Organic Electronics最新文献

Two terminal artificial synaptic devices from self-assembled, crystalline thin film of an organic small molecule for neuromorphic applications 两个末端人工突触装置，由自组装的有机小分子晶体薄膜制成，用于神经形态学应用

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-12-02 DOI: 10.1016/j.orgel.2025.107364

Nayan Pandit, Rajkumar Mandal, Ankita Pal, Arka Mandal, Rajib Nath, Biswanath Mukherjee

Two-terminal memristors exhibiting voltage-induced resistive switching have emerged as potential device for neuromorphic computing. The simple device architecture with crossbar array pattern of such device is ideal for implementing various synaptic functions and adaptive learning. Herein, we have successfully fabricated organic memristor devices by utilizing self-assembled crystalline thin film of 7,7,8,8-tetracyanoquinodimethane (TCNQ) in ITO/TCNQ/Al configuration. The device exhibited reproducible resistive switching at bias < ± 3V with current On/Off ratio ∼10³ and switching time <2 ns. The memory retention characteristics of the device exceeded 10³ cycles with stable switching performances. Analysis of the charge transport mechanism of the device via fitting of I–V characteristics using established conduction models confirmed that trap-controlled space-charge limited current (SCLC) governs the switching behavior and underpins the bistable performance of the memory device. The devices demonstrate great promise for use as artificial synapses and in low-energy neuromorphic computation applications. Various biological synaptic functions, such as, LTP, LTD, PPF, SVDP, STDP and EPSC have been successfully emulated using this artificial synaptic device with energy consumption of 197 nJ.

具有电压感应电阻开关特性的双端忆阻器已成为神经形态计算的潜在器件。该器件结构简单，具有交叉棒阵列模式，是实现各种突触功能和自适应学习的理想器件。在此，我们成功地利用ITO/TCNQ/Al结构的7,7,8,8-四氰喹诺二甲烷（TCNQ）自组装晶体薄膜制备了有机忆阻器器件。该器件在偏置±3V下具有可重复性电阻开关，电流开/关比为103，开关时间为2ns。器件的记忆保持特性超过103个周期，开关性能稳定。利用已建立的传导模型，通过拟合I-V特性对器件的电荷输运机制进行了分析，证实了陷阱控制的空间电荷限制电流（SCLC）控制着开关行为，并支撑着存储器件的双稳态性能。该装置在人工突触和低能神经形态计算应用方面显示出巨大的前景。利用该人工突触装置成功模拟了LTP、LTD、PPF、SVDP、STDP和EPSC等多种生物突触功能，其能量消耗为197 nJ。

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引用次数: 0

Blue narrowband emission in aza-boron-diquinomethene complexes via steric engineering to reduce vibronic shoulder 利用空间位阻工程减少氮杂硼二醌配合物的蓝色窄带发射

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-11-24 DOI: 10.1016/j.orgel.2025.107359

Jinan Tang , Bichen Wang , Renyin Zhou , Baoping Lin , Yueming Sun , Guimin Zhao

Blue constitutes one of the three primary colors essential for full-color emission, rendering efficient and stable blue emitters indispensable for high-color-purity organic light-emitting diodes (OLEDs). Aza-boron-diquinomethene (aza-BODIQU) complexes are known to exhibit exceptionally narrow 0-0 emission as high-performance blue fluorescent emitters; however, their color purity is compromised by prominent 0–1 vibronic peaks. Herein, three aza-BODIQU derivatives Ph-BF, 3Ph-BF, and 4Ph-BF are designed to achieve narrowband emission by incorporating non-emissive steric hindrance groups, which effectively attenuate emission sideband and mitigate aggregation-induced spectral redshift and broadening. In solution, these emitters deliver emission peaks at 462, 463, 461 nm with full widths at half maximum (FWHM) as narrow as 12 nm and photoluminescence quantum yields (PLQYs) of 0.91, 0.92 and 0.94. In both non-sensitized and sensitized doped films, progressively bulkier substituents enhance resistance to concentration quenching, yielding markedly reduced redshifts at elevated doping concentrations. Leveraging dendritic thermally activated delayed fluorescence (TADF) sensitization, the resulting devices exhibit narrowband electroluminescence. With increasing steric bulk of the modifying groups, electroluminescence FWHM progressively narrows to 50, 46, and 22 nm, respectively. Correspondingly, maximum external quantum efficiencies (EQE_max) reach 0.7 %, 1.8 %, and 2.1 %, accompanied by peak power efficiencies of 0.7, 2.4, and 2.8 lm W⁻¹ and current efficiencies of 2.2, 5.8, and 6.8 cd A⁻¹.

