Evidence for localized trap formation during TADF OLED degradation

Abstract

Thermally activated delayed fluorescence (TADF) emitters attract interest as organic light-emitting diode (OLED) materials with potentially 100 % internal quantum efficiency (IQE). Their application in commercial displays is still hindered due to the not yet sufficient operational stability. We analyze the degradation mechanism in a TADF OLED by combining intermittent electro-optical characterization with device simulations. Evidence for the generation of trap states is found in capacitance-voltage (C-V) measurements. To explain both the C-V as well as the current-voltage and the capacitance-frequency evolution during prolonged operation times, at least two types of trap states are necessary. Device simulations are used to assess their location within the multilayer structure. It is found that both hole and electron traps at the HTL/EML interface can explain the experimental data. A quantitative comparison of simulations and experimental data reveal a hole and electron trap density of 8 ∙ 10¹⁸ cm⁻³ and 8 ∙ 10¹⁷ cm⁻³, respectively, at LT80 (the time at which the luminance has dropped to 80 % of its initial value). The main driver for the current efficiency decrease are the hole traps inside the HTL. The findings unravel the weak points in the TADF OLED and thereby guide further development to enhance device stability.