Bipolar Random Signal Generation With Electrical Operation Based on Two Magnetic Tunnel Junctions

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-11 DOI:10.1109/LED.2024.3515147
Jiajia Jian;Xihui Yuan;Zheng Chai;Xue Zhou;Yongjie Luo;Yingtong He;Xin Yue;Jian Fu Zhang;Weidong Zhang;Tai Min
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Abstract

The generation of high quality bipolar random signal for unconventional computing and artificial neural networks remains challenging. In this study, we proposed a new method to generate bipolar random signals using two industrial-viable magnetic tunnel junctions (MTJs) operated solely by electrical operations compatible to the conventional memory program/read circuits. The bipolar random signals demonstrate excellent randomness and this method shows satisfying controllability over the average dwell times (ADTs), with good adjustability in bit generation speed and power consumption. This study provides a new practical hardware solution to the generation of high-quality random signals in the post-Moore era.
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基于两个磁隧道结的双极随机信号生成与电气操作
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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