Dyhia Tamsaout, Edmond Cambril, Laurent Travers, Ali Madouri, Noëlle Gogneau, Maria Tchernycheva, Jean-Christophe Harmand, Ludovic Largeau
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Abstract
Growth of GaN nanowires (NWs) on graphene substrates is carried out by plasma-assisted molecular beam epitaxy. We test a two-step growth procedure consisting of a first stage at relatively low temperature followed by a second stage at higher temperature. We investigate the impact of this process on the usually long incubation time which precedes the first GaN nucleation events on graphene. We also examine how the selectivity of growth between graphene and the surrounding SiO2surface is affected. After optimization of this procedure, it is applied to the growth of GaN NWs on a graphene layer patterned by electron beam lithography. A clear advantage of the two-step growth is observed in terms of reduction of the incubation time and improvement of height uniformity.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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