Insight to structural, mechanical, electronic and optical properties of YSbPd and YSbPt half Heusles: an ab-initio investigation

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Optical and Quantum Electronics Pub Date : 2025-01-30 DOI:10.1007/s11082-024-08020-z
Junaid Khan, Dhan Raj Lawati, Ashim Dutta, Fahad N. Almutairi, Amel Ayari-Akkari
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Abstract

The structural, electronic, elastic, and optical properties of Half Heusler YSbPd and YSbPt were investigated with PBE and RPBE functions using GGA implemented with Density Functional Theory (DFT). Structural stability was verified using the Birch–Murnaghan equation of states for optimization. The obtained lattice parameters match previous literature data. The Elastic stability is computed the Elastic constants by using the Code version: 2024.03.15 (running on Python 3.11.2). Our results show that both compounds are ductile in nature. The Calculated the Band structures of half-Heusler YSbPd and YSbPt show direct band gaps of approximately 0.154 and 0.412 eV, respectively, which indicate a semiconducting nature. The Sb and Pd/Pt states are mainly responsible for the conduction state, as evidenced by the density of states (DOS) plot. Optical properties such as dielectric function, reflectivity, refractive index, conductivity, and loss function were investigated in the energy range of 0–10 eV. The maximum absorption and low loss indicate that YSbPd and YSbPt are potential candidates for optoelectronic device applications.

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YSbPd和YSbPt半荷荷斯的结构、机械、电子和光学性质:一项从头算研究
利用密度泛函理论(DFT)实现的GGA,利用PBE和RPBE函数研究了半Heusler YSbPd和YSbPt的结构、电子、弹性和光学性质。采用Birch-Murnaghan状态方程对结构稳定性进行了验证。得到的晶格参数与先前的文献数据相符。弹性稳定性通过使用代码版本:2024.03.15(在Python 3.11.2上运行)计算弹性常数。我们的结果表明,这两种化合物在本质上都是延展性的。半heusler制得的YSbPd和YSbPt的直接带隙分别约为0.154和0.412 eV,具有半导体性质。从态密度(DOS)图中可以看出,Sb态和Pd/Pt态是主要的导通态。在0-10 eV的能量范围内,研究了材料的介电函数、反射率、折射率、电导率和损耗函数等光学特性。最大吸收和低损耗表明YSbPd和YSbPt是光电器件应用的潜在候选者。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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