Pub Date : 2025-12-16DOI: 10.1109/JMEMS.2025.3641973
Alessandro Nastro
MEMS force sensors are used in a wide range of technical applications, spanning from industrial and biomedical to consumer and biological fields. Due to their widespread adoption in the market, significant efforts have been dedicated in researching and developing various transduction principles, sensing materials, and innovative mechanical designs. This review summarizes the most employed transduction principles for force sensing at the MEMS scale. Among these, electrostatic-capacitive MEMS force sensors are particularly well-suited for implementing closed-loop configurations, as they can integrate both capacitive sensing and electrostatic actuation within a single device thus keeping the system compact and favorably compatible with integrated circuit. Accordingly, this review focuses on the latest research in the literature on electrostatic-capacitive MEMS force sensors operating in both open-loop and closed-loop configurations. The working principles of both approaches are discussed, along with their respective advantages and disadvantages, and a comparison of state-of-the-art sensors in terms of resolution, sensitivity, and measurement range is provided. Finally, the review presents future perspectives, highlighting challenges and opportunities for MEMS force sensor development. The goal is to offer references that can aid in improving the design and performance of novel MEMS force sensors.[2025-0166]
{"title":"Electrostatic-Capacitive MEMS Force Sensors: A State-of-the-Art Review","authors":"Alessandro Nastro","doi":"10.1109/JMEMS.2025.3641973","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3641973","url":null,"abstract":"MEMS force sensors are used in a wide range of technical applications, spanning from industrial and biomedical to consumer and biological fields. Due to their widespread adoption in the market, significant efforts have been dedicated in researching and developing various transduction principles, sensing materials, and innovative mechanical designs. This review summarizes the most employed transduction principles for force sensing at the MEMS scale. Among these, electrostatic-capacitive MEMS force sensors are particularly well-suited for implementing closed-loop configurations, as they can integrate both capacitive sensing and electrostatic actuation within a single device thus keeping the system compact and favorably compatible with integrated circuit. Accordingly, this review focuses on the latest research in the literature on electrostatic-capacitive MEMS force sensors operating in both open-loop and closed-loop configurations. The working principles of both approaches are discussed, along with their respective advantages and disadvantages, and a comparison of state-of-the-art sensors in terms of resolution, sensitivity, and measurement range is provided. Finally, the review presents future perspectives, highlighting challenges and opportunities for MEMS force sensor development. The goal is to offer references that can aid in improving the design and performance of novel MEMS force sensors.[2025-0166]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"35 1","pages":"196-205"},"PeriodicalIF":3.1,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11301063","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146116883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-05DOI: 10.1109/JMEMS.2025.3640885
{"title":"2025 Index Journal of Microelectromechanical Systems","authors":"","doi":"10.1109/JMEMS.2025.3640885","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3640885","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"843-868"},"PeriodicalIF":3.1,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11281515","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145674857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-02DOI: 10.1109/JMEMS.2025.3633187
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3633187","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3633187","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"C2-C2"},"PeriodicalIF":3.1,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11272983","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We present a high-density silicon neural microelectrode array featuring a three-dimensional architecture that vertically separates metal interconnects from recording sites. This design decouples the signal acquisition and transmission layers, overcoming the spatial constraints of conventional coplanar layouts. With interconnect linewidth and spacing scaled to $1~mu $ m, the array integrates 256 recording channels within a 0.8 mm2 footprint, achieving a 41.8 % increase in channel density compared with coplanar counterparts. Circuit modeling shows that crosstalk between adjacent interconnects remains below $10~mu $ V, while thermal simulations confirm that the operational temperature rise stays within safe limits, ensuring stability for chronic in vivo recordings. We optimized the high-density bonding interface by eliminating the pre-bonding ball-stud process, which simplifies the flip-chip bonding workflow and reduces both manufacturing complexity and cost while improving device consistency. This interface design also enhances system scalability, enabling higher-throughput integration. A 10-week chronic recording experiment evaluated key performance metrics including spike amplitude, firing rate, and signal-to-noise ratio (SNR). Results demonstrated that high-quality spontaneous neural signals were stably recorded throughout the 10-week period, validating the electrode’s reliability for long-term chronic recording. These findings confirm that the high-density silicon-based MEA enables high-resolution, long-term stable neural recording with significant potential for brain-computer interface and neural engineering applications.[2025-0134]
