Growth of brucite (Mg(OH)2) on portlandite (Ca(OH)2)

IF 2 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2025-01-18 DOI:10.1016/j.jcrysgro.2025.128071
I. Galan , C. Baumann , M. Sakoparnig , C. Grengg , M. Dietzel
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Abstract

The potential protective effect of brucite (Mg(OH)2) grown on portlandite (Ca(OH)2) was analysed. Single crystals of portlandite were synthesized and exposed to Mg2+-containing solutions and the influence of the central parameters was analysed: (i) magnesium ion source (MgCl2 and MgSO4) (ii) initial Mg2+ concentration (0.01–1 mol/l), (iii) crystal surface to solution volume ratio, and (iv) duration of experiment. Solids and solutions were characterised by means of FTIR, ICP-OES, pH measurements, SEM and EPMA. Additionally, thermodynamic calculations were performed. The results showed that the morphology and thickness and thus the protective properties of the brucite layer were conditioned by the Mg2+ and Ca2+ concentration in the solution. Brucite layers grown during exposure to higher initial Mg2+ concentration were denser and thinner, offering better protection against further dissolution. In MgCl2 solutions, the precipitation of a compact brucite layer was accompanied by the formation of an empty cavity between brucite and portlandite. In MgSO4 solutions the space between brucite and portlandite was filled with gypsum as saturation conditions were reached providing extra protection but also leading to potential crack formation in the brucite layer.
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水镁石(Mg(OH)2)在硅酸盐(Ca(OH)2)上的生长
分析了水镁石(Mg(OH)2)对波特兰石(Ca(OH)2)的潜在保护作用。在含Mg2+溶液中合成了波特兰铁矿单晶,并分析了镁离子源(MgCl2和MgSO4)、初始Mg2+浓度(0.01-1 mol/l)、晶面与溶液体积比、实验时间等中心参数的影响。通过FTIR, ICP-OES, pH测量,SEM和EPMA对固体和溶液进行了表征。此外,还进行了热力学计算。结果表明,溶液中Mg2+和Ca2+的浓度决定了水镁石层的形态和厚度,从而决定了水镁石层的保护性能。在较高初始Mg2+浓度下生长的水镁石层密度更大、更薄,可以更好地防止进一步溶解。在MgCl2溶液中,水镁石致密层的析出伴随着水镁石与硅酸盐之间空腔的形成。在MgSO4溶液中,当达到饱和条件时,水镁石和波特兰岩之间的空间被石膏填充,这提供了额外的保护,但也导致水镁石层中潜在的裂缝形成。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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