High-temperature-stable RRAMs with well-defined thermal effect mechanisms enable by engineering of robust 2D <100>-oriented organic-inorganic hybrid perovskites

Abstract

The exploitation of organic-inorganic hybrid perovskites (OIHPs) as active layer materials for typical sandwich-structured resistive memories has attracted widespread interest due to the property of low power consumption and fast switching. However, the inherent thermal instability of perovskites limits the application of OIHPs-based resistive memories under extreme conditions, while the influence of thermal effects on their resistance change characteristics remains unclear. Herein, a novel 2D <100>-oriented high-temperature resistant OIHP [(BIZ-H)₂(PbBr₄)]_n (BIZ = benzimidazole) is prepared as an active layer material to fabricate FTO/[(BIZ-H)₂(PbBr₄)]_n/Ag resistive memory with excellent thermal reproducibility and stability up to 120 °C. The increase in temperature leads to a decrease in the PbBr₆ octahedral distortion in the crystal structure, an increase in hydrogen bonding between the (BIZ-H)⁺ cation and the (PbBr₄)_n^2n- layer, and a shortening of the spacing of the inorganic layers, which is found to result in the creation and predominance of thermally activated traps with increasing temperature. This work provides a new direction for the next generation of OIHPs-based resistive memories with high-temperature tolerance.