All-Optical Controlled Bidirectional Synaptic Transistors for Motion Perception

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-23 DOI:10.1109/LED.2024.3521039
Xiaotao Jing;Rui Wang;Dingwei Li;Wanlin Zhang;Tonglong Zeng;Qi Huang;Xiaohua Ma;Bowen Zhu;Hong Wang;Yue Hao
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引用次数: 0

Abstract

Bidirectional photoresponsive synaptic devices offer distinct advantages and significant potential for applications in artificial visual systems. However, most existing artificial optical synapses require both optical stimulation and separate electrical control to achieve bidirectional synaptic conductance modulation, thereby increasing processing time and system complexity. In this study, we developed a bidirectional photoresponsive synaptic transistor based on a heterostructure of indium oxide (In2O3) and organic semiconductor, which exhibits positive response to ultraviolet (UV) light and negative response to red-light illumination. Leveraging their reversible conductance tunability, we simulated artificial neural networks for handwritten digit recognition, achieving an accuracy of 94.7%. Furthermore, the synaptic transistors can be utilized for precise motion perception, achieving 100% prediction accuracy.
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover Corrections to “A Tunneling Light-Emitting Device With Ultra-Narrow Linewidth Emission at Room-Temperature” Exploration of the exciting world of multifunctional oxide-based electronic devices: from material to system-level applications IEEE Transactions on Electron Devices Table of Contents
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