Low-temperature ZnOx (ALD)/SiO2 (spin-coating) dopant-free electron-selective contact enabling 22.11%-efficiency Si solar cell

IF 6.3 2区 材料科学 Q2 ENERGY & FUELS Solar Energy Materials and Solar Cells Pub Date : 2025-01-08 DOI:10.1016/j.solmat.2025.113403
Jiawang Qiu , Ying Zhang , Zhongguo Zhou , Xi Lin , Xiaomin Song , Sihua Zhong , Haipeng Yin , Xiulin Jiang , Junbing Zhang , Zi Ouyang , Wenzhong Shen , Zengguang Huang
{"title":"Low-temperature ZnOx (ALD)/SiO2 (spin-coating) dopant-free electron-selective contact enabling 22.11%-efficiency Si solar cell","authors":"Jiawang Qiu ,&nbsp;Ying Zhang ,&nbsp;Zhongguo Zhou ,&nbsp;Xi Lin ,&nbsp;Xiaomin Song ,&nbsp;Sihua Zhong ,&nbsp;Haipeng Yin ,&nbsp;Xiulin Jiang ,&nbsp;Junbing Zhang ,&nbsp;Zi Ouyang ,&nbsp;Wenzhong Shen ,&nbsp;Zengguang Huang","doi":"10.1016/j.solmat.2025.113403","DOIUrl":null,"url":null,"abstract":"<div><div>In recent years, there has been a concerted effort to develop new electron-selective (ES) materials for crystalline silicon (c-Si) solar cells aimed at simplifying the processes and improving efficiencies. By combing the low-temperature spin-coating SiO<sub>2</sub> with the atomic layer deposition (ALD) ZnO<sub>x</sub>, we in this work prepared the dopant-free ES contact of ALD-ZnO<sub>x</sub>/Spin-coating SiO<sub>2</sub>/LiF/Al and applied it to n-type c-Si solar cells as a full-area rear contact. It is found that the optimal ZnO<sub>x</sub>/SiO<sub>2</sub>/LiF/Al sample with the 10 cycles-thickness ZnO<sub>x</sub>, has the lowest contact resistivity (<em>ρ</em><sub><em>c</em></sub>) of 0.857 mΩ cm<sup>2</sup> and the high minority carrier lifetime (<em>τ</em><sub><em>eff</em></sub>) of 319.43 μs, indicating the simultaneous achievement of the excellent contact performance and surface passivation. It is verified that the spin-coating SiO<sub>2</sub> layer can boost the surface passivation level while maintaining the low <em>ρ</em><sub><em>c</em></sub> due to the pinhole-like carrier transport mechanism in spin-coating SiO<sub>2</sub>. Finally, the champion efficiency of 22.11 % was achieved in the n-type c-Si solar cell with full-area rear ZnO<sub>x</sub>/SiO<sub>2</sub>/LiF/Al ES dopant-free contact. This represents the best performance for ZnO<sub>x</sub>-based dopant-free c-Si solar cells, displaying a bright prospect of this ES contact in the low-temperature and high-efficiency Si heterojunction and Si/Perovskite tandem solar cells.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"282 ","pages":"Article 113403"},"PeriodicalIF":6.3000,"publicationDate":"2025-01-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024825000042","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
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Abstract

In recent years, there has been a concerted effort to develop new electron-selective (ES) materials for crystalline silicon (c-Si) solar cells aimed at simplifying the processes and improving efficiencies. By combing the low-temperature spin-coating SiO2 with the atomic layer deposition (ALD) ZnOx, we in this work prepared the dopant-free ES contact of ALD-ZnOx/Spin-coating SiO2/LiF/Al and applied it to n-type c-Si solar cells as a full-area rear contact. It is found that the optimal ZnOx/SiO2/LiF/Al sample with the 10 cycles-thickness ZnOx, has the lowest contact resistivity (ρc) of 0.857 mΩ cm2 and the high minority carrier lifetime (τeff) of 319.43 μs, indicating the simultaneous achievement of the excellent contact performance and surface passivation. It is verified that the spin-coating SiO2 layer can boost the surface passivation level while maintaining the low ρc due to the pinhole-like carrier transport mechanism in spin-coating SiO2. Finally, the champion efficiency of 22.11 % was achieved in the n-type c-Si solar cell with full-area rear ZnOx/SiO2/LiF/Al ES dopant-free contact. This represents the best performance for ZnOx-based dopant-free c-Si solar cells, displaying a bright prospect of this ES contact in the low-temperature and high-efficiency Si heterojunction and Si/Perovskite tandem solar cells.

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Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells 工程技术-材料科学:综合
CiteScore
12.60
自引率
11.60%
发文量
513
审稿时长
47 days
期刊介绍: Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.
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