Nano/microstructures and thermoelectric properties of silicon germanium manufactured using laser powder bed fusion

IF 7.5 2区 材料科学 Q1 ENGINEERING, INDUSTRIAL Journal of Materials Processing Technology Pub Date : 2025-03-01 Epub Date: 2025-01-30 DOI:10.1016/j.jmatprotec.2025.118749
Ryan Welch, Sumner Gubisch, Saniya LeBlanc
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Abstract

Silicon germanium alloys are high-temperature thermoelectric materials that convert heat to electricity at ∼1000 °C. Yet, the current application of silicon germanium-based thermoelectric devices is limited to niche areas due to unwieldy manufacturing processes that limit the shape of thermoelectric materials to simple cuboids and thus limit power generation potential. Laser powder bed fusion of thermoelectric materials offers the potential to fabricate freeform shapes and induce nano- and microstructures favorable for thermoelectric energy conversion. Here, we successfully fabricated undoped Si50Ge50 and Si80Ge20 parts using laser powder bed fusion and investigated the resulting structure and properties. The undoped Si80Ge20 alloy had a maximum thermoelectric figure of merit, ZT, of 0.06 at 400 °C. The laser manufactured parts exhibited p-type behavior with a measured Seebeck coefficient that changed based on the stoichiometry. Si50Ge50 reached a Seebeck coefficient of 588 µV/K at 50 °C while Si80Ge20 reached 513 µV/K at 400 °C. Oxidation during processing contributed to balling and lack-of fusion defects and was alleviated in single melt lines by washing the powder in hydrofluoric acid prior to laser processing. Processing related defects remained in bulk samples fabricated with acid treated powder, suggesting that the processing atmosphere is a primary cause of processing-induced defects. This work advances the processing of silicon germanium alloys for thermoelectric devices by uncovering the structures and thermoelectric properties of silicon germanium processed via laser-based additive manufacturing.
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激光粉末床熔合制备硅锗的纳米/微结构和热电性能
硅锗合金是高温热电材料,可以在~ 1000°C的温度下将热量转化为电能。然而,目前基于硅锗的热电器件的应用仅限于小众领域,因为笨拙的制造工艺将热电材料的形状限制为简单的长方体,从而限制了发电潜力。热电材料的激光粉末床融合提供了制造自由形状和诱导有利于热电能量转换的纳米和微观结构的潜力。本文采用激光粉末床熔接技术成功制备了未掺杂的Si50Ge50和Si80Ge20零件,并对其结构和性能进行了研究。未掺杂的Si80Ge20合金在400℃时的最大热电性能ZT为0.06。激光制造的零件表现出p型行为,其测量的塞贝克系数根据化学计量而变化。Si50Ge50在50°C时的塞贝克系数为588µV/K, Si80Ge20在400°C时的塞贝克系数为513µV/K。加工过程中的氧化导致了球化和熔合缺陷的缺乏,在激光加工前用氢氟酸清洗粉末可以缓解单熔体线。在酸处理粉末制备的散装样品中,加工相关缺陷仍然存在,这表明加工气氛是加工诱导缺陷的主要原因。本研究通过揭示基于激光增材制造的硅锗合金的结构和热电性能,推进了热电器件用硅锗合金的加工。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Materials Processing Technology
Journal of Materials Processing Technology 工程技术-材料科学:综合
CiteScore
12.60
自引率
4.80%
发文量
403
审稿时长
29 days
期刊介绍: The Journal of Materials Processing Technology covers the processing techniques used in manufacturing components from metals and other materials. The journal aims to publish full research papers of original, significant and rigorous work and so to contribute to increased production efficiency and improved component performance. Areas of interest to the journal include: • Casting, forming and machining • Additive processing and joining technologies • The evolution of material properties under the specific conditions met in manufacturing processes • Surface engineering when it relates specifically to a manufacturing process • Design and behavior of equipment and tools.
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