Demonstration of β-Ga2O3-Based Thermal Neutron Detector

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-25 DOI:10.1109/LED.2024.3522482
Xiangdong Meng;Xinyi Pei;Yuncheng Han;Na Sun;Zhaoxuan Fang;Lei Ren;Rui Zhang;Lianxin Zhang;Fang-Fang Ren;Song Feng;Dan Xiao;Size Chen;Taosheng Li;Shulin Gu;Rong Zhang;Jiandong Ye
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Abstract

Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O $_{{3}}\text {)}$ and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm $^{{2}}\text {)}$ p-NiO/ $\beta $ -Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of $10^{-{8}}$ A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of $\beta $ -Ga2O3 for applications in advanced radiation monitoring.
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β- ga2o3基热中子探测器的演示
紧凑,准确,耐用的热中子探测器利用超宽带隙半导体,如氧化镓(Ga2O)和钻石,为恶劣环境下核反应堆的安全和长期近堆监测带来了巨大的希望。然而,实现低泄漏和高效的中子探测仍然是一个重大挑战。在这项工作中,我们展示了第一个基于大面积(9 mm $^{{2}}\text {)}$ p-NiO/ $\beta $ -Ga2O3异质结二极管的热中子探测器。该器件得益于低界面阱密度,电容频率色散较小,噪声等效功率低1/f,漏电流为10^{-{8}}$ a(−200 V),因此,该器件具有高效的α粒子电荷收集效率(5.486 MeV),能量分辨率为10%。通过对10B薄膜进行中子转换积分,本征中子探测效率为0.82%,接近蒙特卡罗方法的预测值,对应于热中子探测效率为2.22%。这些发现强调了$\beta $ -Ga2O3在高级辐射监测中的应用潜力。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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