蓝色是全彩发光所必需的三原色之一，高色纯度有机发光二极管（oled）必不可少的高效、稳定的蓝色发光体。已知aza-硼-二醌配合物（aza-BODIQU）作为高性能蓝色荧光发射器具有异常窄的0-0发射；然而，它们的颜色纯度受到明显的0-1振动峰的影响。本文设计了三种aza-BODIQU衍生物Ph-BF、3Ph-BF和4Ph-BF，通过加入非发射位阻基团实现窄带发射，有效地衰减了发射边带，减轻了聚集引起的光谱红移和展宽。在溶液中，这些发射体在462,463,461 nm处发射峰，半峰全宽（FWHM）窄至12 nm，光致发光量子产率（PLQYs）分别为0.91,0.92和0.94。在非敏化和敏化掺杂薄膜中，体积逐渐增大的取代基增强了对浓度猝灭的抵抗力，在高掺杂浓度下产生明显减少的红移。利用树突热激活延迟荧光（TADF）敏化，所得器件表现出窄带电致发光。随着修饰基团空间体积的增加，电致发光FWHM分别逐渐缩小到50、46和22 nm。相应地，最大外部量子效率（EQEmax）达到0.7%，1.8%和2.1%，峰值功率效率为0.7,2.4和2.8 lm W−1，电流效率为2.2,5.8和6.8 cd A−1。

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引用次数: 0

Machine learning-driven prediction of energy and band gap in FAPbI3 perovskite using diverse structural descriptors 使用不同结构描述符的FAPbI3钙钛矿能量和带隙的机器学习驱动预测

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-11-21 DOI: 10.1016/j.orgel.2025.107358

Xiaolu Chen , Yidong Zhao , Zihe Cao , Youqian Sun , Wenming Zhang , Yi Yang , Bing Zhang , Ji Liu , Zhenxi Zhang , Qiang Lu

Perovskite materials exhibit significant potential in optoelectronic applications, with system energy and band gap serving as critical metrics for evaluating material stability and optical characteristics. To accelerate the development of high-performance perovskite materials, this study establishes an efficient structure-property prediction framework through machine learning approaches. Artificial neural network (ANN) potential models and random forest (RF) models were established using Gaussian-type structure descriptors (GTSD) and power-type structural descriptors (PTSD) as feature inputs, based on a comprehensive dataset of 1000 FAPbI₃ configurations with corresponding system energies and band gap values. The RF-based feature selection method was subsequently employed to identify key structural descriptors governing the energy landscape and electronic properties of FAPbI₃. Furthermore, the predictive robustness of neural networks across datasets with varying structural perturbations was systematically investigated, revealing critical insights into model generalization capabilities. This computational framework demonstrates high-precision prediction of structure-property relationships while providing mechanistic interpretation of dominant structural factors, thereby offering valuable guidance for rational design of perovskite materials.

