Quadruple Folded Groove-Guide Slow Wave Structure With Power Synthesis Circuit for Terahertz TWT

IF 4.5 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-12-11 DOI:10.1109/LED.2024.3515646
Jingrui Duan;Zhigang Lu;Peng Gao;Zechuan Wang;Jingyu Guo;Yang Dong;Yuan Zheng;Zhanliang Wang;Shaomeng Wang;Huarong Gong;Yubin Gong
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Abstract

In this letter, a novel power synthesis scheme is proposed for high-power terahertz (THz) traveling-wave tube (TWT), which features a quadruple folded groove-guide (Q-FGG) slow wave structure (SWS) and a power synthesis circuit. Numerical simulations validate the high-frequency characteristics of Q-FGG-SWS. Particle-In-Cell (PIC) simulations predict that, driven by four 125mA electron beams at 28.4kV, the Q-FGG-TWT is expected to achieve possibility of output power of approximately 177.3W at 316GHz. The Q-FGG-SWSs were fabricated using high-precision computer numerical control (CNC) milling technology. The dispersion characteristics of Q-FGG-SWS and transmission characteristics of the Q-FGG-SWSs based on the compact multi-stage groove-T coupler were experimentally verified. Therefore, the Q-FGG-SWS with a compact power synthesis circuit offers a promising approach for enhancing the power output of THz-TWTs.
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四叠槽导慢波结构与太赫兹行波管功率合成电路
本文提出了一种大功率太赫兹行波管(TWT)的新型功率合成方案,该方案具有四重折叠槽波导(Q-FGG)慢波结构(SWS)和功率合成电路。数值模拟验证了Q-FGG-SWS的高频特性。粒子池(PIC)模拟预测,在4个28.4kV的125mA电子束的驱动下,q - fg - twt在316GHz下有望实现约177.3W的输出功率。采用高精度数控铣削技术制备了q - fg - swss。实验验证了Q-FGG-SWSs的色散特性和基于紧凑型多级凹槽- t耦合器的Q-FGG-SWSs的传输特性。因此,具有紧凑功率合成电路的q - fg - sws为提高太赫兹行波管的功率输出提供了一种有前途的方法。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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