Tunable Surface Acoustic Wave Resonator Based on Magneto-Acoustic Waveguide

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-24 DOI:10.1109/LED.2024.3522150
Chenye Zhang;Shiyan Ma;Yang Yang;Kailin Li;Xianfeng Liang;Haifeng Gao;Jinghong Guo;Tianling Ren;Tianxiang Nan
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Abstract

Magnetic field tunable surface acoustic wave (SAW) devices are promising candidates for frequency tunable applications such as tunable acoustic filters, magnetic field sensors, and quantum acoustic devices. However, achieving practical levels of tunability remains a significant challenge. We enhance the tunability by introducing a magneto-acoustic waveguide design that concentrates acoustic energy within a magnetostrictive layer with low acoustic velocity, thereby amplifying the delta-E effect and enhancing its impact on SAW propagation. Using a 128°Y-X cut LiNbO3/SiO2/Fe $_{{70}.{4}}$ Ga $_{{17}.{6}}$ B12 (FeGaB) structure, we demonstrate that the tunability correlates with the thickness of FeGaB, consistent with our simulation results. The device with a 670 nm thick FeGaB magneto-acoustic waveguide achieves a maximum frequency shift of 5.134 MHz, corresponding to a tunability of 1.23%. These results underscore the efficacy of the magneto-acoustic waveguide approach in significantly enhancing the tunability of magnetic SAW devices, offering a viable path toward more practical tunable microwave components.
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基于磁声波导的可调谐表面声波谐振器
磁场可调谐表面声波(SAW)器件是频率可调谐应用的有前途的候选者,如可调谐声滤波器、磁场传感器和量子声学器件。然而,实现实际水平的可调性仍然是一个重大挑战。我们通过引入磁声波导设计来增强可调性,该设计将声能集中在低声速的磁致伸缩层内,从而放大delta-E效应并增强其对声表面波传播的影响。采用128°Y-X切割LiNbO3/SiO2/Fe $_{{70}。{4}}$ Ga ${{17}。{6}}$ B12 (FeGaB)结构,我们证明了可调性与FeGaB的厚度相关,与我们的仿真结果一致。该器件采用670 nm厚的FeGaB磁声波导,最大频移为5.134 MHz,对应的可调性为1.23%。这些结果强调了磁声波导方法在显著提高磁性SAW器件可调谐性方面的有效性,为开发更实用的可调谐微波元件提供了一条可行的途径。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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