Demonstration of β-Ga2O3-Based Thermal Neutron Detector

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-25 DOI:10.1109/LED.2024.3522482
Xiangdong Meng;Xinyi Pei;Yuncheng Han;Na Sun;Zhaoxuan Fang;Lei Ren;Rui Zhang;Lianxin Zhang;Fang-Fang Ren;Song Feng;Dan Xiao;Size Chen;Taosheng Li;Shulin Gu;Rong Zhang;Jiandong Ye
{"title":"Demonstration of β-Ga2O3-Based Thermal Neutron Detector","authors":"Xiangdong Meng;Xinyi Pei;Yuncheng Han;Na Sun;Zhaoxuan Fang;Lei Ren;Rui Zhang;Lianxin Zhang;Fang-Fang Ren;Song Feng;Dan Xiao;Size Chen;Taosheng Li;Shulin Gu;Rong Zhang;Jiandong Ye","doi":"10.1109/LED.2024.3522482","DOIUrl":null,"url":null,"abstract":"Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O<inline-formula> <tex-math>$_{{3}}\\text {)}$ </tex-math></inline-formula> and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm<inline-formula> <tex-math>$^{{2}}\\text {)}$ </tex-math></inline-formula> p-NiO/<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of <inline-formula> <tex-math>$10^{-{8}}$ </tex-math></inline-formula> A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of <inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>-Ga2O3 for applications in advanced radiation monitoring.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"46 2","pages":"187-190"},"PeriodicalIF":4.1000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10816066/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Compact, accurate, and durable thermal neutron detectors utilizing ultra-wide bandgap semiconductors, such as gallium oxide (Ga2O $_{{3}}\text {)}$ and diamond, hold great promise for the safe and long-term near-core monitoring of nuclear reactors in harsh environments. However, achieving low device leakage and efficient neutron detection remains a significant challenge. In this work, we demonstrate the first thermal neutron detector based on a large-area (9 mm $^{{2}}\text {)}$ p-NiO/ $\beta $ -Ga2O3 heterojunction diode. The device benefits from a low interfacial trap density, as demonstrated by the slight capacitance-frequency dispersion and low 1/f noise-equivalent power, resulting in an ultralow leakage current of $10^{-{8}}$ A (at −200 V). Consequently, it exhibits efficient charge collection efficiency for alpha particles (5.486 MeV) with an energy resolution of 10%. By integrating 10B film for neutron conversion, we achieved an intrinsic neutron detection efficiency of 0.82%, which approaches the predicted value from the Monte Carlo method, corresponding to 2.22% for thermal neutrons. These findings underscore the potential of $\beta $ -Ga2O3 for applications in advanced radiation monitoring.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover Corrections to “A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature” Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications IEEE Transactions on Electron Devices Table of Contents
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1