{"title":"A High-Density Silicon-Based Microelectrode Array for Chronic In Vivo Neural Recording","authors":"Liang Geng;Yitao Wang;Wenxian Gu;Yujie Yang;Dongcheng Xie;Xuange Ma;Zhaoqin Chen;Lei Xu;Chengyu Li;Feng Wu","doi":"10.1109/JMEMS.2025.3621151","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3621151","url":null,"abstract":"We present a high-density silicon neural microelectrode array featuring a three-dimensional architecture that vertically separates metal interconnects from recording sites. This design decouples the signal acquisition and transmission layers, overcoming the spatial constraints of conventional coplanar layouts. With interconnect linewidth and spacing scaled to <inline-formula> <tex-math>$1~mu $ </tex-math></inline-formula>m, the array integrates 256 recording channels within a 0.8 mm<sup>2</sup> footprint, achieving a 41.8 % increase in channel density compared with coplanar counterparts. Circuit modeling shows that crosstalk between adjacent interconnects remains below <inline-formula> <tex-math>$10~mu $ </tex-math></inline-formula>V, while thermal simulations confirm that the operational temperature rise stays within safe limits, ensuring stability for chronic in vivo recordings. We optimized the high-density bonding interface by eliminating the pre-bonding ball-stud process, which simplifies the flip-chip bonding workflow and reduces both manufacturing complexity and cost while improving device consistency. This interface design also enhances system scalability, enabling higher-throughput integration. A 10-week chronic recording experiment evaluated key performance metrics including spike amplitude, firing rate, and signal-to-noise ratio (SNR). Results demonstrated that high-quality spontaneous neural signals were stably recorded throughout the 10-week period, validating the electrode’s reliability for long-term chronic recording. These findings confirm that the high-density silicon-based MEA enables high-resolution, long-term stable neural recording with significant potential for brain-computer interface and neural engineering applications.[2025-0134]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"811-823"},"PeriodicalIF":3.1,"publicationDate":"2025-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-16DOI: 10.1109/JMEMS.2025.3612313
I-Chieh Hsieh;Ting-Yi Chen;Chun-Pu Tsai;Hong-Sen Zheng;Wei-Chang Li
This paper presents a passive temperature compensation technique for CMOS-MEMS resonators, utilizing an arc-beam structure to induce temperature-dependent electrical stiffness. Implemented in a standard 0.35-$mu $ m 2-poly-4-metal CMOS-MEMS process, the method achieves significant improvement in frequency stability. Specifically, for a 2.08-MHz free-free beam (FF-beam) resonator, the first-order temperature coefficient of frequency (TCF1) is reduced from -88.56 ppm/°C to + 1.68 ppm/°C, and the overall frequency drift over the temperature range of 0°C to 90°C is lowered from 8236 ppm to 1985 ppm, a 4.15-fold improvement. A comprehensive theoretical model, validated by test keys, accurately predicts gap spacing and frequency behavior. Compared to previous electrical-stiffness-based compensation structures, the arc-beam design is more area-efficient, requires no additional fabrication steps, and is fully compatible with standard CMOS processes. This approach enables compact, power-efficient frequency stabilization and is readily applicable to a broad range of resonator topologies. [2025-0122]
{"title":"Temperature-Stable CMOS-MEMS Resonators via Arc-Beam-Induced Electrical Stiffness Tuning","authors":"I-Chieh Hsieh;Ting-Yi Chen;Chun-Pu Tsai;Hong-Sen Zheng;Wei-Chang Li","doi":"10.1109/JMEMS.2025.3612313","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3612313","url":null,"abstract":"This paper presents a passive temperature compensation technique for CMOS-MEMS resonators, utilizing an arc-beam structure to induce temperature-dependent electrical stiffness. Implemented in a standard 0.35-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m 2-poly-4-metal CMOS-MEMS process, the method achieves significant improvement in frequency stability. Specifically, for a 2.08-MHz free-free beam (FF-beam) resonator, the first-order temperature coefficient of frequency (TCF<sub>1</sub>) is reduced from -88.56 ppm/°C to + 1.68 ppm/°C, and the overall frequency drift over the temperature range of 0°C to 90°C is lowered from 8236 ppm to 1985 ppm, a 4.15-fold improvement. A comprehensive theoretical model, validated by test keys, accurately predicts gap spacing and frequency behavior. Compared to previous electrical-stiffness-based compensation structures, the arc-beam design is more area-efficient, requires no additional fabrication steps, and is fully compatible with standard CMOS processes. This approach enables compact, power-efficient frequency stabilization and is readily applicable to a broad range of resonator topologies. [2025-0122]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"795-801"},"PeriodicalIF":3.1,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper introduces a novel, model-based method for determining the non-orthogonality of MEMS gyroscopes in-field without requiring any motion or complex optimization. The presented approach utilizes axis-separated electrostatic excitation via quadrature electrodes and a coupled transfer function model, enabling accurate in-field identification. Experimental results from 12 MEMS gyroscope research devices demonstrate a high degree of accuracy, with a mean residual of only 0.011% and a one-sigma deviation of 0.034% in comparison to measurements on a high-precision rate table. This motionless method offers a significant advancement, paving the way for improved in-field calibration and enhanced non-orthogonality performance of MEMS gyroscopes. [2025-0133]