钙钛矿材料在光电应用中表现出巨大的潜力，系统能量和带隙是评估材料稳定性和光学特性的关键指标。为了加速高性能钙钛矿材料的开发，本研究通过机器学习方法建立了一个有效的结构-性能预测框架。基于具有相应系统能量和带隙值的1000个FAPbI3配置的综合数据集，以高斯型结构描述符（GTSD）和功率型结构描述符（PTSD）作为特征输入，建立了人工神经网络（ANN）电位模型和随机森林（RF）模型。随后采用基于射频的特征选择方法来识别控制FAPbI3能量景观和电子特性的关键结构描述符。此外，系统地研究了神经网络在不同结构扰动数据集上的预测鲁棒性，揭示了模型泛化能力的关键见解。该计算框架对结构-性能关系进行了高精度预测，同时对主要结构因素进行了机理解释，从而为钙钛矿材料的合理设计提供了有价值的指导。

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引用次数: 0

Impact of buffer layer thickness on the performance of metal halide perovskite memristors 缓冲层厚度对金属卤化物钙钛矿记忆电阻器性能的影响

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-11-11 DOI: 10.1016/j.orgel.2025.107356

José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero

Perovskite-based memristors have emerged as promising devices for information storage and processing due to their resistive switching properties. In this study, nonvolatile resistive switching memory devices based on metal halide perovskite with structure FTO/methylammonium lead iodide (MAPbI₃)/polymethyl methacrylate (PMMA)/Ag are presented. The influence of buffer layer thickness (PMMA) variations at 30 nm, 50 nm, and 70 nm on device performance is evaluated. Experimental results show that key device parameters such as SET voltage, ON/OFF ratio, endurance and retention time are significantly affected by changes in the buffer layer thickness. Our findings show that an optimum thickness of 50 nm improves the stability and performance of the device, with ultra-high ON/OFF ratios (10⁶), record endurances (>3·10⁴ cycles) and a record retention time (>5·10⁵ s). AC characterization has also been carried out to gain a deeper understanding of the physical mechanisms governing the device. Finally, numerical simulations are carried out to understand the role of the electric field in the formation and rupture of conductive filaments within both the perovskite and buffer layers in devices with different buffer layer thicknesses.

钙钛矿基忆阻器由于其电阻开关特性而成为信息存储和处理的有前途的器件。本研究提出了一种基于FTO/甲基碘化铅(MAPbI3)/聚甲基丙烯酸甲酯(PMMA)/Ag结构的金属卤化物钙钛矿非易失性电阻开关存储器件。评估了缓冲层厚度（PMMA）在30 nm、50 nm和70 nm下的变化对器件性能的影响。实验结果表明，缓冲层厚度的变化对SET电压、ON/OFF比、续航时间和保持时间等关键器件参数有显著影响。我们的研究结果表明，50nm的最佳厚度提高了器件的稳定性和性能，具有超高的开/关比（106），创纪录的续航时间（>； 3.104循环）和创纪录的保持时间（> 5.105 s）。还进行了交流表征，以更深入地了解控制器件的物理机制。最后，通过数值模拟了解了电场对不同缓冲层厚度器件中钙钛矿层和缓冲层内导电丝形成和断裂的影响。

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引用次数: 0

Preparation of TiO2 film using a novel high-bias pulsed FCVA for flexible OLED film encapsulation 柔性OLED薄膜封装用新型高偏置脉冲FCVA制备TiO2薄膜

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-11-10 DOI: 10.1016/j.orgel.2025.107357

Qian Li , Zeyu Yin , Sen Chen , Qingyan Hou , Pan Pang , Yifan Zhang , Shouzheng Jiao , Lin Chen

Encapsulation is crucial for protecting organic light-emitting diodes (OLEDs) from the effects of water vapor and oxygen in the air, and extending their lifespan. This study reports the use of TiO₂ films grown based on filtering cathode vacuum arc (FCVA) technology for flexible OLED device packaging. To ensure the bending service life of flexible OLED devices, high pulse bias is applied, and low stress, high density TiO₂ thin films are prepared at room temperature through a deposition mode of short-term high-energy ion bombardment and long-term relaxation. The results showed that the stress of the film significantly decreased to −89 MPa after applying a bias voltage. Under the conditions of 85 °C and 85 % relative humidity, the water vapor transmission rate (WVTR) of TiO₂/PEN samples prepared under 7 kV negative bias was 6.23 × 10⁻³ g/m²/day after bending experiment, which was two order of magnitude lower than the samples prepared without negative bias. In addition, brightness tests on packaged devices have shown that OLED devices packaged with TiO₂ films have an extended lifespan of approximately 0.8 times.

