Modification of optical and photoelectrical properties of thin gallium oxide films by intense pulsed 200 keV C+ ion beams

Q2 Engineering Optical Materials: X Pub Date : 2025-02-01 DOI:10.1016/j.omx.2025.100399

Zhanymgul Koishybayeva , Fedor Konusov , Sergey Pavlov , Dmitrii Sidelev , Artur Nassyrbayev , Ruslan Gadyrov , Vladislav Tarbokov , Elena Polisadova , Abdirash Akilbekov

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Abstract

In this work the effect of an intense pulsed ion irradiation with a high flux ∼10²⁰ cm⁻²s⁻¹ on structure, optical and photo-electrical properties of gallium oxide thin films have been investigated. The films were produced by the radio-frequency magnetron sputtering method and had amorphous structure. A part of deposited films was annealed in the air environment (900 °C, 1 h) for synthesis of β-Ga₂O₃ phase. Obtained films were subjected to the intense pulsed ion irradiation (ion energy - up to 200 keV, pulse duration - 100 ns, current density on the target - up to 30 A/cm², number of pulses - 3). The influence of irradiation on optical absorption and photoluminescence spectra, field and temperature dependencies of dark and photoconductivity were investigated. The probable nature of growth defects is discussed, and a scheme of electronic transitions that determine optical properties is proposed.

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