{"title":"In-Field Motionless Identification of the Non-Orthogonality of MEMS Gyroscopes","authors":"Wolfram Mayer;Burkhard Kuhlmann;Tobias Hiller;Thorsten Balslink;Lukas Blocher;André Zimmermann","doi":"10.1109/JMEMS.2025.3614306","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3614306","url":null,"abstract":"This paper introduces a novel, model-based method for determining the non-orthogonality of MEMS gyroscopes in-field without requiring any motion or complex optimization. The presented approach utilizes axis-separated electrostatic excitation via quadrature electrodes and a coupled transfer function model, enabling accurate in-field identification. Experimental results from 12 MEMS gyroscope research devices demonstrate a high degree of accuracy, with a mean residual of only 0.011% and a one-sigma deviation of 0.034% in comparison to measurements on a high-precision rate table. This motionless method offers a significant advancement, paving the way for improved in-field calibration and enhanced non-orthogonality performance of MEMS gyroscopes. [2025-0133]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"833-842"},"PeriodicalIF":3.1,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-16DOI: 10.1109/JMEMS.2025.3614903
Haikuan Chen;Xiaoyan Sun;Zhouwei He;Ji'an Duan;Youwang Hu
This study systematically investigates the effects of residual stress magnitude and distribution patterns on the vibration characteristics of hemispherical resonators (HSRs), with emphasis on the mechanisms through which residual stress influences resonant frequency and frequency splitting. First, a layered model incorporating residual stress was developed in COMSOL Multiphysics finite element software. Simulations analyzed the impact of residual stress on resonant frequency and frequency splitting. Second, an empirical model accounting for residual stress was established based on simulation results, fitting the relationship between resonant frequency and residual stress magnitude. Experimental validation of the model’s accuracy was subsequently conducted. To achieve controlled residual stress levels, alloy steel resonators were prepared. Different magnitudes of residual compressive stress were introduced by adjusting machining spindle speeds. Machining-induced stress was then eliminated through stress-relief annealing. Controlled residual compressive stress was subsequently introduced using shot peening with varied parameters. Experimental results demonstrate that residual stress significantly alters HSR vibration characteristics: tensile residual stress increases resonant frequency, while compressive residual stress decreases it. This work quantifies the correlation between residual stress and vibrational parameters, providing a foundation and methodology for compensating residual stress-induced measurement errors in gyroscopes and enhancing their overall performance.[2025-0126]
{"title":"Effects of Residual Stress on Vibrational Characteristics of Hemispherical Resonators","authors":"Haikuan Chen;Xiaoyan Sun;Zhouwei He;Ji'an Duan;Youwang Hu","doi":"10.1109/JMEMS.2025.3614903","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3614903","url":null,"abstract":"This study systematically investigates the effects of residual stress magnitude and distribution patterns on the vibration characteristics of hemispherical resonators (HSRs), with emphasis on the mechanisms through which residual stress influences resonant frequency and frequency splitting. First, a layered model incorporating residual stress was developed in COMSOL Multiphysics finite element software. Simulations analyzed the impact of residual stress on resonant frequency and frequency splitting. Second, an empirical model accounting for residual stress was established based on simulation results, fitting the relationship between resonant frequency and residual stress magnitude. Experimental validation of the model’s accuracy was subsequently conducted. To achieve controlled residual stress levels, alloy steel resonators were prepared. Different magnitudes of residual compressive stress were introduced by adjusting machining spindle speeds. Machining-induced stress was then eliminated through stress-relief annealing. Controlled residual compressive stress was subsequently introduced using shot peening with varied parameters. Experimental results demonstrate that residual stress significantly alters HSR vibration characteristics: tensile residual stress increases resonant frequency, while compressive residual stress decreases it. This work quantifies the correlation between residual stress and vibrational parameters, providing a foundation and methodology for compensating residual stress-induced measurement errors in gyroscopes and enhancing their overall performance.[2025-0126]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"824-832"},"PeriodicalIF":3.1,"publicationDate":"2025-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-15DOI: 10.1109/JMEMS.2025.3618898
Xiaoyi Gu;Yun Cao;Haipeng Xie;Xiaoyu Kong;Hengbo Zhu;Zhanwen Xi