封装对于保护有机发光二极管（oled）免受空气中水蒸气和氧气的影响并延长其使用寿命至关重要。本研究报告了基于滤波阴极真空电弧（FCVA）技术生长的TiO2薄膜用于柔性OLED器件封装的应用。为了保证柔性OLED器件的弯曲使用寿命，采用高脉冲偏置，通过短期高能离子轰击和长期弛豫的沉积方式，在室温下制备低应力、高密度的TiO2薄膜。结果表明，施加偏置电压后，薄膜的应力显著降低至- 89 MPa。在85℃、85%相对湿度条件下，7 kV负偏置条件下制备的TiO2/PEN样品在弯曲实验后的水蒸气透过率（WVTR）为6.23 × 10−3 g/m2/day，比无负偏置条件下制备的样品降低了两个数量级。此外，对封装器件的亮度测试表明，用TiO2薄膜封装的OLED器件的寿命延长了约0.8倍。

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引用次数: 0

Reproducible high-efficiency and color stable single-emitting-layer cold WOLEDs based on inhibition of energy transfer and efficient exciton harvesting 基于抑制能量传递和高效激子收集的可重复、高效、色稳定的单发射层冷WOLEDs

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-11-03 DOI: 10.1016/j.orgel.2025.107355

Jinming Li , Yangkai Zhao , Linyi Song , Yujian Liu , Xuankang Zhang , Baoxiu Mi , Qi Wei , Quli Fan , Yan Qian

Traditional white organic light-emitting diodes (WOLEDs) often rely on mechanism of incomplete energy transfer, which generally necessitate extremely low doping concentrations for low-energy emitters. This poses significant challenges in device fabrication reproducibility and color coordinate consistency. In this work, we developed a hot exciton yellow-emitting excited state intramolecular proton transfer (ESIPT) fluorophore, T4AC, featuring a large Stokes shift. The material achieves a high exciton utilization efficiency of up to 88.8 %, via high-energy-level reverse intersystem crossing (hRISC). By co-doping T4AC with a thermally activated delayed fluorescence (TADF) blue emitter, DMAc-MPM, we realized highly efficient and reproducible bluish WOLEDs employing a single emitting layer with complementary-color emissions. Minimal spectral overlap effectively suppressed energy transfer, thus ensuring independent triplet harvesting via hot exciton mechanism in T4AC and the TADF process in DMAc-MPM, respectively. The resulting device exhibits color stable and high-efficiency cold white emission, achieving maximum external quantum efficiency (EQE) of 11.50 % and current efficiency (CE) of 27.74 cd A⁻¹. More importantly, these bluish WOLEDs demonstrated excellent reproducibility across multiple batches, with small EQE variations within 11.15 % ± 0.62 % and CIE coordinate fluctuations confined to a narrow range of (0.181 ± 0.004, 0.351 ± 0.030). This study presents a viable strategy for the development of simple-structured, highly efficient, and reproducibly fabricated cold WOLEDs.

