{"title":"Demonstration of β-Ga2O3-Based Thermal Neutron Detector","authors":"Xiangdong Meng;Xinyi Pei;Yuncheng Han;Na Sun;Zhaoxuan Fang;Lei Ren;Rui Zhang;Lianxin Zhang;Fang-Fang Ren;Song Feng;Dan Xiao;Size Chen;Taosheng Li;Shulin Gu;Rong Zhang;Jiandong Ye","doi":"10.1109/LED.2024.3522482","DOIUrl":null,"url":null,"abstract":"Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O<inline-formula> <tex-math>$_{{3}}\\text {)}$ </tex-math></inline-formula> and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm<inline-formula> <tex-math>$^{{2}}\\text {)}$ </tex-math></inline-formula> p-NiO/<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of <inline-formula> <tex-math>$10^{-{8}}$ </tex-math></inline-formula> A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of <inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 for applications in advanced radiation monitoring.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"187-190"},"PeriodicalIF":4.1000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10816066/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O$_{{3}}\text {)}$ and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm$^{{2}}\text {)}$ p-NiO/$\beta $ -Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of $10^{-{8}}$ A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of $\beta $ -Ga2O3 for applications in advanced radiation monitoring.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.