Influence of implantation and annealing temperatures on the irradiation damage in He2+ ion implanted 6H-SiC

IF 1.4 3区物理与天体物理 Q3 INSTRUMENTS & INSTRUMENTATION Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms Pub Date : 2025-01-13 DOI:10.1016/j.nimb.2025.165611

Hang Zang, Heng Yu, Tao Wang, Fang Liu, Chuanhao Chen, Pingan Zhou, Tan Shi, Huan He, Wenbo Liu, Chaohui He

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Abstract

Single crystal 6H-SiC samples were implanted with He²⁺ ions to 5 × 10¹⁶ cm⁻² at 400 °C and 750 °C, and the sample implanted at 400 °C was subsequently annealed at 750 °C for 3 h in vacuum. These samples were characterized using X-ray diffraction, Raman spectroscopy, UV–Visible spectrophotometry and transmission electron microscopy. The results showed that the lattice expansion, level of disorder and defect concentrations in the He-implanted 6H-SiC has decreased with increasing implantation temperature at the same dose. There was a reduced irradiation effect in the 6H-SiC irradiated at 400 °C and subsequently annealed at 750 °C compared to the sample solely irradiated at 750 °C to the same dose. This behavior was attributed to more stable defect clusters and enhanced He trapping at defects in the latter sample. Possible He bubble effects cannot be excluded. In addition, the temperature effect on defect recovery in the dynamic annealing during irradiation and post-irradiation annealing was discussed.

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注入和退火温度对注入6H-SiC中He2+离子辐照损伤的影响

单晶6H-SiC样品分别在400℃和750℃下注入He2+离子至5 × 1016 cm−2，然后在750℃真空退火3 h。采用x射线衍射、拉曼光谱、紫外可见分光光度法和透射电镜对样品进行了表征。结果表明，在相同剂量下，随着注入温度的升高，氦注入6H-SiC的晶格扩展、无序程度和缺陷浓度均有所降低。6H-SiC在400℃下辐照后在750℃下退火，与在750℃下单独辐照相同剂量的样品相比，辐照效应有所减弱。这种行为归因于后一种样品中更稳定的缺陷簇和增强的缺陷He捕获。不能排除可能的He气泡效应。此外，还讨论了辐照和辐照后动态退火过程中温度对缺陷恢复的影响。

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来源期刊

Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms 物理-核科学技术

CiteScore

2.80

自引率

7.70%

发文量

231

审稿时长

1.9 months

期刊介绍： Section B of Nuclear Instruments and Methods in Physics Research covers all aspects of the interaction of energetic beams with atoms, molecules and aggregate forms of matter. This includes ion beam analysis and ion beam modification of materials as well as basic data of importance for these studies. Topics of general interest include: atomic collisions in solids, particle channelling, all aspects of collision cascades, the modification of materials by energetic beams, ion implantation, irradiation - induced changes in materials, the physics and chemistry of beam interactions and the analysis of materials by all forms of energetic radiation. Modification by ion, laser and electron beams for the study of electronic materials, metals, ceramics, insulators, polymers and other important and new materials systems are included. Related studies, such as the application of ion beam analysis to biological, archaeological and geological samples as well as applications to solve problems in planetary science are also welcome. Energetic beams of interest include atomic and molecular ions, neutrons, positrons and muons, plasmas directed at surfaces, electron and photon beams, including laser treated surfaces and studies of solids by photon radiation from rotating anodes, synchrotrons, etc. In addition, the interaction between various forms of radiation and radiation-induced deposition processes are relevant.