Goos-Hänchen shifts in transition metal dichalcogenides

Abstract

In this article, we theoretically investigate the Goos-Hänchen (GH) shifts in two-dimensional transition metal dichalcogenides. We calculate the optical conductivities of these materials within the Kubo formalism and then we proceed to obtain reflection Fresnel's coefficients via Maxwell equations. Using angular spectrum analysis, we obtain the analytical expressions for GH shifts. We find that the GH shift exhibits extreme values near Brewster's angles and away from the optical transitions in these materials. Further, we investigate the GH shifts by modulating the chemical potential in monolayer transition metal dichalcogenides (ML-TMDs). The GH shifts are clearly sensitive to the interband and intraband transitions. Intraband electronic transitions evoke pronounced enhancements in the GH shifts. Our predicted result may find applications in biosensors and nanophotonic devices and provide an alternative pathway for the investigations of intrinsic properties of the spin valley-coupled two-dimensional quantum materials.