传统的白光有机发光二极管（WOLEDs）通常依赖于不完全能量转移机制，这通常需要极低的掺杂浓度来实现低能发射体。这对器件制造的再现性和颜色坐标一致性提出了重大挑战。在这项工作中，我们开发了一种热激子黄色发射激发态分子内质子转移（ESIPT）荧光团，T4AC，具有大的斯托克斯位移。该材料通过高能反向系统间交叉（hRISC）实现了高达88.8%的激子利用效率。通过将T4AC与热激活延迟荧光（TADF）蓝色发射器DMAc-MPM共掺杂，我们实现了具有互补色发射的单发射层高效可重复的蓝色WOLEDs。最小的光谱重叠有效地抑制了能量转移，从而保证了T4AC中的热激子机制和DMAc-MPM中的TADF过程分别通过独立的三重态收获。该器件具有色稳定、高效的冷白光发射特性，最大外量子效率（EQE）为11.50%，电流效率（CE）为27.74 cd A−1。更重要的是，这些带蓝色的WOLEDs在多个批次中具有出色的再现性，EQE变化在11.15%±0.62%以内，CIE坐标波动在0.181±0.004,0.351±0.030的狭窄范围内。本研究为开发结构简单、高效、可重复制造的冷WOLEDs提供了一种可行的策略。

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引用次数: 0

Dual-oxide WO3-Based ETLs for enhanced charge transport and stability in CsPbIBr2 perovskite solar cells 基于wo3的双氧化物ETLs增强CsPbIBr2钙钛矿太阳能电池的电荷输运和稳定性

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-30 DOI: 10.1016/j.orgel.2025.107354

Ali Mujtaba , M.I. Khan , Mongi Amami , Badriah S. Almutairi , Shahbaz Ahmed Khan

This study is significant for introducing WO₃-based composite ETLs (ZrO₂-WO₃ and SnO₂-WO₃) that synergistically enhance charge transport, reduce recombination, and improve stability in CsPbIBr₂ perovskite solar cells. The novelty lies in the dual-oxide approach, which leverages the complementary structural and electronic properties of WO₃ with ZrO₂ and SnO₂ to achieve higher device efficiency. X-ray diffraction (XRD) analysis confirmed the successful integration of WO₃-based films, with calculated crystallite sizes of 36.5 nm for ZrO₂-WO₃ and 41.8 nm for SnO₂-WO₃, indicating improved crystallinity for the SnO₂-based film. Scanning electron microscope (SEM) showed that SnO₂-WO₃ film exhibits a smoother, more uniform morphology with smaller grain sizes compared to the ZrO₂-WO₃ film. Raman spectroscopy validated the phase purity and chemical stability of the prepared films. SEM morphology showed the reduced average grain size for SnO₂-WO₃ film. UV–Vis (UV–vis) spectroscopy revealed reduced band gaps of 2.71 eV and 2.69 eV for ZrO₂-WO₃ and SnO₂-WO₃, respectively, favoring efficient charge transport. Photoluminescence (PL) measurements demonstrated enhanced charge carrier separation. Current-density voltage (J-V) characteristics showed a higher power conversion efficiency of 9.35 % for SnO₂-WO₃ compared to 8.26 % for ZrO₂-WO₃. Electrochemical impedance spectroscopy (EIS) revealed reduced charge transfer resistance and increased recombination resistance (1769 Ω) for SnO₂-WO₃-based devices. These findings highlight the potential of WO₃-based ETLs in PSCs for future high-efficiency photovoltaic applications.

该研究对于引入基于wo3的复合etl （ZrO2-WO3和SnO2-WO3）具有重要意义，它们可以协同增强CsPbIBr2钙钛矿太阳能电池中的电荷输运，减少重组，提高稳定性。新颖之处在于双氧化物方法，它利用WO3与ZrO2和SnO2互补的结构和电子特性来实现更高的器件效率。x射线衍射（XRD）分析证实了wo3基薄膜的成功集成，计算出ZrO2-WO3的晶粒尺寸为36.5 nm， SnO2-WO3的晶粒尺寸为41.8 nm，表明sno2基薄膜的结晶度得到了提高。扫描电镜（SEM）结果表明，与ZrO2-WO3膜相比，SnO2-WO3膜形貌更光滑、均匀，晶粒尺寸更小。拉曼光谱验证了所制备薄膜的相纯度和化学稳定性。SEM形貌显示SnO2-WO3薄膜的平均晶粒尺寸减小。紫外可见光谱显示，ZrO2-WO3和SnO2-WO3的带隙分别减小了2.71 eV和2.69 eV，有利于有效的电荷输运。光致发光（PL）测量表明，电荷载流子分离增强。电流密度电压（J-V）特性表明，SnO2-WO3的功率转换效率为9.35%，而ZrO2-WO3的功率转换效率为8.26%。电化学阻抗谱（EIS）显示，sno2 - wo3基器件的电荷转移电阻降低，复合电阻增加（1769 Ω）。这些发现突出了基于wo3的etl在psc中未来高效光伏应用的潜力。

