De Broglie Wave’s Snell’s law, Fresnel equations, and Brewster’s angle

IF 3 Q2 PHYSICS, CONDENSED MATTER Micro and Nanostructures Pub Date : 2025-01-20 DOI:10.1016/j.micrna.2025.208075
Larz Piechocki, Wei Li
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Abstract

A systematic comparative study demonstrates that the reflection and refraction of de Broglie waves at a semiconductor heterojunction are analogous to those of electromagnetic waves. We present the quantum reflection rule, Snell’s law, and Fresnel equations. We define the concept of transition energy for the de Broglie wave. Without loss of generality, we use the AlAs/GaAs heterojunction as an example. At the transition energy, electrons pass through the heterojunction without refraction or bending yet retain reflectivity. When the electron’s energy exceeds the transition energy, Brewster’s angle exists, at which the incident de Broglie wave exhibits zero reflectance, similar to the transverse magnetic (TM) mode of electromagnetic waves. However, below the transition energy, no Brewster’s angle or zero reflectance is present, similar to the transverse electric (TE) mode of electromagnetic waves. This transition energy also marks the “refractive index” inversion boundary for total internal reflection.
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德布罗意波的斯涅耳定律,菲涅耳方程和布鲁斯特角
系统的比较研究表明,半导体异质结处德布罗意波的反射和折射与电磁波的反射和折射相似。我们提出了量子反射规则、斯涅耳定律和菲涅耳方程。我们定义了德布罗意波的跃迁能量的概念。在不丧失一般性的情况下,我们以AlAs/GaAs异质结为例。在跃迁能量处,电子通过异质结时不发生折射或弯曲,但仍保持反射率。当电子的能量超过跃迁能量时,存在布鲁斯特角,入射德布罗意波在此角表现为零反射率,类似电磁波的横磁(TM)模式。但在跃迁能量以下,不存在布鲁斯特角,也不存在零反射率,类似于电磁波的横电(TE)模式。这个跃迁能量也标志着全内反射的“折射率”反演边界。
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