High performance memristor device from solution processed MnO2 nanowires: Tuning of resistive switching from analog to digital and underlying mechanism

Rajkumar Mandal, Arka Mandal, Nayan Pandit, Rajib Nath, Biswanath Mukherjee
{"title":"High performance memristor device from solution processed MnO2 nanowires: Tuning of resistive switching from analog to digital and underlying mechanism","authors":"Rajkumar Mandal,&nbsp;Arka Mandal,&nbsp;Nayan Pandit,&nbsp;Rajib Nath,&nbsp;Biswanath Mukherjee","doi":"10.1016/j.memori.2024.100120","DOIUrl":null,"url":null,"abstract":"<div><div>This study reports the synthesis of manganese dioxide (MnO<sub>2</sub>) nanowires via the hydrothermal method and the fabrication of high-performance memristor devices using solution-processed MnO<sub>2</sub> nanowires. Microstructural characterizations, <em>viz</em>, XRD, SEM, EDAX and XPS of synthesized sample revealed highly crystalline structures of MnO<sub>2</sub> nanowires. As synthesized MnO<sub>2</sub> nanowires, mixed in different weight percentages with poly(methyl methacrylate) (PMMA) solution were deposited on Al electrode to form thin film memristor devices. Resistive switching with both analog and digital behaviors have been realized in Al/MnO<sub>2</sub>-PMMA/Al device by controlling the weight percentage (wt %) of MnO<sub>2</sub> in the composite. When the MnO<sub>2</sub> wt % in the composite was low (PMMA: MnO<sub>2</sub> = 1:1), the device exhibited analog type switching, while, the higher concentration of MnO<sub>2</sub> produced digital types of switching. The On/Off current ratio of the device increased gradually with increase in MnO<sub>2</sub> wt %, reaching the highest switching ratio, <em>ca.</em> 10<sup>6</sup> and excellent endurance (&gt;10<sup>4</sup> s) for PMMA:MnO<sub>2</sub> = 1:8. Temperature dependent charge transport behavior and impedance spectroscopy was further carried out to explain the underlying resistive switching mechanism of the device.</div></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"9 ","pages":"Article 100120"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Memories - Materials, Devices, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773064624000239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

This study reports the synthesis of manganese dioxide (MnO2) nanowires via the hydrothermal method and the fabrication of high-performance memristor devices using solution-processed MnO2 nanowires. Microstructural characterizations, viz, XRD, SEM, EDAX and XPS of synthesized sample revealed highly crystalline structures of MnO2 nanowires. As synthesized MnO2 nanowires, mixed in different weight percentages with poly(methyl methacrylate) (PMMA) solution were deposited on Al electrode to form thin film memristor devices. Resistive switching with both analog and digital behaviors have been realized in Al/MnO2-PMMA/Al device by controlling the weight percentage (wt %) of MnO2 in the composite. When the MnO2 wt % in the composite was low (PMMA: MnO2 = 1:1), the device exhibited analog type switching, while, the higher concentration of MnO2 produced digital types of switching. The On/Off current ratio of the device increased gradually with increase in MnO2 wt %, reaching the highest switching ratio, ca. 106 and excellent endurance (>104 s) for PMMA:MnO2 = 1:8. Temperature dependent charge transport behavior and impedance spectroscopy was further carried out to explain the underlying resistive switching mechanism of the device.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Development of an analog topology for a multi-layer neuronal network A graphene-based toxic detection approach Optimization of deep learning algorithms for large digital data processing using evolutionary neural networks The application of organic materials used in IC advanced packaging:A review Design and evaluation of clock-gating-based approximate multiplier for error-tolerant applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1