This study investigates how element spacing affects the heat transfer and actuation performance of multi-array V-shaped electrothermal actuators (ETAs) in air environments. A visualization experimental platform combining infrared thermal imaging and high-speed microscopic imaging was established to analyze different element spacings under three conditions: identical maximum temperature, input voltage, and input power. Results revealed that smaller element spacings exhibit superior thermal efficiency, achieving higher temperatures and displacement outputs under identical conditions; while larger element spacings demonstrate faster dynamic response and more uniform temperature distribution. A validated multi-field coupling model integrating electrical, thermal, fluid, and structural domains extends the analysis across a broader range of spacings, revealing the underlying mechanisms governing heat accumulation and dissipation. The findings highlight the dual role of air as both a coupling medium and dissipation pathway, and provides valuable theoretical foundation and practical guidance for optimizing ETA design to address various working conditions.[2025-0113]
{"title":"Heat Transfer and Actuation Performance of Multi-Array V-Shaped MEMS Electrothermal Actuators in Air","authors":"Xiaoyi Gu;Yun Cao;Haipeng Xie;Xiaoyu Kong;Hengbo Zhu;Zhanwen Xi","doi":"10.1109/JMEMS.2025.3618898","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3618898","url":null,"abstract":"This study investigates how element spacing affects the heat transfer and actuation performance of multi-array V-shaped electrothermal actuators (ETAs) in air environments. A visualization experimental platform combining infrared thermal imaging and high-speed microscopic imaging was established to analyze different element spacings under three conditions: identical maximum temperature, input voltage, and input power. Results revealed that smaller element spacings exhibit superior thermal efficiency, achieving higher temperatures and displacement outputs under identical conditions; while larger element spacings demonstrate faster dynamic response and more uniform temperature distribution. A validated multi-field coupling model integrating electrical, thermal, fluid, and structural domains extends the analysis across a broader range of spacings, revealing the underlying mechanisms governing heat accumulation and dissipation. The findings highlight the dual role of air as both a coupling medium and dissipation pathway, and provides valuable theoretical foundation and practical guidance for optimizing ETA design to address various working conditions.[2025-0113]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"784-794"},"PeriodicalIF":3.1,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-10-02DOI: 10.1109/JMEMS.2025.3606255
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3606255","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3606255","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 5","pages":"C2-C2"},"PeriodicalIF":3.1,"publicationDate":"2025-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11190400","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145204546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Quasi-zero stiffness MEMS accelerometers can achieve high-resolution through enhanced sensitivity, but their dynamic range is typically limited. In this work, we propose a quasi-zero stiffness MEMS accelerometer with wide open-loop dynamic range, based on a novel electrothermally tunable stiffness mechanism. The mechanism consists of two identical curved beams with opposite curvature, and two identical folded beams, all connected in parallel to the proof mass. The curved beams are electrothermally heated to the buckling state, their negative stiffness cancels the positive stiffness of the folded beams, resulting in quasi-zero stiffness over a large linear displacement range at the as-fabricated position. The experimental results demonstrate that under a heating voltage of 7 V, the accelerometer sensitivity increases by 39.5 times (6.95 V/g), the noise floor decreases by 98.12% (510 ng/$surd $ Hz at 5 Hz), while maintaining an open-loop dynamic range of ±1 g. This work demonstrates promising results in improving the noise floor of MEMS accelerometers while maintaining a wide open-loop dynamic range, offering the potential for unprecedented performance.[2024-0217]
{"title":"A Quasi-Zero Stiffness MEMS Accelerometer With Wide Open-Loop Dynamic Range","authors":"Ruihong Xiong;Xuankai Xu;Yiwei Wang;Jiawei Li;Fang Chen;Tao Wu","doi":"10.1109/JMEMS.2025.3550535","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3550535","url":null,"abstract":"Quasi-zero stiffness MEMS accelerometers can achieve high-resolution through enhanced sensitivity, but their dynamic range is typically limited. In this work, we propose a quasi-zero stiffness MEMS accelerometer with wide open-loop dynamic range, based on a novel electrothermally tunable stiffness mechanism. The mechanism consists of two identical curved beams with opposite curvature, and two identical folded beams, all connected in parallel to the proof mass. The curved beams are electrothermally heated to the buckling state, their negative stiffness cancels the positive stiffness of the folded beams, resulting in quasi-zero stiffness over a large linear displacement range at the as-fabricated position. The experimental results demonstrate that under a heating voltage of 7 V, the accelerometer sensitivity increases by 39.5 times (6.95 V/g), the noise floor decreases by 98.12% (510 ng/<inline-formula> <tex-math>$surd $ </tex-math></inline-formula>Hz at 5 Hz), while maintaining an open-loop dynamic range of ±1 g. This work demonstrates promising results in improving the noise floor of MEMS accelerometers while maintaining a wide open-loop dynamic range, offering the potential for unprecedented performance.[2024-0217]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 6","pages":"721-729"},"PeriodicalIF":3.1,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145652178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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