of \u0000<inline-formula> <tex-math>$mathrm {5~text {m}{g} }$ </tex-math></inline-formula>\u0000 and a minimum bias instability of \u0000<inline-formula> <tex-math>$mathrm {700~mu {g} }$ </tex-math></inline-formula>\u0000. The resolution and full-scale range of the accelerometers correspond to a dynamic range of 120 dB that is on par with state-of-the-art low-\u0000<inline-formula> <tex-math>$mathrm {{g} }$ </tex-math></inline-formula>\u0000 accelerometers. High bandwidth and \u0000<inline-formula> <tex-math>$mathrm {text {k}{g} }$ </tex-math></inline-formula>\u0000 detectability are achieved by the nano-gram proof mass and relatively stiff folded-flexure transducer design. High dynamic range with \u0000<inline-formula> <tex-math>$mathrm {text {k}{g} }$ </tex-math></inline-formula>\u0000 input range is enabled by the hourglass-beam, interdigitated tapered comb-finger electrodes, and arrayed accelerometers. The accelerometer array design provides a potential path towards an emerging navigation through high-shock application.[2024-0091]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"685-696"},"PeriodicalIF":2.5,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1109/JMEMS.2024.3472286
Philipp Moll;Georg Pfusterschmied;Sabine Schwarz;Werner Artner;Ulrich Schmid
In this paper, we demonstrate the deposition of 3C-SiC thin films on SiO2 using the alternating supply deposition (ASD) technique in a low-pressure chemical vapor deposition (LPCVD) furnace. We provide data of the thin film properties showing strong dependencies on the process gas flow rates of silane, propane and hydrogen. For comparative reasons all gas flow compositions were performed on <100> silicon and SiO2. A decreased rate of growth per cycle of ~37 % was discovered on SiO2. X-ray photoelectron spectroscopy (XPS) depth profiling revealed an oxygen content of 7.5 % ±2.5 % throughout the entire thin film when grown on SiO2. High resolution transmission electron microscopy (HRTEM) showed a 15 nm amorphous carbon layer at the 3C-SiC/Si interface. Conversely, on SiO2 a 10 nm graphite layer was determined as intermediate layer leading to prominent $lt 111gt 3$ C-SiC X-ray diffraction (XRD) peaks. Independent of the substrate type a similar microstructure is observed in cross-sectional analyses. Atomic force microscopy (AFM) surface roughness measurements showed for all SiO2 thin films lower values with a minimum of 4.9 nm (RMS), compared to 7 nm on Si. The electrical film resistivity was determined on SiO2 with CTLM analysis, depending on the process gas composition. The gained knowledge is beneficial for MEMS applications, where tailored 3C-SiC-on-SiO2 structures are desired.[2024-0114]
{"title":"Polycrystalline LPCVD 3C-SiC Thin Films on SiO₂ Using Alternating Supply Deposition","authors":"Philipp Moll;Georg Pfusterschmied;Sabine Schwarz;Werner Artner;Ulrich Schmid","doi":"10.1109/JMEMS.2024.3472286","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3472286","url":null,"abstract":"In this paper, we demonstrate the deposition of 3C-SiC thin films on SiO2 using the alternating supply deposition (ASD) technique in a low-pressure chemical vapor deposition (LPCVD) furnace. We provide data of the thin film properties showing strong dependencies on the process gas flow rates of silane, propane and hydrogen. For comparative reasons all gas flow compositions were performed on <100> silicon and SiO2. A decreased rate of growth per cycle of ~37 % was discovered on SiO2. X-ray photoelectron spectroscopy (XPS) depth profiling revealed an oxygen content of 7.5 % ±2.5 % throughout the entire thin film when grown on SiO2. High resolution transmission electron microscopy (HRTEM) showed a 15 nm amorphous carbon layer at the 3C-SiC/Si interface. Conversely, on SiO2 a 10 nm graphite layer was determined as intermediate layer leading to prominent \u0000<inline-formula> <tex-math>$lt 111gt 3$ </tex-math></inline-formula>\u0000C-SiC X-ray diffraction (XRD) peaks. Independent of the substrate type a similar microstructure is observed in cross-sectional analyses. Atomic force microscopy (AFM) surface roughness measurements showed for all SiO2 thin films lower values with a minimum of 4.9 nm (RMS), compared to 7 nm on Si. The electrical film resistivity was determined on SiO2 with CTLM analysis, depending on the process gas composition. The gained knowledge is beneficial for MEMS applications, where tailored 3C-SiC-on-SiO2 structures are desired.[2024-0114]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"767-775"},"PeriodicalIF":2.5,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10718720","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-15DOI: 10.1109/JMEMS.2024.3472615
Omar Barrera;Nishanth Ravi;Kapil Saha;Supratik Dasgupta;Joshua Campbell;Jack Kramer;Eugene Kwon;Tzu-Hsuan Hsu;Sinwoo Cho;Ian Anderson;Pietro Simeoni;Jue Hou;Matteo Rinaldi;Mark S. Goorsky;Ruochen Lu
This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient ( $k^{2}$ ) of 2.0%, high series quality factor ( $Q_{s}$ ) of 156, shunt quality factor ( $Q_{p}$ ) of 142, and maximum Bode quality factor ( $Q_{max}$ ) of 210. The third-order harmonics at 59.64 GHz is also observed with $k^{2}$ around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.[2024-0120]
{"title":"18 GHz Solidly Mounted Resonator in Scandium Aluminum Nitride on SiO₂/Ta₂O₅ Bragg Reflector","authors":"Omar Barrera;Nishanth Ravi;Kapil Saha;Supratik Dasgupta;Joshua Campbell;Jack Kramer;Eugene Kwon;Tzu-Hsuan Hsu;Sinwoo Cho;Ian Anderson;Pietro Simeoni;Jue Hou;Matteo Rinaldi;Mark S. Goorsky;Ruochen Lu","doi":"10.1109/JMEMS.2024.3472615","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3472615","url":null,"abstract":"This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient (\u0000<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>\u0000) of 2.0%, high series quality factor (\u0000<inline-formula> <tex-math>$Q_{s}$ </tex-math></inline-formula>\u0000) of 156, shunt quality factor (\u0000<inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula>\u0000) of 142, and maximum Bode quality factor (\u0000<inline-formula> <tex-math>$Q_{max}$ </tex-math></inline-formula>\u0000) of 210. The third-order harmonics at 59.64 GHz is also observed with \u0000<inline-formula> <tex-math>$k^{2}$ </tex-math></inline-formula>\u0000 around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.[2024-0120]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"711-716"},"PeriodicalIF":2.5,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-11DOI: 10.1109/JMEMS.2024.3469192
