Temperature-dependent luminescence of europium-doped Ga₂O₃ ceramics

Q2 Engineering Optical Materials: X Pub Date : 2025-02-01 DOI:10.1016/j.omx.2024.100392

Kuat K. Kumarbekov , Askhat B. Kakimov , Zhakyp T. Karipbayev , Murat T. Kassymzhanov , Mikhail G. Brik , Chong-geng Ma , Michał Piasecki , Yana Suchikova , Meldra Kemere , Marina Konuhova

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Abstract

This study explores the synthesis and luminescent properties of europium-doped gallium oxide (Ga₂O₃:Eu) ceramics fabricated via electron beam-assisted synthesis (EBAS) at 1.4 MeV. The resulting Ga₂O₃:Eu ceramics exhibit a nanocrystalline structure with an average crystallite size of ∼30 nm, high crystallinity, and minimal lattice strain (<0.5 %). Luminescence analysis from 4 K to 300 K reveals both intrinsic and europium-induced emissions. While intrinsic Ga₂O₃ emission exhibits thermal quenching above 100 K, Eu³⁺-related emissions, notably the 611 nm red emission, show thermal stability, retaining ∼90 % of their intensity at 300 K. Additionally, a novel low-temperature emission peak at 1.74 eV, potentially associated with electron beam-induced defects, was detected, meriting further exploration. These findings indicate that Ga₂O₃:Eu ceramics synthesized via EBAS hold promise for optoelectronic, radiation detection, and high-temperature applications, given their rapid production and enhanced thermal stability.

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