Pub Date : 2025-04-08DOI: 10.1109/JMEMS.2025.3546836
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2025.3546836","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3546836","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10956169","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/JMEMS.2025.3528522
Yang Li;Jiawei Li;Tao Wu
This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-$mu $ m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection ($Gamma $ ) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (${f} _{c}$ ) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length ($L_{g}$ ) ranging from 50 to $300~mu $ m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB$cdot $ MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]
{"title":"Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers","authors":"Yang Li;Jiawei Li;Tao Wu","doi":"10.1109/JMEMS.2025.3528522","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3528522","url":null,"abstract":"This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection (<inline-formula> <tex-math>$Gamma $ </tex-math></inline-formula>) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (<inline-formula> <tex-math>${f} _{c}$ </tex-math></inline-formula>) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length (<inline-formula> <tex-math>$L_{g}$ </tex-math></inline-formula>) ranging from 50 to <inline-formula> <tex-math>$300~mu $ </tex-math></inline-formula>m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB<inline-formula> <tex-math>$cdot $ </tex-math></inline-formula>MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"194-203"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/JMEMS.2025.3542363
Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson
This work reports aluminum scandium nitride (Al$_{mathrm {1-x}}$ ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, $k_{t}^{2}$ , when compared to the more traditionally utilized LE and WE modes. The higher ${k} _{t}^{2}$ is due to the constructive addition of the $d_{31}$ and $d_{32}$ piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a $k_{t}^{2}$ of 14.1%, which was much larger than the $k_{t}^{2}$ of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high $Q_{p}$ of 1302 measured in air yielding a figure-of-merit (FOM $= k_{t}^{2}Q_{p}$ ) of 157. Based on the high $k_{t}^{2}$ and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]
{"title":"High Electromechanical Coupling Radial Extension Mode Resonators Realized in Al0.7Sc0.3N","authors":"Xu Zhao;Rossiny Beaucejour;Xingyu Du;Abhay Kochhar;Mojtaba Hodjat-Shamami;Craig Moe;Ramakrishna Vetury;Roy H. Olsson","doi":"10.1109/JMEMS.2025.3542363","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3542363","url":null,"abstract":"This work reports aluminum scandium nitride (Al<inline-formula> <tex-math>$_{mathrm {1-x}}$ </tex-math></inline-formula>ScxN/AlScN) (x =0.3/Al0.7Sc0.3N) Lamb wave resonators (LWR) operating in length extensional (LE), width extensional (WE), and radial extensional (RE) modes. COMSOL Multiphysics and experimental measurements show that the RE mode achieves a much higher electromechanical coupling, <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula>, when compared to the more traditionally utilized LE and WE modes. The higher <inline-formula> <tex-math>${k} _{t}^{2}$ </tex-math></inline-formula> is due to the constructive addition of the <inline-formula> <tex-math>$d_{31}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$d_{32}$ </tex-math></inline-formula> piezoelectric coefficients due to the RE mode shape. Experimentally, the RE mode resonator achieved a <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 14.1%, which was much larger than the <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> of 9.1% and 4.8% measured for the WE and LE mode devices fabricated on the same wafer. The RE mode achieves a high <inline-formula> <tex-math>$Q_{p}$ </tex-math></inline-formula> of 1302 measured in air yielding a figure-of-merit (FOM <inline-formula> <tex-math>$= k_{t}^{2}Q_{p}$ </tex-math></inline-formula>) of 157. Based on the high <inline-formula> <tex-math>$k_{t}^{2}$ </tex-math></inline-formula> and FOM, Al0.7Sc0.3N-based RE resonators show potential for applications in piezoelectric microelectromechanical filters and oscillators. [2024-0231]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"113-115"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-26DOI: 10.1109/JMEMS.2025.3541581
Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou
This paper investigates the dynamic characteristics of the mode-localized resonant accelerometer (ML-RXL) both in small-signal and large-signal models. The analytical model of ML-RXL bandwidth at various amplitude ratio (AR) operating points (OPs) was derived and validated through simulations and experiments. For the small-signal model, the OP with larger AR results in a further broadening of the ML-RXL’s bandwidth. Specifically, when AR is from 1 to 4, the effective bandwidth is expanded from 46Hz to 152Hz. For large-signal model, this study reveals the emergence of multiple harmonic peaks in the AR output response curve, which become more pronounced as the intensity of the dynamic acceleration signal increases at a given OP. The findings indicate that the bandwidth of ML-RXL is constrained by mode frequency difference and dynamic acceleration signal intensity, and it can be expanded by adjusting the operating point. [2024-0209]