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引用次数: 0

Solution-processable pyridine-flanked DPP copolymers for n-type organic field-effect transistors 用于n型有机场效应晶体管的可溶液加工吡啶侧链DPP共聚物

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-29 DOI: 10.1016/j.orgel.2025.107353

Yejin Ahn , Dong Uk Lee , Yu Rim Kang , Hyojin Kye , Bong-Gi Kim , YeongKwon Kang

Organic field-effect transistors (OFETs) have been extensively studied, yet achieving reproducible n-type transport remains a persistent challenge. Here, we report two pyridine-flanked diketopyrrolopyrrole (DPP) copolymers, 5-PDppPy-S and 5-PDppPy-Se, designed to probe the influence of chalcogen substitution on electron transport. Both polymers exhibit good solubility in common organic solvents and high thermal stability with 5 % weight loss above 390 °C. Thin-film devices with a bottom-gate, top-contact architecture showed clear n-channel operation, with electron mobilities of 1.0 × 10⁻³ cm² V⁻¹ s⁻¹ for 5-PDppPy-S and 1.7 × 10⁻³ cm² V⁻¹ s⁻¹ for 5-PDppPy-Se. A brief thermal annealing step at 200 °C for 10 min further improved charge transport, yielding mobilities of 1.7 × 10⁻³ and 3.1 × 10⁻³ cm² V⁻¹ s⁻¹, respectively. Atomic force microscopy (AFM) revealed increased surface roughness and domain growth upon annealing, consistent with enhanced molecular ordering. These findings establish a direct comparison of sulfur and selenium substitution in pyridine-flanked DPP polymers and highlight the role of simple post-processing in achieving stable n-type transport, offering insights for the molecular design of solution-processable OFET materials.

有机场效应晶体管（ofet）已经得到了广泛的研究，但实现可重复的n型输运仍然是一个持续的挑战。在这里，我们报道了两个吡啶侧双酮吡咯（DPP）共聚物，5-PDppPy-S和5-PDppPy-Se，旨在探讨碳取代对电子传递的影响。这两种聚合物在普通有机溶剂中具有良好的溶解性和高的热稳定性，在390°C以上失重5%。具有底栅顶接触结构的薄膜器件显示出清晰的n通道运行，5-PDppPy-S的电子迁移率为1.0 × 10−3 cm2 V−1 s−1,5-PDppPy-Se的电子迁移率为1.7 × 10−3 cm2 V−1 s−1。在200°C下进行10分钟的短暂热退火步骤进一步改善了电荷输运，迁移率分别为1.7 × 10−3和3.1 × 10−3 cm2 V−1 s−1。原子力显微镜（AFM）显示退火后表面粗糙度和区域生长增加，与增强的分子有序一致。这些发现建立了硫取代和硒取代在吡啶侧链DPP聚合物中的直接比较，并强调了简单后处理在实现稳定n型传输中的作用，为溶液可加工OFET材料的分子设计提供了见解。

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引用次数: 0

Improving performance of quantum dot light-emitting diodes through PMA-doped PEDOT:PSS hole injection layer pma掺杂PEDOT:PSS空穴注入层改善量子点发光二极管性能

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-25 DOI: 10.1016/j.orgel.2025.107350

