Low-Cost and Low-Voltage Si/SiGe Phototransistor With High Responsivity at 900nm for Microwave Photonics Applications

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-23 DOI:10.1109/LED.2024.3521117

V. Thary;C. Algani;P. Chevalier;J.-L. Polleux

引用次数: 0

Abstract

This letter presents performances of Si/SiGe heterojunction bipolar phototransistors (HPT) used for microwave photonics communication receiver link around 850nm. SiGe phototransistors are designed in an industrial 55-nm SiGe BiCMOS from STMicroelectronics without any change in the layers technology process. Different horizontal geometries of HPTs and biasing techniques were evaluated. The static responsivity of a

$20\times 20~ {\mu }$

m2 optical window HPT reached 20.7 A/W at 900nm. This is the highest static responsivities reported for a fully-integrated Si/SiGe HPT with vertical illumination. A 1.6-GHz bandwidth for a 10.5-A/W static responsivity was achieved for a

$5\times 5 {\mu }$

m2 optical window HPT using current bias.

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这封信介绍了用于 850 纳米左右微波光子通信接收器链路的硅/硅锗异质结双极光电晶体管（HPT）的性能。硅/锗异质结双极光电晶体管采用意法半导体公司生产的 55 纳米硅锗 BiCMOS 工业级设计，各层技术工艺未作任何改变。对 HPT 的不同水平几何形状和偏压技术进行了评估。在 900nm 波长下，20/times 20~ {\mu }$ m2 光学窗口 HPT 的静态响应率达到了 20.7 A/W。这是报道的垂直照明全集成硅/硅锗 HPT 的最高静态响应率。使用电流偏压，5{\mu }$ m2 光学窗口 HPT 实现了 1.6-GHz 带宽，静态响应率为 10.5A/W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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