Luminescence characterisation of composite quantum confinement structures of In0.29Ga0.71As well-cluster composite

IF 2.9 3区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Photonics and Nanostructures-Fundamentals and Applications Pub Date : 2025-02-01 Epub Date: 2025-01-16 DOI:10.1016/j.photonics.2025.101354

Zhensheng Wang , Yan Li , Haizhu Wang , Dengkui Wang , Jiao Wang , Minghui Lv , Lulu Gan , Shucun Zhao

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Abstract

In this paper, the InGaAs/GaAsP multiple quantum wells (MQWs) were successfully fabricated using metal-organic chemical vapor deposition (MOCVD) equipment, exhibiting the characteristics of a well-cluster composite (WCC) quantum structure. X-ray diffraction (XRD) tests indicated that the crystalline quality of the MQWs was high. Furthermore, photoluminescence (PL) tests revealed that the highly strained InGaAs/GaAsP quantum well structures could emit lasers simultaneously in the 950 nm and 1030 nm bands. This observation demonstrated that the double peaks observed in the quantum well photoluminescence were associated with indium-rich clusters (IRCs) generated by In-atom polarization, highlighting significant advantages for the development of new dual-wavelength lasers. This finding holds considerable importance for the advancement of novel monolithic quantum confined lasers that provide outputs in dual-wavelength and dual-polarization formats.

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In0.29Ga0.71As阱簇复合材料量子约束结构的发光特性

本文利用金属有机化学气相沉积（MOCVD）设备成功制备了InGaAs/GaAsP多量子阱（mqw），表现出井簇复合（WCC）量子结构的特征。x射线衍射（XRD）测试表明，所制备的MQWs晶体质量较高。此外，光致发光（PL）测试表明，高应变InGaAs/GaAsP量子阱结构可以在950 nm和1030 nm波段同时发射激光。结果表明，量子阱光致发光的双峰与原子内极化产生的富铟团簇（IRCs）有关，为新型双波长激光器的开发提供了重要的优势。这一发现对于提供双波长和双偏振格式输出的新型单片量子限制激光器的发展具有相当重要的意义。

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来源期刊

Photonics and Nanostructures-Fundamentals and Applications 工程技术-材料科学：综合

CiteScore

5.00

自引率

3.70%

发文量

审稿时长

62 days

期刊介绍： This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.