{"title":"The Dynamic Characteristics of a Mode-Localized Resonant Accelerometer","authors":"Bowen Wang;Kunfeng Wang;Zhenxiang Qi;Zhaoyang Zhai;Zheng Wang;Xudong Zou","doi":"10.1109/JMEMS.2025.3541581","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3541581","url":null,"abstract":"This paper investigates the dynamic characteristics of the mode-localized resonant accelerometer (ML-RXL) both in small-signal and large-signal models. The analytical model of ML-RXL bandwidth at various amplitude ratio (AR) operating points (OPs) was derived and validated through simulations and experiments. For the small-signal model, the OP with larger AR results in a further broadening of the ML-RXL’s bandwidth. Specifically, when AR is from 1 to 4, the effective bandwidth is expanded from 46Hz to 152Hz. For large-signal model, this study reveals the emergence of multiple harmonic peaks in the AR output response curve, which become more pronounced as the intensity of the dynamic acceleration signal increases at a given OP. The findings indicate that the bandwidth of ML-RXL is constrained by mode frequency difference and dynamic acceleration signal intensity, and it can be expanded by adjusting the operating point. [2024-0209]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"222-230"},"PeriodicalIF":2.5,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]
{"title":"K-Band LiNbO₃ A3 Lamb-Wave Resonators With Through-Holes","authors":"Shu-Mao Wu;Hao Yan;Chen-Bei Hao;Zhen-Hui Qin;Si-Yuan Yu;Yan-Feng Chen","doi":"10.1109/JMEMS.2025.3540960","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540960","url":null,"abstract":"Addressing critical challenges in Lamb wave resonators, this paper presents the first validation of resonators incorporating through-holes. Using the A3 mode resonator based on a LiNbO3 single-crystal thin film and operating in the K band as a prominent example, we demonstrate the advantages of the through-hole design. In the absence of additional processing steps, and while maintaining device performance—including operating frequency, electromechanical coupling coefficient, and quality factor—without introducing extra spurious modes, this approach effectively reduces the ineffective suspension area of the piezoelectric LiNbO3 film, potentially enhancing mechanical and thermal stability. It also standardizes etching distances (and times) across various Lamb wave resonators on a single wafer, facilitating the development of Lamb wave filters. The versatility of the through-hole technique, with relaxed constraints on hole geometry and arrangement, further highlights its significance. Together with the other advantages, these features underscore the transformative potential of through-holes in advancing the practical implementation of Lamb wave resonators and filters. [2024-0155]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"164-173"},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-13DOI: 10.1109/JMEMS.2025.3540417
Xiaoyu Kong;Yun Cao;Shenghong Lei;Hengbo Zhu;Weirong Nie;Zhanwen Xi
Microelectrothermal actuators are widely used in various microelectromechanical systems (MEMS), but challenges related to energy consumption and response time persist, especially in energy-constrained systems. This paper presents an innovative approach to achieving low-energy consumption in microelectrothermal actuators through capacitive discharge excitation. A theoretical model is developed to analyze the actuator’s displacement, temperature, and response time as functions of applied voltage and capacitance. Experimental results validate the theoretical predictions, showing that with an applied voltage of 56 V and a capacitance of 0.1 mF, the actuator achieves a displacement of 160 $mu $ m within 7.65 ms, consuming only 0.157 J of energy. Compared to traditional constant voltage excitation (24 V), the proposed capacitive discharge excitation method reduces energy consumption by 21.1% and shortens the response time by 81.4%. Additionally, a matching strategy for selecting capacitors is proposed, considering the limitations of available capacitor specifications. The study highlights that higher applied voltage and lower capacitance lead to faster response times and reduced energy consumption, offering a promising solution for energy-efficient MEMS applications. [2024-0225]
