Bipolar Random Signal Generation With Electrical Operation Based on Two Magnetic Tunnel Junctions

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-11 DOI:10.1109/LED.2024.3515147
Jiajia Jian;Xihui Yuan;Zheng Chai;Xue Zhou;Yongjie Luo;Yingtong He;Xin Yue;Jian Fu Zhang;Weidong Zhang;Tai Min
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Abstract

The generation of high quality bipolar random signal for unconventional computing and artificial neural networks remains challenging. In this study, we proposed a new method to generate bipolar random signals using two industrial-viable magnetic tunnel junctions (MTJs) operated solely by electrical operations compatible to the conventional memory program/read circuits. The bipolar random signals demonstrate excellent randomness and this method shows satisfying controllability over the average dwell times (ADTs), with good adjustability in bit generation speed and power consumption. This study provides a new practical hardware solution to the generation of high-quality random signals in the post-Moore era.
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基于两个磁隧道结的双极随机信号生成与电气操作
为非常规计算和人工神经网络生成高质量双极随机信号仍然具有挑战性。在这项研究中,我们提出了一种新的方法来产生双极随机信号,使用两个工业上可行的磁隧道结(MTJs),仅由与传统存储程序/读取电路兼容的电气操作操作。双极随机信号具有良好的随机性,该方法在平均停留时间(ADTs)内具有良好的可控性,在比特生成速度和功耗方面具有良好的可调性。该研究为后摩尔时代高质量随机信号的生成提供了一种新的实用硬件解决方案。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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