Eunyong Seo , Jeong Ha Hwang , Sinhui Min , Juwan Lee , Heeeun Kang , Seog Geun Kang , Donggu Lee

Colloidal quantum dot-based light-emitting diodes (QLEDs) have attracted significant attention owing to their facile solution processability and excellent optical properties, making them promising candidates for developing next-generation display technologies. However, their practical application remains limited due to inefficient hole injection, which remains a significant challenge in achieving high stability and commercial viability for solution-processed QLEDs. This work introduces a hybrid hole injection layer (HIL) to realize efficient solution-processed QLEDs. The designed HIL consists of a conductive polymer poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), doped with inorganic additive phosphomolybdic acid. In this design, the anode-HIL interface, engineered by the hybrid HIL, enhanced the hole injections, leading to improved device performance. The optimized hybrid-HIL-based QLEDs displayed a maximum external quantum efficiency of 9.84 % and a power efficiency of 11.55 lm/W, exhibiting a significant improvement compared to conventional PEDOT:PSS-based devices. These results confirmed that the solution-processable hybrid HIL provides a promising alternative for realizing high-performance, solution-processed QLEDs.

胶体量子点发光二极管（qled）由于其易于溶液处理和优异的光学性能而引起了人们的广泛关注，使其成为开发下一代显示技术的有希望的候选者。然而，由于低效的孔注入，它们的实际应用仍然受到限制，这对于实现溶液处理qled的高稳定性和商业可行性仍然是一个重大挑战。本文介绍了一种混合空穴注入层（HIL）来实现高效的溶液处理qled。所设计的HIL由导电聚合物聚（3,4-乙烯二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS），掺杂无机添加剂磷酸钼酸组成。在该设计中，采用混合HIL设计的阳极-HIL界面增强了井眼注入，从而提高了设备性能。与传统的PEDOT: pss器件相比，优化后的基于混合hil的qled的最大外量子效率为9.84%，功率效率为11.55 lm/W。这些结果证实，溶液可加工的混合HIL为实现高性能、溶液处理的qled提供了一个有前途的替代方案。

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引用次数: 0

Highly efficient white organic light-emitting diodes with low efficiency roll-off based on novel exciplex host 基于新型激复体的低滚降高效白光有机发光二极管

IF 2.6 4区工程技术 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Organic Electronics

Pub Date : 2025-10-22 DOI: 10.1016/j.orgel.2025.107352

Fankang Kong , Qingxiang Wang , Yongan Zhang , Jun Sun , Jintao Wang , Liping Yang , Ren Sheng , Ping Chen

The exciplex-host system represents an effective strategy for achieving efficient white organic light-emitting diodes (WOLEDs). Herein, a novel exciplex system constructed by 26DCzPPy and SFTRZ is demonstrated to fabricate efficient WOLEDs. As a result, the blue and orange devices show maximum external quantum efficiency (EQE) of 19.3 % and 25.3 %. By further regulating charge transport behavior in the emission layer, the optimizing white OLED (WOLED) achieves the highest power efficiency of 58.3 lm/W and a low CE roll-off of 8.6 %. This superior performance can be attributed to efficient Förster resonance energy transfer from host to guest and balanced charge transport in the device. This result provides an effective approach for achieving simple, high-performance OLEDs for solid-state lighting.

该系统是实现高效白光有机发光二极管（WOLEDs）的有效策略。本文证明了一种由26DCzPPy和SFTRZ构成的新型杂合体系可以制造高效的WOLEDs。结果显示，蓝色和橙色器件的最大外部量子效率（EQE）分别为19.3%和25.3%。通过进一步调节发射层中的电荷输运行为，优化后的白色OLED （WOLED）实现了58.3 lm/W的最高功率效率和8.6%的低CE滚降。这种优异的性能可归因于有效的Förster共振能量从主客体转移和平衡电荷在器件中的传输。这一结果为实现用于固态照明的简单、高性能oled提供了有效的方法。

引用次数: 0