Alexey F. Kardo-Sysoev , Maksim N. Cherenev , Alexander G. Lyublinsky , Shaira A. Yusupova , Elena I. Belyakova , Mikhail I. Vexler
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引用次数: 0
Abstract
A new method for the comprehensive characterization of the picosecond-range switching process in semiconductor structures biased with a high DC voltage and triggered by a fast-rise voltage pulse has been proposed. The delayed impact ionization and switching of a p+-n-n+ silicon diode structure with 500 μm thick base layer were investigated. Experiments demonstrated an improvement in the switching characteristics with an increase in both the DC reverse bias and the fast-rise steep pulse. A voltage rise rate of up to 43 kV/ns was recorded, which was formed by a single diode based switch.
期刊介绍：
Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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