Theoretical Design of 2D Pca21 SiNOX (X=H, F, and Cl) Phases: A New Family of Flexible Wide Bandgap Semiconductors

IF 5.8 3区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Nanoscale Pub Date : 2025-02-06 DOI:10.1039/d4nr04789c
Heng Zhang, Jiahao Yu, Sylvain Pitie, Frédéric Guégan, Gilles Frapper, Junjie Wang
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Abstract

By first-principles calculations, a new family of two-dimensional (2D) Pca21 SiNOX (X=H, F, and Cl) phases were rationally designed by theoretical exfoliation of bulk layered α-LiSiON compounds, taking advantage of the in- and out-of-plane bonding anisotropy of the bulk parental compound. It is found that 2D Pca21 SiNOX phases have wide direct and quasi-direct bandgaps of 4.99~6.33 eV by the HSE06 functional with good thermodynamic, mechanical, dynamic, and thermal stabilities. In addition, the flexibility of 2D Pca21 SiNOX structures were evidenced with moderate in-plane Young's moduli of 133.27~141.87 N/m, ideal strength of 6.06~6.56 N/m, and out-of-plane bending strength of 1.41~1.57 eV. What is more, the stronger anharmonicity of 2D Pca21 SiNOH leads to lower lattice thermal conductivities, in comparison with 2D Pca21 SiNOF and SiNOCl. Finally, isovalent elemental substitutions are adopted to tune the bandgaps of 2D Pca21 SiNOX phases within the range of 0.54~6.64 eV by the HSE06 functional and ten wide bandgap semiconductors (2D Pca21 CNOH, GeNOH, CNOF, GeNOF, CNOCl, SiNOCl, GeNOCl, SiPOCl, SiNSH, and SiNSeH) were unveiled with bandgaps larger than 3.5 eV. Our findings enrich the family of 2D wide bandgap semiconductors, but also highlight the promising multi-functional electronic applications of 2D Pca21 SiNOX phases.
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通过第一性原理计算,利用块体母体化合物的面内和面外成键各向异性,对块体层状α-LiSiON化合物进行理论剥离,合理地设计了一系列新的二维(2D)Pca21 SiNOX(X=H、F和Cl)相。通过 HSE06 函数研究发现,二维 Pca21 SiNOX 相具有 4.99~6.33 eV 的宽直接和准直接带隙,并具有良好的热力学、机械、动态和热稳定性。此外,二维 Pca21 SiNOX 结构的柔韧性也得到了证明,其平面内杨氏模量为 133.27~141.87 N/m,理想强度为 6.06~6.56 N/m,平面外弯曲强度为 1.41~1.57 eV。此外,与二维 Pca21 SiNOF 和 SiNOCl 相比,二维 Pca21 SiNOH 更强的非谐波性导致了更低的晶格热导率。最后,利用 HSE06 函数在 0.54~6.64 eV 范围内调节二维 Pca21 SiNOX 相的带隙,并揭示了十种带隙大于 3.5 eV 的宽带隙半导体(二维 Pca21 CNOH、GeNOH、CNOF、GeNOF、CNOCl、SiNOCl、GeNOCl、SiPOCl、SiNSH 和 SiNSeH)。我们的发现不仅丰富了二维宽带隙半导体家族,还凸显了二维 Pca21 SiNOX 相的多功能电子应用前景。
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来源期刊
Nanoscale
Nanoscale CHEMISTRY, MULTIDISCIPLINARY-NANOSCIENCE & NANOTECHNOLOGY
CiteScore
12.10
自引率
3.00%
发文量
1628
审稿时长
1.6 months
期刊介绍: Nanoscale is a high-impact international journal, publishing high-quality research across nanoscience and nanotechnology. Nanoscale publishes a full mix of research articles on experimental and theoretical work, including reviews, communications, and full papers.Highly interdisciplinary, this journal appeals to scientists, researchers and professionals interested in nanoscience and nanotechnology, quantum materials and quantum technology, including the areas of physics, chemistry, biology, medicine, materials, energy/environment, information technology, detection science, healthcare and drug discovery, and electronics.
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