Electronic parameters impact on near-infrared optical properties in transparent conducting oxides

Abstract

The demand for transparent conducting oxides (TCOs) with enhanced near-infrared (NIR) transparency has intensified, driven by advancements in optoelectronics that require materials balancing optical clarity and conductivity across broader spectra. While substantial research has elucidated the foundational properties of TCOs, the impact of electronic characteristics particularly carrier mobility and concentration on NIR performance remains underexplored. This study employs a numerical approach to systematically analyze how electronic parameters govern TCOs optical properties, with a focus on NIR transparency. Findings indicate that increasing carrier mobility extends NIR transparency by shifting the transmittance cutoff, while variations in concentration and material thickness profoundly affect reflectance and absorbance within the NIR spectrum. For optimal NIR transparency, the study suggests a carrier concentration of approximately 2 × 10²⁰ cm⁻³, film thickness of 200 nm, and enhanced carrier mobility exceeding 100 cm²/V s. The result underscore the potential of electronic tuning to refine TCO properties, offering valuable guidance for developing TCOs with enhanced performance across both visible and NIR ranges, tailored for next-generation optoelectronic applications.