{"title":"Low-Energy Consumption Actuation for Microelectrothermal Actuators via Capacitive Discharge Excitation","authors":"Xiaoyu Kong;Yun Cao;Shenghong Lei;Hengbo Zhu;Weirong Nie;Zhanwen Xi","doi":"10.1109/JMEMS.2025.3540417","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3540417","url":null,"abstract":"Microelectrothermal actuators are widely used in various microelectromechanical systems (MEMS), but challenges related to energy consumption and response time persist, especially in energy-constrained systems. This paper presents an innovative approach to achieving low-energy consumption in microelectrothermal actuators through capacitive discharge excitation. A theoretical model is developed to analyze the actuator’s displacement, temperature, and response time as functions of applied voltage and capacitance. Experimental results validate the theoretical predictions, showing that with an applied voltage of 56 V and a capacitance of 0.1 mF, the actuator achieves a displacement of 160 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m within 7.65 ms, consuming only 0.157 J of energy. Compared to traditional constant voltage excitation (24 V), the proposed capacitive discharge excitation method reduces energy consumption by 21.1% and shortens the response time by 81.4%. Additionally, a matching strategy for selecting capacitors is proposed, considering the limitations of available capacitor specifications. The study highlights that higher applied voltage and lower capacitance lead to faster response times and reduced energy consumption, offering a promising solution for energy-efficient MEMS applications. [2024-0225]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"184-193"},"PeriodicalIF":2.5,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Giant liposomes or giant vesicles have been used as dynamic bioreactors because of their ability to fuse with other vesicles to mix their contents. Among various principles, electrofusion is particularly useful because it is quick and does not require solution exchange. In conventional vesicle fusion methods, quantitative evaluation of fusion events has often been difficult because vesicles float and move due to the unexpected flow. In this study, we developed a microfluidic device equipped with microchambers for structural trapping and electrodes for vesicle fusion, in which the fusion phenomenon can be observed in definite locations. Specifically, we fabricated an electrofusion device that had conductive silicon electrodes and PDMS microchambers that held giant unilamellar vesicles (GUVs; diameter $gt 6~mu $ m) in place. The fusion yield of GUV-GUV and GUV-small GUV (diameter $lt 2~mu $ m) was examined by detecting the fluorescence marker that appeared upon the mixing of internal contents of two vesicle populations. This architecture can be used to realize parallel electrofusion assays for quantitatively analyzing biochemical reactions in the cell-mimetic environment. [2024-0166]
{"title":"Electrofusion Device With High-Aspect-Ratio Electrodes for the Controlled Fusion of Lipid Vesicles","authors":"Tsutomu Okita;Mamiko Tsugane;Kosuke Kato;Keisuke Shinohara;Hiroaki Suzuki","doi":"10.1109/JMEMS.2025.3530466","DOIUrl":"https://doi.org/10.1109/JMEMS.2025.3530466","url":null,"abstract":"Giant liposomes or giant vesicles have been used as dynamic bioreactors because of their ability to fuse with other vesicles to mix their contents. Among various principles, electrofusion is particularly useful because it is quick and does not require solution exchange. In conventional vesicle fusion methods, quantitative evaluation of fusion events has often been difficult because vesicles float and move due to the unexpected flow. In this study, we developed a microfluidic device equipped with microchambers for structural trapping and electrodes for vesicle fusion, in which the fusion phenomenon can be observed in definite locations. Specifically, we fabricated an electrofusion device that had conductive silicon electrodes and PDMS microchambers that held giant unilamellar vesicles (GUVs; diameter <inline-formula> <tex-math>$gt 6~mu $ </tex-math></inline-formula>m) in place. The fusion yield of GUV-GUV and GUV-small GUV (diameter <inline-formula> <tex-math>$lt 2~mu $ </tex-math></inline-formula>m) was examined by detecting the fluorescence marker that appeared upon the mixing of internal contents of two vesicle populations. This architecture can be used to realize parallel electrofusion assays for quantitatively analyzing biochemical reactions in the cell-mimetic environment. [2024-0166]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"174-183"},"PeriodicalIF":2.5,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143800754","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-02-04DOI: 10.1109/JMEMS.2024.3523667
{"title":"Journal of Microelectromechanical Systems Publication Information","authors":"","doi":"10.1109/JMEMS.2024.3523667","DOIUrl":"https://doi.org/10.1109/JMEMS.2024.3523667","url":null,"abstract":"","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 1","pages":"C2-C2"},"PeriodicalIF":2.5,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10870465","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143106763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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