Low-temperature ZnOx (ALD)/SiO2 (spin-coating) dopant-free electron-selective contact enabling 22.11%-efficiency Si solar cell

IF 6.3 2区材料科学 Q2 ENERGY & FUELS Solar Energy Materials and Solar Cells Pub Date : 2025-04-01 Epub Date: 2025-01-08 DOI:10.1016/j.solmat.2025.113403

Jiawang Qiu , Ying Zhang , Zhongguo Zhou , Xi Lin , Xiaomin Song , Sihua Zhong , Haipeng Yin , Xiulin Jiang , Junbing Zhang , Zi Ouyang , Wenzhong Shen , Zengguang Huang

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Abstract

In recent years, there has been a concerted effort to develop new electron-selective (ES) materials for crystalline silicon (c-Si) solar cells aimed at simplifying the processes and improving efficiencies. By combing the low-temperature spin-coating SiO₂ with the atomic layer deposition (ALD) ZnO_x, we in this work prepared the dopant-free ES contact of ALD-ZnO_x/Spin-coating SiO₂/LiF/Al and applied it to n-type c-Si solar cells as a full-area rear contact. It is found that the optimal ZnO_x/SiO₂/LiF/Al sample with the 10 cycles-thickness ZnO_x, has the lowest contact resistivity (ρ_c) of 0.857 mΩ cm² and the high minority carrier lifetime (τ_eff) of 319.43 μs, indicating the simultaneous achievement of the excellent contact performance and surface passivation. It is verified that the spin-coating SiO₂ layer can boost the surface passivation level while maintaining the low ρ_c due to the pinhole-like carrier transport mechanism in spin-coating SiO₂. Finally, the champion efficiency of 22.11 % was achieved in the n-type c-Si solar cell with full-area rear ZnO_x/SiO₂/LiF/Al ES dopant-free contact. This represents the best performance for ZnO_x-based dopant-free c-Si solar cells, displaying a bright prospect of this ES contact in the low-temperature and high-efficiency Si heterojunction and Si/Perovskite tandem solar cells.

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低温ZnOx (ALD)/SiO2（自旋涂层）无掺杂的电子选择接触实现22.11%效率的硅太阳能电池

近年来，人们一直致力于为晶体硅（c-Si）太阳能电池开发新的电子选择（ES）材料，旨在简化工艺和提高效率。本文将低温自旋涂层SiO2与原子层沉积（ALD） ZnOx相结合，制备了ALD-ZnOx/自旋涂层SiO2/LiF/Al的无掺杂ES触点，并将其作为全面积后触点应用于n型c-Si太阳能电池。结果表明，ZnOx/SiO2/LiF/Al样品的最佳接触电阻率ρc为0.857 mΩ cm2，少数载流子寿命τeff为319.43 μs，同时获得了良好的接触性能和表面钝化效果。结果表明，由于SiO2中存在针孔状载流子输运机制，自旋涂覆SiO2能在保持较低ρc的同时提高表面钝化水平。最后，在全面积无ZnOx/SiO2/LiF/Al ES掺杂接触的n型c-Si太阳能电池中，冠军效率达到22.11%。这代表了znox基无掺杂c-Si太阳能电池的最佳性能，显示了该ES接触在低温高效Si异质结和Si/钙钛矿串联太阳能电池中的广阔前景。

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来源期刊

Solar Energy Materials and Solar Cells 工程技术-材料科学：综合

CiteScore

12.60

自引率

11.60%

发文量

513

审稿时长

47 days

期刊介绍： Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.