Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p+-Si Schottky Photovoltaic Device

IF 3.3 3区材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-12-05 DOI:10.1007/s12633-024-03204-4

Jonmani Rabha, Mintu Das, Saponjeet Borah, Deepali Sarkar

{"title":"Effect of Annealing on the Pyro-Phototronic Behaviour in Al/nanostructured PS-ML: p+-Si Schottky Photovoltaic Device","authors":"Jonmani Rabha, Mintu Das, Saponjeet Borah, Deepali Sarkar","doi":"10.1007/s12633-024-03204-4","DOIUrl":null,"url":null,"abstract":"<div>In the present study, effect of annealing in Al/nanostructured porous silicon multilayer (PS-ML): p+-Si Schottky photovoltaic device is observed for the behavioural change in its pyro-phototronic and corresponding photovoltaic effect. Under UV (365 nm) illumination condition, the as-prepared device shows maximum enhancement and increment factor of 31.16% and 186% at \\(0.5V\\) compared to the devices annealed at temperatures \\(50^\\circ C\\) and \\(100^\\circ C\\) respectively. However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to \\(100^\\circ C\\). On further elevating the annealing temperature to \\(150^\\circ C\\), the pyro-phototronic effect diminishes while photovoltaic is still retained. The device treated at \\(150^\\circ C\\) shows enhancement in open circuit voltage (\\({V}_{oc}\\)) value of \\(\\pm 841 mV\\) with large value of fill factor (FF) of \\(27\\%\\) and power conversion efficiency (PCE) of \\(9.63\\%\\) and \\(6.36\\%\\) for upward and downward poling respectively. While on elevating the annealing temperature to \\(200^\\circ C\\), device performance degrades.</div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 2","pages":"361 - 375"},"PeriodicalIF":3.3000,"publicationDate":"2024-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03204-4","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}

引用次数: 0

Abstract

In the present study, effect of annealing in Al/nanostructured porous silicon multilayer (PS-ML): p⁺-Si Schottky photovoltaic device is observed for the behavioural change in its pyro-phototronic and corresponding photovoltaic effect. Under UV (365 nm) illumination condition, the as-prepared device shows maximum enhancement and increment factor of 31.16% and 186% at \(0.5V\) compared to the devices annealed at temperatures \(50^\circ C\) and \(100^\circ C\) respectively. However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to \(100^\circ C\). On further elevating the annealing temperature to \(150^\circ C\), the pyro-phototronic effect diminishes while photovoltaic is still retained. The device treated at \(150^\circ C\) shows enhancement in open circuit voltage (\({V}_{oc}\)) value of \(\pm 841 mV\) with large value of fill factor (FF) of \(27\%\) and power conversion efficiency (PCE) of \(9.63\%\) and \(6.36\%\) for upward and downward poling respectively. While on elevating the annealing temperature to \(200^\circ C\), device performance degrades.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

退火对铝/纳米结构 PS-ML：p+-硅肖特基光伏器件热释光行为的影响

在本研究中，观察了Al/纳米结构多孔硅多层（PS-ML）： p+-Si肖特基光伏器件的退火效应，观察了其热光电子行为的变化和相应的光伏效应。在紫外（365 nm）光照条件下，所制备的器件的最大增强和增量因子为31.16% and 186% at \(0.5V\) compared to the devices annealed at temperatures \(50^\circ C\) and \(100^\circ C\) respectively. However, the coupling between pyro-phototronic and photovoltaic effect remains effective only for the device annealed up to \(100^\circ C\). On further elevating the annealing temperature to \(150^\circ C\), the pyro-phototronic effect diminishes while photovoltaic is still retained. The device treated at \(150^\circ C\) shows enhancement in open circuit voltage (\({V}_{oc}\)) value of \(\pm 841 mV\) with large value of fill factor (FF) of \(27\%\) and power conversion efficiency (PCE) of \(9.63\%\) and \(6.36\%\) for upward and downward poling respectively. While on elevating the annealing temperature to \(200^\circ C\), device performance degrades.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.