Guorong Wu;Xiaokang Chen
In this paper, the etching evolution law and surface morphology characteristics of sapphire hemispheres under different etchant concentration conditions are analyzed comprehensively in the light of the atomic structure and etching rates of sapphire. Firstly, etching rate distributions of the sapphire hemispheres at various concentration conditions (volume ratios of H2SO4 and H3PO4 are 1/1, 3/1 and 6/1) with the C-plane as the rotation center is obtained through etching experiments of sapphire hemispherical specimens, and etching evolutions of hemispheres are simulated and analyzed by applying the Level-Set method. It helps to design the etching time of the hemisphere reasonably. Then, the influence of etchant concentrations on the etching of hemispheres is analyzed on the basis of the characteristics of the etching rate distributions under different concentration conditions. Finally, the formation and the characteristic variability of hemispherical etching morphologies at various concentration conditions are analyzed in the light of the etching rates of planes and their atomic structures. It helps to improve the etching process of sapphire and the processing quality of etched structures of sapphire.[2024-0139]
{"title":"Etching Evolutions and Surface Morphologies of Sapphire Hemispheres Under Different Etchant Concentration Conditions","authors":"Guorong Wu;Xiaokang Chen","doi":"10.1109/JMEMS.2024.3469192","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3469192","url":null,"abstract":"In this paper, the etching evolution law and surface morphology characteristics of sapphire hemispheres under different etchant concentration conditions are analyzed comprehensively in the light of the atomic structure and etching rates of sapphire. Firstly, etching rate distributions of the sapphire hemispheres at various concentration conditions (volume ratios of H2SO4 and H3PO4 are 1/1, 3/1 and 6/1) with the C-plane as the rotation center is obtained through etching experiments of sapphire hemispherical specimens, and etching evolutions of hemispheres are simulated and analyzed by applying the Level-Set method. It helps to design the etching time of the hemisphere reasonably. Then, the influence of etchant concentrations on the etching of hemispheres is analyzed on the basis of the characteristics of the etching rate distributions under different concentration conditions. Finally, the formation and the characteristic variability of hemispherical etching morphologies at various concentration conditions are analyzed in the light of the etching rates of planes and their atomic structures. It helps to improve the etching process of sapphire and the processing quality of etched structures of sapphire.[2024-0139]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"785-792"},"PeriodicalIF":2.5,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents an analytical solution for the nonlinear dynamics of electrostatically driven MEMS scanning mirrors. These mirrors are widely used due to their small size, low cost, and low power consumption. However, nonlinearities in MEMS mirror’s amplitude-frequency response complicate control and design. Traditional numerical methods are time-consuming. This study uses a nonlinear approximation method and the averaging method to derive analytical solutions, improving design efficiency. Simulations and experiments validate these solutions, demonstrating good agreement for large amplitudes. The paper elucidates the origins of nonlinear phenomena such as threshold voltage, hysteresis in frequency response, and frequency shifts. An expression for the maximum vibration amplitude is derived, providing valuable insights for optimizing MEMS scanning mirrors. These findings provide a theoretical foundation for enhancing amplitude control, expediting the design process, and improving the performance of MEMS scanning mirrors.[2024-0128]
{"title":"Analytical Solution of Nonlinear Dynamics in Electrostatically Driven MEMS Scanning Mirrors","authors":"Changfeng Xia;Dayong Qiao;Anjie Peng;Zhen Chen;Xudong Song;Xiumin Song;Pengwen Xiong","doi":"10.1109/JMEMS.2024.3469274","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3469274","url":null,"abstract":"This paper presents an analytical solution for the nonlinear dynamics of electrostatically driven MEMS scanning mirrors. These mirrors are widely used due to their small size, low cost, and low power consumption. However, nonlinearities in MEMS mirror’s amplitude-frequency response complicate control and design. Traditional numerical methods are time-consuming. This study uses a nonlinear approximation method and the averaging method to derive analytical solutions, improving design efficiency. Simulations and experiments validate these solutions, demonstrating good agreement for large amplitudes. The paper elucidates the origins of nonlinear phenomena such as threshold voltage, hysteresis in frequency response, and frequency shifts. An expression for the maximum vibration amplitude is derived, providing valuable insights for optimizing MEMS scanning mirrors. These findings provide a theoretical foundation for enhancing amplitude control, expediting the design process, and improving the performance of MEMS scanning mirrors.[2024-0128]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"33 6","pages":"697-710"},"PeriodicalIF":2.5,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142761570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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